Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
9033 | 1127 | 22.1 | 73% |
Classes in level above (level 2) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
1376 | 7700 | GALLIUM ARSENIDE//SULFUR PASSIVATION//INDIUM ARSENIDE |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | SULFUR PASSIVATION | Author keyword | 22 | 55% | 2% | 27 |
2 | PHOSPHIDIZATION | Author keyword | 12 | 86% | 1% | 6 |
3 | PHOSPHINE PLASMA | Author keyword | 9 | 83% | 0% | 5 |
4 | NH42S X TREATMENT | Author keyword | 6 | 71% | 0% | 5 |
5 | ELEMENTAL ARSENIC | Author keyword | 4 | 75% | 0% | 3 |
6 | NH42SX TREATMENT | Author keyword | 4 | 75% | 0% | 3 |
7 | P2S5 | Author keyword | 3 | 60% | 0% | 3 |
8 | S2CL2 | Author keyword | 3 | 60% | 0% | 3 |
9 | SULFIDE TREATMENT | Author keyword | 3 | 60% | 0% | 3 |
10 | NH42S X | Author keyword | 3 | 35% | 1% | 6 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | SULFUR PASSIVATION | 22 | 55% | 2% | 27 | Search SULFUR+PASSIVATION | Search SULFUR+PASSIVATION |
2 | PHOSPHIDIZATION | 12 | 86% | 1% | 6 | Search PHOSPHIDIZATION | Search PHOSPHIDIZATION |
3 | PHOSPHINE PLASMA | 9 | 83% | 0% | 5 | Search PHOSPHINE+PLASMA | Search PHOSPHINE+PLASMA |
4 | NH42S X TREATMENT | 6 | 71% | 0% | 5 | Search NH42S+X+TREATMENT | Search NH42S+X+TREATMENT |
5 | ELEMENTAL ARSENIC | 4 | 75% | 0% | 3 | Search ELEMENTAL+ARSENIC | Search ELEMENTAL+ARSENIC |
6 | NH42SX TREATMENT | 4 | 75% | 0% | 3 | Search NH42SX+TREATMENT | Search NH42SX+TREATMENT |
7 | P2S5 | 3 | 60% | 0% | 3 | Search P2S5 | Search P2S5 |
8 | S2CL2 | 3 | 60% | 0% | 3 | Search S2CL2 | Search S2CL2 |
9 | SULFIDE TREATMENT | 3 | 60% | 0% | 3 | Search SULFIDE+TREATMENT | Search SULFIDE+TREATMENT |
10 | NH42S X | 3 | 35% | 1% | 6 | Search NH42S+X | Search NH42S+X |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | NH42SX TREATED GAAS | 69 | 93% | 2% | 26 |
2 | SULFUR PASSIVATION | 66 | 59% | 7% | 75 |
3 | HETEROSTRUCTURE BIPOLAR TRANSISTOR | 56 | 89% | 2% | 25 |
4 | GAAS SURFACES | 55 | 36% | 11% | 123 |
5 | NH42SX | 35 | 89% | 1% | 16 |
6 | BARE SEMICONDUCTOR SURFACES | 26 | 59% | 3% | 29 |
7 | GAAS SURFACE | 20 | 44% | 3% | 34 |
8 | SULFUR PASSIVATED INAS | 20 | 100% | 1% | 9 |
9 | RUNNING DEIONIZED WATER | 15 | 88% | 1% | 7 |
10 | ELECTROCHEMICAL SULFUR PASSIVATION | 12 | 86% | 1% | 6 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
Chalcogenide passivation of III-V semiconductor surfaces | 1998 | 81 | 171 | 87% |
Surface chemistry of prototypical bulk II-VI and III-V semiconductors and implications for chemical sensing | 2000 | 216 | 168 | 47% |
Molecular self-assembly at bare semiconductor surfaces: Investigation of the chemical and electronic properties of the alkanethiolate-GaAs(001) interface | 2007 | 44 | 77 | 65% |
Molecular self-assembly at bare semiconductor surfaces: Preparation and characterization of highly organized octadecanethiolate monolayers on GaAs(001) | 2006 | 90 | 85 | 36% |
Surface modification of III-V semiconductors: chemical processes and electronic properties | 2002 | 34 | 100 | 39% |
Molecular self-assembly at bare semiconductor surfaces: Characterization of a homologous series of n-alkanethiolate monolayers on GaAs(001) | 2007 | 52 | 91 | 23% |
Wet-Chemical Passivation of InAs: Toward Surfaces with High Stability and Low Toxicity | 2012 | 3 | 61 | 39% |
The Molecular Controlled Semiconductor Resistor: A Universal Sensory Technology | 2014 | 0 | 38 | 24% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | FG OBERFLACHENFOR | 2 | 67% | 0.2% | 2 |
2 | JOINT BIOMED ENGN NCSU UNC CH | 2 | 50% | 0.3% | 3 |
3 | QUANTUM SEMICOND PHOTON BASED BIONANOTECHNO | 2 | 31% | 0.4% | 5 |
4 | NANODEVICE PROC | 1 | 100% | 0.2% | 2 |
5 | NANOELECT COMP | 1 | 21% | 0.3% | 3 |
6 | ARMORED FORCES REP ENTAT BUR | 1 | 50% | 0.1% | 1 |
7 | CHANGCHUN REG OFF | 1 | 50% | 0.1% | 1 |
8 | ELECT 13 | 1 | 50% | 0.1% | 1 |
9 | GRP MICROELECT SHERBROOKE | 1 | 50% | 0.1% | 1 |
10 | MICRO NAOSCI | 1 | 50% | 0.1% | 1 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000212249 | GAAS MOSFET//INTERFACE CONTROL LAYER//III V MOSFET |
2 | 0.0000172958 | SEMICOND INTEGRATED CIRCUIT//SCI TECH FES SAIS//HIGFET |
3 | 0.0000172587 | ATOMIC HYDROGEN CLEANING//ECR HYDROGEN PLASMA//IN SITU VACUUM PROCESS |
4 | 0.0000124405 | ELECTRON COUNTING MODEL//SUR E STUDY//GA ADATOM |
5 | 0.0000117973 | WEBSTER//ADIABATIC BOND CHARGE MODEL//INAS110 |
6 | 0.0000105288 | EDUC SCANNING PROBE MICROSCOPY//LOBACHEVSKY PHYS TECH//PHOTOELECTRIC SPECTROSCOPY |
7 | 0.0000094487 | INDIUM PHOSPHIDE100//INTERACTION IONS MATTER//SIMULATION METHOD TRIM |
8 | 0.0000060808 | MESA STEP HEIGHT//LAVOISIER IREM//IMAGE ARRAY |
9 | 0.0000057685 | PHOTON RECYCLING//SEMICONDUCTOR SCINTILLATORS//FSF |
10 | 0.0000055319 | PHOTOREFLECTANCE//FIELD INDUCED CHANGE IN THE PSEUDODIELECTRIC FUNCTION//PHOTOELLIPSOMETRY |