Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
9004 | 1129 | 13.0 | 53% |
Classes in level above (level 2) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
740 | 11887 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B//MICROELECTRONIC ENGINEERING//JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | PHOTOMASK | Address | 17 | 100% | 1% | 8 |
2 | IC EQUIPMENT | Address | 12 | 75% | 1% | 9 |
3 | PROXIMITY EFFECT CORRECTION | Author keyword | 11 | 31% | 3% | 29 |
4 | EB MASK EQUIPMENT ENGN | Address | 9 | 83% | 0% | 5 |
5 | MASK DRAWING EQUIPMENT DEV | Address | 8 | 100% | 0% | 5 |
6 | REPRESENTATIVE FIGURE | Author keyword | 8 | 100% | 0% | 5 |
7 | ELECTRON BEAM DIRECT WRITING | Author keyword | 6 | 43% | 1% | 10 |
8 | OHI PLANT | Address | 4 | 67% | 0% | 4 |
9 | VERTICAL DEVELOPMENT | Author keyword | 4 | 75% | 0% | 3 |
10 | ELECTRON PROJECTION LITHOGRAPHY EPL | Author keyword | 4 | 46% | 1% | 6 |
Web of Science journal categories |
Author Key Words |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | PROXIMITY EFFECT CORRECTION | 33 | 53% | 4% | 43 |
2 | AREA DENSITY MAP | 24 | 91% | 1% | 10 |
3 | CELL PROJECTION LITHOGRAPHY | 19 | 80% | 1% | 12 |
4 | REPRESENTATIVE FIGURE METHOD | 13 | 69% | 1% | 11 |
5 | NIKON EB STEPPER | 6 | 53% | 1% | 8 |
6 | PATTERN SHAPE MODIFICATION | 6 | 100% | 0% | 4 |
7 | PROXECCO | 6 | 100% | 0% | 4 |
8 | STENCIL MASK | 5 | 54% | 1% | 7 |
9 | NEAREST NEIGHBOR APPROACH | 5 | 63% | 0% | 5 |
10 | RULE BASED APPROACH | 5 | 44% | 1% | 8 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references |
% act. ref. to same field |
---|---|---|---|---|
High resolution optical lithography or high throughput electron beam lithography: The technical struggle from the micro to the nano-fabrication evolution | 2015 | 2 | 34 | 38% |
Electron beam lithography - Present and future | 1996 | 10 | 7 | 86% |
Making lithography work for the 7-nm node and beyond in overlay accuracy, resolution, defect, and cost | 2015 | 0 | 2 | 100% |
PROXIMITY EFFECT CORRECTION AT 10 KEV USING GHOST AND SIZING FOR 0.4-MU-M MASK LITHOGRAPHY | 1990 | 5 | 5 | 100% |
MONTE-CARLO METHODS AND MICROLITHOGRAPHY SIMULATION FOR ELECTRON AND X-RAY-BEAMS | 1987 | 32 | 50 | 54% |
NANOSTRUCTURE TECHNOLOGY | 1988 | 48 | 82 | 22% |
NANOMETRIC-SCALE ELECTRON-BEAM LITHOGRAPHY | 1992 | 3 | 38 | 58% |
ELECTRON LITHOGRAPHY FOR THE FABRICATION OF MICROELECTRONIC DEVICES | 1985 | 14 | 34 | 47% |
PRACTICAL AND FUNDAMENTAL-ASPECTS OF LITHOGRAPHY | 1984 | 5 | 6 | 67% |
EXPOSURE AND DEVELOPMENT MODELS USED IN ELECTRON-BEAM LITHOGRAPHY | 1981 | 41 | 8 | 88% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | PHOTOMASK | 17 | 100% | 0.7% | 8 |
2 | IC EQUIPMENT | 12 | 75% | 0.8% | 9 |
3 | EB MASK EQUIPMENT ENGN | 9 | 83% | 0.4% | 5 |
4 | MASK DRAWING EQUIPMENT DEV | 8 | 100% | 0.4% | 5 |
5 | OHI PLANT | 4 | 67% | 0.4% | 4 |
6 | MASK DEV TEAM | 3 | 50% | 0.4% | 5 |
7 | ADV LITHOG | 3 | 60% | 0.3% | 3 |
8 | IC LCD EQUIPMENT BUSINESS HEADQUARTERS | 2 | 67% | 0.2% | 2 |
9 | LETI GRENOBLE | 2 | 50% | 0.3% | 3 |
10 | ELECT DEV | 1 | 19% | 0.6% | 7 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000263362 | MICROCOLUMN//SCHOTTKY EMITTER//PROD DESIGN TECHNOL |
2 | 0.0000246390 | NANOSYST MFG//NANOELECT PROC IL//ION PROJECTION |
3 | 0.0000148749 | NANOPYRAMID ARRAY//DOPANT ION IMPLANTATION//FIS SUPERFICIES INTER ES |
4 | 0.0000139799 | HYDROGEN SILSESQUIOXANE//HSQ//HSQ RESIST |
5 | 0.0000136837 | X RAY MASK//SUPER FINE SR LITHOG//X RAY LITHOGRAPHY |
6 | 0.0000118661 | JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY//LINE EDGE ROUGHNESS//CHEMICALLY AMPLIFIED RESISTS |
7 | 0.0000101076 | BILEVEL STRUCTURE//PLASMA BLANKING//WT ADDITIVITY |
8 | 0.0000093478 | CANONICAL ABERRATION THEORY//OPT PHYS ELECT ENGN//ACCURACY OF COMPUTATION |
9 | 0.0000072857 | SCANNING//SECONDARY EMISSION NOISE//INTEGRATED CIRCUIT ADV PROC TECHNOL |
10 | 0.0000057393 | OPTICAL LITHOGRAPHY//PHASE SHIFTING MASK//BOTTOM ANTIREFLECTIVE COATINGS |