Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
7901 | 1238 | 14.9 | 64% |
Classes in level above (level 2) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
270 | 18550 | SEMICONDUCTOR LASERS//IEEE JOURNAL OF QUANTUM ELECTRONICS//IEEE PHOTONICS TECHNOLOGY LETTERS |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | CATASTROPHIC OPTICAL DEGRADATION | Author keyword | 6 | 71% | 0% | 5 |
2 | THYRISTOR HETEROSTRUCTURE | Author keyword | 4 | 75% | 0% | 3 |
3 | OPTOELECT TECHNOL DEV | Address | 4 | 41% | 1% | 7 |
4 | INTERNAL OPTICAL LOSS | Author keyword | 3 | 57% | 0% | 4 |
5 | STELMAKH POLYUS | Address | 3 | 100% | 0% | 3 |
6 | NARROW STRIPE | Author keyword | 3 | 50% | 0% | 4 |
7 | SINGLE LATERAL MODE | Author keyword | 3 | 50% | 0% | 4 |
8 | CATASTROPHIC OPTICAL DAMAGE | Author keyword | 2 | 27% | 1% | 8 |
9 | 980 NM PUMP LASER | Author keyword | 2 | 67% | 0% | 2 |
10 | BIPOLAR CASCADE VCSEL | Author keyword | 2 | 67% | 0% | 2 |
Web of Science journal categories |
Author Key Words |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | MOUNTING INDUCED STRAIN | 31 | 92% | 1% | 12 |
2 | 098 MU M | 27 | 92% | 1% | 11 |
3 | INTERNAL OPTICAL LOSS | 13 | 80% | 1% | 8 |
4 | CONTINUOUS WAVE POWER | 11 | 100% | 0% | 6 |
5 | INGAASP INP HETEROSTRUCTURES | 11 | 100% | 0% | 6 |
6 | INDUCED STRESS DISTRIBUTION | 8 | 100% | 0% | 5 |
7 | REFLECTANCE MODULATION | 7 | 67% | 0% | 6 |
8 | POLARIZATION RESOLVED PHOTOLUMINESCENCE | 5 | 60% | 0% | 6 |
9 | SEPARATE CONFINEMENT HETEROSTRUCTURES | 5 | 55% | 0% | 6 |
10 | HIGH POWER OPERATION | 5 | 24% | 1% | 17 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
High power CW (16 W) and pulse (145 W) laser diodes based on quantum well heterostructures | 2007 | 13 | 8 | 88% |
Infrared imaging of semiconductor lasers | 2007 | 9 | 19 | 74% |
High-power semiconductor separate-confinement double heterostructure lasers | 2010 | 4 | 50 | 62% |
High-power broad-area diode lasers and laser bars | 2000 | 17 | 43 | 77% |
Optical strength of semiconductor laser materials | 1996 | 25 | 124 | 57% |
DIODE-LASER DEGRADATION MECHANISMS - A REVIEW | 1991 | 40 | 47 | 32% |
Epitaxy of high-power diode laser structures | 2000 | 4 | 68 | 25% |
Semiconductor lasers | 1997 | 3 | 57 | 16% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | OPTOELECT TECHNOL DEV | 4 | 41% | 0.6% | 7 |
2 | STELMAKH POLYUS | 3 | 100% | 0.2% | 3 |
3 | PHYSICOTECH SCI | 2 | 50% | 0.2% | 3 |
4 | ENGN OPTOELECT DEVICES | 2 | 26% | 0.5% | 6 |
5 | REED PHOTON | 2 | 15% | 0.9% | 11 |
6 | MIYANODAI TECHNOL DEV | 1 | 21% | 0.5% | 6 |
7 | DISCRETE SEMICOND DEVICE | 1 | 50% | 0.2% | 2 |
8 | EQUIPE THERMOPHYS INTER ES MICROSYST | 1 | 100% | 0.2% | 2 |
9 | LASER DIODES | 1 | 100% | 0.2% | 2 |
10 | BEIJING OPTOELECT TECHNOL | 1 | 14% | 0.6% | 7 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000256493 | OPTICAL TAPE//PARALLEL RECORDING//CROSSTALK CANCELER |
2 | 0.0000205869 | FERDINAND BRAUN//HIGH BRIGHTNESS LASERS//CHAIR PHOTON |
3 | 0.0000158405 | OPT TRANSMISS COMPONENTS//TRANSMISS DEVICES RD S//EMCORE |
4 | 0.0000155137 | QUANTUM WELL LASERS//ANTI GUIDING FACTOR//MULTIQUANTUM WELL LASERS |
5 | 0.0000148749 | LASER DIODE BAR//DIFFUSE LIGHT CONCENTRATION//ER YB FIBER LASER |
6 | 0.0000085412 | GAINP//GAP INP SHORT PERIOD SUPERLATTICE//SEMICONDUCTING INDIUM GALLIUM PHOSPHIDE |
7 | 0.0000067578 | CURRENT VOLTAGE CHARACTERISTICS//2DEG DENSITY//AU EVAPORATION |
8 | 0.0000060392 | FRONTIER ENGN//BRAGG REFLECTION WAVEGUIDES BRWS//ISOTROPIC SEMICONDUCTORS |
9 | 0.0000060055 | ALGAAS HETEROSTRUCTURES//EPITAXY ETCHING//QUANTUM WELL LASER STRUCTURES |
10 | 0.0000056344 | SUPERLUMINESCENT DIODE//SUPERLUMINESCENT DIODES//SUPERLUMINESCENT DIODES SLDS |