Class information for:
Level 1: P GAN//OHMIC CONTACT//OHMIC CONTACTS

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
8520 1175 20.0 82%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
33 32935 GAN//NITRIDES//GALLIUM NITRIDE

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 P GAN Author keyword 23 41% 4% 44
2 OHMIC CONTACT Author keyword 22 18% 10% 112
3 OHMIC CONTACTS Author keyword 18 19% 7% 86
4 AG REFLECTOR Author keyword 15 88% 1% 7
5 CHIP DEV GRP Address 13 62% 1% 13
6 SPECIFIC CONTACT RESISTANCE Author keyword 5 21% 2% 21
7 LED BUSINESS Address 4 28% 1% 13
8 FCLED Author keyword 4 75% 0% 3
9 I V AND C V TECHNIQUES Author keyword 4 75% 0% 3
10 P TYPE GAN Author keyword 3 26% 1% 10

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class		 LCSH search Wikipedia search
1 P GAN 23 41% 4% 44 Search P+GAN Search P+GAN
2 OHMIC CONTACT 22 18% 10% 112 Search OHMIC+CONTACT Search OHMIC+CONTACT
3 OHMIC CONTACTS 18 19% 7% 86 Search OHMIC+CONTACTS Search OHMIC+CONTACTS
4 AG REFLECTOR 15 88% 1% 7 Search AG+REFLECTOR Search AG+REFLECTOR
5 SPECIFIC CONTACT RESISTANCE 5 21% 2% 21 Search SPECIFIC+CONTACT+RESISTANCE Search SPECIFIC+CONTACT+RESISTANCE
6 FCLED 4 75% 0% 3 Search FCLED Search FCLED
7 I V AND C V TECHNIQUES 4 75% 0% 3 Search I+V+AND+C+V+TECHNIQUES Search I+V+AND+C+V+TECHNIQUES
8 P TYPE GAN 3 26% 1% 10 Search P+TYPE+GAN Search P+TYPE+GAN
9 TI AL NI AU 3 60% 0% 3 Search TI+AL+NI+AU Search TI+AL+NI+AU
10 ELECTRICAL AND STRUCTURAL PROPERTIES 2 29% 1% 7 Search ELECTRICAL+AND+STRUCTURAL+PROPERTIES Search ELECTRICAL+AND+STRUCTURAL+PROPERTIES

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 LOW RESISTANCE 93 47% 13% 147
2 NI AU 54 60% 5% 59
3 TI AL 51 45% 7% 85
4 P TYPE GAN 50 27% 13% 156
5 OXIDIZED NI AU 45 94% 1% 16
6 TI AL CONTACTS 38 84% 2% 21
7 RESISTANCE OHMIC CONTACTS 37 61% 3% 39
8 OHMIC CONTACTS 31 16% 16% 185
9 N GAN 31 30% 7% 85
10 N TYPE GAN 28 18% 12% 138

Journals

Reviews


Title Publ. year Cit. Active references % act. ref.
to same field
Ohmic-Contact Technology for GaN-Based Light-Emitting Diodes: Role of P-Type Contact 2010 52 180 66%
A review of the metal-GaN contact technology 1998 210 70 56%
Preparation of metallized GaN/sapphire cross sections for TEM analysis using wedge polishing 2002 4 2 100%
Beyond CMOS: heterogeneous integration of III-V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems 2014 2 12 17%
Advanced processing of GaN for electronic devices 2000 14 87 26%
Ohmic contacts for compound semiconductors 1998 35 59 15%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 CHIP DEV GRP 13 62% 1.1% 13
2 LED BUSINESS 4 28% 1.1% 13
3 LED TEAM 3 60% 0.3% 3
4 ARTIFICIAL MICROSTRUCT MESOSCOP PH 2 38% 0.4% 5
5 CORP ADV TECHNOL GRP 2 38% 0.4% 5
6 AG ELEKTR MAT 2 67% 0.2% 2
7 PHOTON PROJECT TEAM 2 31% 0.4% 5
8 OPTO SYST 1 31% 0.3% 4
9 LIGHT EMITTING DIODE DEV 1 100% 0.2% 2
10 OPT DEVICES RD 1 50% 0.2% 2

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000184553 SOCIOTECHNO SCI TECHNOL//N GAN//GALLIUM HYDROXIDE
2 0.0000178226 LIGHT EXTRACTION EFFICIENCY//LIGHT EMITTING DIODE LED//PATTERNED SAPPHIRE SUBSTRATE PSS
3 0.0000162464 P INGAN//GAN SIC HETEROJUNCTION//COMMON EMITTER
4 0.0000157667 GAN SURFACES//INTERDISCIPLINARY MODELLING//INTERDISCIPLINARY MAT MODELLING
5 0.0000148209 OBNINSK BRANCH FED STATE UNITARY ENTERPRISE//YELLOW LUMINESCENCE//MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
6 0.0000143768 ALGAN GAN//HIGH ELECTRON MOBILITY TRANSISTOR HEMT//CURRENT COLLAPSE
7 0.0000132160 METAL SEMICONDUCTOR METAL MSM//ULTRAVIOLET UV DETECTOR//PHOTODETECTORS PDS
8 0.0000098345 NANOMETER SIZED SCHOTTKY CONTACT//METAL DOT ARRAY//NANO DIODE
9 0.0000085942 SOLID PHASE REGROWTH//PD GE//OHMIC CONTACTS
10 0.0000077373 SERIES RESISTANCE//BARRIER INHOMOGENEITY//IDEALITY FACTOR