Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
7876 | 1241 | 23.8 | 77% |
Classes in level above (level 2) |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | GESN | Author keyword | 20 | 63% | 2% | 20 |
2 | L NESS | Address | 17 | 23% | 5% | 64 |
3 | GERMANIUM TIN | Author keyword | 15 | 67% | 1% | 14 |
4 | GERMANIUM TIN ALLOYS | Author keyword | 12 | 86% | 0% | 6 |
5 | GESN ALLOY | Author keyword | 9 | 83% | 0% | 5 |
6 | EPITAXIAL NANOSTRUCT SILICON SPINTRON | Address | 6 | 80% | 0% | 4 |
7 | GESN ALLOYS | Author keyword | 6 | 100% | 0% | 4 |
8 | SIGESN | Author keyword | 5 | 60% | 0% | 6 |
9 | GE LAYER | Author keyword | 4 | 75% | 0% | 3 |
10 | GE1 XSNX | Author keyword | 4 | 75% | 0% | 3 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | GESN | 20 | 63% | 2% | 20 | Search GESN | Search GESN |
2 | GERMANIUM TIN | 15 | 67% | 1% | 14 | Search GERMANIUM+TIN | Search GERMANIUM+TIN |
3 | GERMANIUM TIN ALLOYS | 12 | 86% | 0% | 6 | Search GERMANIUM+TIN+ALLOYS | Search GERMANIUM+TIN+ALLOYS |
4 | GESN ALLOY | 9 | 83% | 0% | 5 | Search GESN+ALLOY | Search GESN+ALLOY |
5 | GESN ALLOYS | 6 | 100% | 0% | 4 | Search GESN+ALLOYS | Search GESN+ALLOYS |
6 | SIGESN | 5 | 60% | 0% | 6 | Search SIGESN | Search SIGESN |
7 | GE LAYER | 4 | 75% | 0% | 3 | Search GE+LAYER | Search GE+LAYER |
8 | GE1 XSNX | 4 | 75% | 0% | 3 | Search GE1+XSNX | Search GE1+XSNX |
9 | NANO HETEROEPITAXY | 4 | 75% | 0% | 3 | Search NANO+HETEROEPITAXY | Search NANO+HETEROEPITAXY |
10 | NEAR INFRARED PHOTODETECTORS | 3 | 43% | 0% | 6 | Search NEAR+INFRARED+PHOTODETECTORS | Search NEAR+INFRARED+PHOTODETECTORS |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | HIGH QUALITY GE | 38 | 64% | 3% | 37 |
2 | THREADING DISLOCATION DENSITIES | 30 | 36% | 5% | 68 |
3 | SNXGE1 X ALLOYS | 30 | 84% | 1% | 16 |
4 | GE1 XSNX ALLOYS | 28 | 81% | 1% | 17 |
5 | GE0012X1 | 24 | 91% | 1% | 10 |
6 | GE1 XSNX | 15 | 88% | 1% | 7 |
7 | SI PHOTODETECTORS | 14 | 100% | 1% | 7 |
8 | GESN | 13 | 71% | 1% | 10 |
9 | METASTABLE GE1 XSNX ALLOYS | 11 | 100% | 0% | 6 |
10 | GEXSN1 X ALLOYS | 8 | 75% | 0% | 6 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
High-performance Ge-on-Si photodetectors | 2010 | 285 | 53 | 72% |
Ge-Photodetectors for Si-Based Optoelectronic Integration | 2011 | 51 | 49 | 86% |
Recent progress in GeSi electro-absorption modulators | 2014 | 3 | 53 | 68% |
Strained-Germanium Nanostructures for Infrared Photonics | 2014 | 3 | 63 | 51% |
Tin-based group IV semiconductors: New platforms for opto- and microelectronics on silicon | 2006 | 99 | 80 | 39% |
Germanium epitaxy on silicon | 2014 | 2 | 40 | 53% |
Technology Evolution for Silicon Nanoelectronics: Postscaling Technology | 2013 | 11 | 39 | 36% |
Epitaxial Growth of Germanium on Silicon for Light Emitters | 2012 | 3 | 31 | 71% |
Ge-on-Si photonic devices for photonic-electronic integration on a Si platform | 2014 | 0 | 73 | 63% |
Growth and applications of GeSn-related group-IV semiconductor materials | 2015 | 0 | 125 | 58% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | L NESS | 17 | 23% | 5.2% | 64 |
2 | EPITAXIAL NANOSTRUCT SILICON SPINTRON | 6 | 80% | 0.3% | 4 |
3 | MIT MICROPHOTON | 3 | 100% | 0.2% | 3 |
4 | PHYS SOLID STATE PHYS INTER ES NANOSTRUC | 3 | 100% | 0.2% | 3 |
5 | NOOEL NONLINEAR OPT OPTOELECT | 3 | 19% | 1.2% | 15 |
6 | ELE ON MICROSCOPY ETH ZURICH | 2 | 40% | 0.3% | 4 |
7 | SEMICOND PHOTON | 2 | 11% | 1.2% | 15 |
8 | NONLINEAR OPT OPTOELECT | 1 | 15% | 0.7% | 9 |
9 | WIDE BANDG SEMICOND TECHNOL DISCIPLINES STATE K | 1 | 31% | 0.3% | 4 |
10 | JOINT IHP BTU COTTBUS | 1 | 100% | 0.2% | 2 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000169574 | NI GERMANIDE//MBE//GERMANIUM GE |
2 | 0.0000143091 | STRAINED SI//SIGE//STRAINED SILICON |
3 | 0.0000110252 | ELECT MAT DEVICES NANOSTRUCT//L DLTS//CNR IMM MATIS |
4 | 0.0000104626 | SILICON PHOTONICS//IMEC//INFORMAT SCI MATH ELECT TRANSPORTAT DIMET |
5 | 0.0000096945 | STRAINED SI1 XGEX SI QUANTUM WELLS//SI SIGE SUPERLATTICE//STRAINED SIGE SI |
6 | 0.0000083616 | RADIOCRYSTALLOGRAPHY//SCI TECHNOL RUMENTAT ENGN//NANOSCALE DIFFUSION |
7 | 0.0000077823 | MOS TUNNELING DIODE//ELECTRON HOLE PLASMA RECOMBINATION//LATERAL NONUNIFORMITY LNU |
8 | 0.0000076531 | SI1 YCY//SI1 X YGEXCY//SICGE |
9 | 0.0000073224 | GAAS ON SI//GAAS SI//GAP ON SI |
10 | 0.0000065736 | GE ISLANDS//SIGE ISLANDS//HUT CLUSTERS |