Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
891 | 2896 | 21.4 | 82% |
Classes in level above (level 2) |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | GAINNAS | Author keyword | 137 | 58% | 5% | 158 |
2 | DILUTE NITRIDES | Author keyword | 94 | 63% | 3% | 94 |
3 | GANAS | Author keyword | 63 | 70% | 2% | 53 |
4 | GAASN | Author keyword | 57 | 63% | 2% | 57 |
5 | INGAASN | Author keyword | 40 | 53% | 2% | 53 |
6 | SOLID STATE PHOTON | Address | 34 | 33% | 3% | 84 |
7 | GAINNAS GAAS | Author keyword | 19 | 80% | 0% | 12 |
8 | RWCP OPT INTERCONNECT HITACHI | Address | 19 | 76% | 0% | 13 |
9 | ISOELECTRONIC IMPURITIES | Author keyword | 17 | 75% | 0% | 12 |
10 | GANP | Author keyword | 16 | 61% | 1% | 17 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | GAINNAS | 137 | 58% | 5% | 158 | Search GAINNAS | Search GAINNAS |
2 | DILUTE NITRIDES | 94 | 63% | 3% | 94 | Search DILUTE+NITRIDES | Search DILUTE+NITRIDES |
3 | GANAS | 63 | 70% | 2% | 53 | Search GANAS | Search GANAS |
4 | GAASN | 57 | 63% | 2% | 57 | Search GAASN | Search GAASN |
5 | INGAASN | 40 | 53% | 2% | 53 | Search INGAASN | Search INGAASN |
6 | GAINNAS GAAS | 19 | 80% | 0% | 12 | Search GAINNAS+GAAS | Search GAINNAS+GAAS |
7 | ISOELECTRONIC IMPURITIES | 17 | 75% | 0% | 12 | Search ISOELECTRONIC+IMPURITIES | Search ISOELECTRONIC+IMPURITIES |
8 | GANP | 16 | 61% | 1% | 17 | Search GANP | Search GANP |
9 | DILUTE NITRIDE | 11 | 31% | 1% | 31 | Search DILUTE+NITRIDE | Search DILUTE+NITRIDE |
10 | INNAS | 11 | 78% | 0% | 7 | Search INNAS | Search INNAS |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | GAINNAS | 687 | 72% | 19% | 536 |
2 | GAASN | 322 | 82% | 7% | 189 |
3 | GANXAS1 X | 255 | 83% | 5% | 143 |
4 | GAAS1 XNX | 205 | 78% | 5% | 134 |
5 | GAINNAS ALLOYS | 155 | 85% | 3% | 81 |
6 | GAINASN | 152 | 86% | 3% | 78 |
7 | GAASN ALLOYS | 147 | 83% | 3% | 83 |
8 | GANXP1 X ALLOYS | 93 | 87% | 2% | 46 |
9 | INGAASN | 92 | 72% | 2% | 72 |
10 | IMPROVED LUMINESCENCE EFFICIENCY | 77 | 84% | 1% | 42 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
Trends in the electronic structure of dilute nitride alloys | 2009 | 46 | 50 | 96% |
Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications | 2007 | 24 | 84 | 98% |
Theory of electronic structure evolution in GaAsN and GaPN alloys | 2001 | 285 | 87 | 75% |
Band parameters for III-V compound semiconductors and their alloys | 2001 | 2940 | 744 | 7% |
Magnetotransport study on as-grown and annealed n- and p-type modulation-doped GaInNAs/GaAs strained quantum well structures | 2014 | 2 | 13 | 77% |
Recent developments in metastable dilute-N III-V semiconductors | 2003 | 29 | 156 | 76% |
Structural and optical properties of GaInNAs/GaAs quantum structures | 2004 | 11 | 122 | 80% |
Kinetic effects in recombination of optical excitations in disordered quantum hetero structures: Theory and experiment | 2007 | 6 | 22 | 64% |
Self-assembled GaInNAs/GaAsN quantum dot lasers: solid source molecular beam epitaxy growth and high-temperature operation | 2006 | 4 | 46 | 72% |
GaAs-based long-wavelength lasers | 2000 | 71 | 86 | 48% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | SOLID STATE PHOTON | 34 | 33% | 2.9% | 84 |
2 | RWCP OPT INTERCONNECT HITACHI | 19 | 76% | 0.4% | 13 |
3 | REED PHOTON | 13 | 38% | 1.0% | 28 |
4 | GEN ELECT DEV | 12 | 86% | 0.2% | 6 |
5 | CORP CPR 7 | 11 | 100% | 0.2% | 6 |
6 | CORP PHOTON | 10 | 44% | 0.6% | 17 |
7 | RWCP OPTOELECT HITACHI | 6 | 80% | 0.1% | 4 |
8 | LETI DOPT SLIR | 6 | 100% | 0.1% | 4 |
9 | ISHIDA | 4 | 67% | 0.1% | 4 |
10 | MAT SCI SEMICOND | 4 | 67% | 0.1% | 4 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000189104 | GAASBI//BISMIDES//DILUTE BISMIDES |
2 | 0.0000109952 | GAASSB//PHOTON INFORMAT ENGN//NON MARKOVIAN GAIN MODEL |
3 | 0.0000065092 | CUBIC GAN//FB PHYS 6//HEXAGONAL GAN |
4 | 0.0000056862 | BGAAS//BORON PHOSPHIDE//BORON MONOPHOSPHIDE |
5 | 0.0000047801 | PHOTOREFLECTANCE//FIELD INDUCED CHANGE IN THE PSEUDODIELECTRIC FUNCTION//PHOTOELLIPSOMETRY |
6 | 0.0000046824 | ENERGIA SOLAR//INTERMEDIATE BAND//IMPURITY PHOTOVOLTAIC EFFECT |
7 | 0.0000042678 | FAK PHYS CHEM//INDIUM SEGREGATION//IN DESORPTION |
8 | 0.0000041797 | GAP N//PICOSECOND TIMING RESOLUTION//SI H BOND DISSOCIATION |
9 | 0.0000037698 | ADV MAT PHOTON GRP//MICROPHOTON BRANCH//ANTIMONIDE BASED LASERS |
10 | 0.0000036860 | VERTICAL EXTERNAL CAVITY SURFACE EMITTING LASER VECSEL//SEMICONDUCTOR DISK LASER//VERTICAL EXTERNAL CAVITY SURFACE EMITTING LASERS VECSELS |