Class information for:
Level 1: ELECTROEPITAXY//MICROCHANNEL EPITAXY//LIQUID PHASE ELECTROEPITAXY

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
8231 1206 17.4 45%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
260 18934 GAAS ON SI//GAAS SI//GAINP

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 ELECTROEPITAXY Author keyword 20 100% 1% 9
2 MICROCHANNEL EPITAXY Author keyword 15 77% 1% 10
3 LIQUID PHASE ELECTROEPITAXY Author keyword 11 78% 1% 7
4 LIQUID PHASE EPITAXY Author keyword 9 11% 6% 77
5 INGAAS BRIDGE LAYER Author keyword 6 100% 0% 4
6 INTERFACE SUPERSATURATION Author keyword 4 75% 0% 3
7 EPITAXIAL LATERAL OVERGROWTH Author keyword 4 19% 2% 20
8 COMPOSITIONAL CONVERSION Author keyword 3 100% 0% 3
9 ADV MAT RELATED TECHNOL Address 2 38% 0% 5
10 ALGAASP Author keyword 2 67% 0% 2

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class		 LCSH search Wikipedia search
1 ELECTROEPITAXY 20 100% 1% 9 Search ELECTROEPITAXY Search ELECTROEPITAXY
2 MICROCHANNEL EPITAXY 15 77% 1% 10 Search MICROCHANNEL+EPITAXY Search MICROCHANNEL+EPITAXY
3 LIQUID PHASE ELECTROEPITAXY 11 78% 1% 7 Search LIQUID+PHASE+ELECTROEPITAXY Search LIQUID+PHASE+ELECTROEPITAXY
4 LIQUID PHASE EPITAXY 9 11% 6% 77 Search LIQUID+PHASE+EPITAXY Search LIQUID+PHASE+EPITAXY
5 INGAAS BRIDGE LAYER 6 100% 0% 4 Search INGAAS+BRIDGE+LAYER Search INGAAS+BRIDGE+LAYER
6 INTERFACE SUPERSATURATION 4 75% 0% 3 Search INTERFACE+SUPERSATURATION Search INTERFACE+SUPERSATURATION
7 EPITAXIAL LATERAL OVERGROWTH 4 19% 2% 20 Search EPITAXIAL+LATERAL+OVERGROWTH Search EPITAXIAL+LATERAL+OVERGROWTH
8 COMPOSITIONAL CONVERSION 3 100% 0% 3 Search COMPOSITIONAL+CONVERSION Search COMPOSITIONAL+CONVERSION
9 ALGAASP 2 67% 0% 2 Search ALGAASP Search ALGAASP
10 BERG EFFECT 2 67% 0% 2 Search BERG+EFFECT Search BERG+EFFECT

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 LPE 29 40% 5% 57
2 LPE GROWTH 18 39% 3% 36
3 ELECTROEPITAXY 15 68% 1% 13
4 TERNARY ALLOY SEMICONDUCTORS 13 80% 1% 8
5 REGULAR SOLUTION APPROXIMATION 11 60% 1% 12
6 COMPOSITION MODULATED STRUCTURES 8 100% 0% 5
7 MASK INDUCED STRAIN 6 80% 0% 4
8 III V ALLOYS 6 31% 1% 17
9 IN1 XGAXASYP1 Y 6 21% 2% 24
10 CURRENT CONTROLLED LPE 6 100% 0% 4

Journals

Reviews


Title Publ. year Cit. Active
references		 % act. ref.
to same field
LIQUID-PHASE ELECTROEPITAXY OF SEMICONDUCTOR COMPOUNDS 1986 32 22 95%
LIQUID-PHASE EPITAXIAL-GROWTH OF III-V COMPOUND SEMICONDUCTORS WITH APPLICATION TO VISIBLE ELECTROLUMINESCENT DEVICES A REVIEW 1994 0 51 69%
LPE GROWTH OF INGAAS/INP AND ALGAINAS/INP STRUCTURES 1986 1 37 62%
ISOTHERMAL LIQUID-PHASE EPITAXY 1983 2 3 100%
EPITAXIAL-GROWTH OF INP AND RELATED ALLOYS 1986 1 96 19%
GROWTH AND CHARACTERIZATION OF INGAASP LATTICE-MATCHED TO INP 1981 19 44 27%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ.
in class
1 ADV MAT RELATED TECHNOL 2 38% 0.4% 5
2 CNRS URA 250 1 40% 0.2% 2
3 FDN CPQD 1 50% 0.1% 1
4 IMQI 1 50% 0.1% 1
5 SIB DEP 1 50% 0.1% 1
6 SUR E PHYS ENGN 1 50% 0.1% 1
7 CONCEPTS DISPOSIT PHOTON 1 25% 0.2% 2
8 OPTOELECT RD 0 20% 0.2% 2
9 FDN PESQUISA DESENVOLVIMENTO TELECOMUN 0 33% 0.1% 1
10 SYNCHROTRON STRAHLUNG 0 33% 0.1% 1

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000145531 INALAS INP//INALAS ALLOYS//INALAS ALASSB
2 0.0000135970 GAINP//GAP INP SHORT PERIOD SUPERLATTICE//SEMICONDUCTING INDIUM GALLIUM PHOSPHIDE
3 0.0000124926 OPT TRANSMISS COMPONENTS//TRANSMISS DEVICES RD S//EMCORE
4 0.0000096101 SITE OCCUPATION PREFERENCES//ATOMIC LOCAL STRUCTURE//DAFNE L
5 0.0000093119 GASB//GALLIUM ANTIMONIDE//GAINASSB
6 0.0000085217 SOLAR CELL TEST//6224//POLY SILICON FILM
7 0.0000079483 ING ELECT SEES//SECC PUEBLA//ALLOY SOURCE
8 0.0000077877 KOSSEL TECHNIQUE//LATTICE SOURCE INTERFERENCES//DETERMINATION OF LATTICE PARAMETERS
9 0.0000075654 LUMILEDS LIGHTING//ZINC DIFFUSION//ACCEPTOR DIFFUSION
10 0.0000067604 ALGAAS HETEROSTRUCTURES//EPITAXY ETCHING//QUANTUM WELL LASER STRUCTURES