Class information for:
Level 1: INTERFACIAL SILICON EMISSION//SILICON OXIDATION//LOW TEMPERATURE SILICON OXIDATION

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
7628 1266 22.4 55%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
2557 3267 INTERFACIAL SILICON EMISSION//SILICON OXIDATION//GENIE URBAIN ENVIRONM

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 INTERFACIAL SILICON EMISSION Author keyword 11 100% 0% 6
2 SILICON OXIDATION Author keyword 7 36% 1% 16
3 LOW TEMPERATURE SILICON OXIDATION Author keyword 3 100% 0% 3
4 THERMALLY GROWN SIO2 Author keyword 3 60% 0% 3
5 SI OXIDATION Author keyword 3 42% 0% 5
6 CONCENTRATED OZONE Author keyword 2 67% 0% 2
7 STRUCTURAL TRANSITION LAYER Author keyword 2 67% 0% 2
8 THEORIE PHENOMENES PHYS ITP Address 2 67% 0% 2
9 OXYGEN NEGATIVE ION Author keyword 2 50% 0% 3
10 SI EMISSION Author keyword 2 50% 0% 3

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class		 LCSH search Wikipedia search
1 INTERFACIAL SILICON EMISSION 11 100% 0% 6 Search INTERFACIAL+SILICON+EMISSION Search INTERFACIAL+SILICON+EMISSION
2 SILICON OXIDATION 7 36% 1% 16 Search SILICON+OXIDATION Search SILICON+OXIDATION
3 LOW TEMPERATURE SILICON OXIDATION 3 100% 0% 3 Search LOW+TEMPERATURE+SILICON+OXIDATION Search LOW+TEMPERATURE+SILICON+OXIDATION
4 THERMALLY GROWN SIO2 3 60% 0% 3 Search THERMALLY+GROWN+SIO2 Search THERMALLY+GROWN+SIO2
5 SI OXIDATION 3 42% 0% 5 Search SI+OXIDATION Search SI+OXIDATION
6 CONCENTRATED OZONE 2 67% 0% 2 Search CONCENTRATED+OZONE Search CONCENTRATED+OZONE
7 STRUCTURAL TRANSITION LAYER 2 67% 0% 2 Search STRUCTURAL+TRANSITION+LAYER Search STRUCTURAL+TRANSITION+LAYER
8 OXYGEN NEGATIVE ION 2 50% 0% 3 Search OXYGEN+NEGATIVE+ION Search OXYGEN+NEGATIVE+ION
9 SI EMISSION 2 50% 0% 3 Search SI+EMISSION Search SI+EMISSION
10 THERMAL SIO2 2 33% 0% 4 Search THERMAL+SIO2 Search THERMAL+SIO2

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 DRY OXYGEN 27 46% 3% 44
2 10 MTORR 18 89% 1% 8
3 THIN REGIME 14 59% 1% 16
4 SI001 SIO2 INTERFACE 14 42% 2% 25
5 SI100 SIO2 INTERFACE 11 60% 1% 12
6 DISTRIBUTED EPITAXIAL OXIDE 9 83% 0% 5
7 SIO2 SI INTERFACE 8 15% 4% 48
8 SILICON OXIDATION 6 27% 1% 18
9 RELAXED MODELS 5 63% 0% 5
10 PLASMA ANODIZATION 5 50% 1% 7

Journals

Reviews


Title Publ. year Cit. Active references % act. ref.
to same field
Silicon oxidation by ozone 2009 9 82 51%
GROWTH-MECHANISM OF THIN SILICON-OXIDE FILMS ON SI(100) STUDIED BY MEDIUM-ENERGY ION-SCATTERING 1995 139 84 36%
MODELS FOR THE OXIDATION OF SILICON 1988 63 60 72%
Photon-assisted oxidation and oxide thin film synthesis: A review 2009 22 267 10%
Characterization and production metrology of thin transistor gate oxide films 1999 41 48 23%
OXIDATION OF SILICON - THE VLSI GATE DIELECTRIC 1995 73 91 21%
The structural aspects of non-crystalline SiO2 films on silicon: a review 2003 10 36 31%
Remote plasma-assisted oxidation of SiC: a low temperature process for SiC-SiO2 interface formation that eliminates interfacial Si oxycarbide transition regions 2004 4 33 24%
REVIEW OF OXIDATION PROCESSES IN PLASMAS 1983 38 8 100%
SILICON OXIDATION - A PROCESS STEP FOR THE MANUFACTURE OF INTEGRATED-CIRCUITS 1985 0 9 100%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ.
in class
1 THEORIE PHENOMENES PHYS ITP 2 67% 0.2% 2
2 SHIGA TECHNOL 1 29% 0.3% 4
3 LSI BUSINESS TECHNOL DEV GRP 1 40% 0.2% 2
4 PPH ECUBLENS 1 17% 0.4% 5
5 IMAGE TECHNOL GRP 1 33% 0.2% 2
6 CNC CO 1 50% 0.1% 1
7 CNRS URA 835 1 50% 0.1% 1
8 NEW DISPLAY DEVICE 1 50% 0.1% 1
9 PHYS MAT KANAZAWA KU 1 50% 0.1% 1
10 SB ITP CSEA 1 50% 0.1% 1

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000257876 TRANSLATIONAL KINETIC ENERGY//POINT DEFECT GENERATION//OXYGEN MOLECULAR BEAM
2 0.0000195911 HYDROGEN TERMINATION//SHIZUOKA TORY//LAYER BY LAYER OXIDATION
3 0.0000168745 FILM EDGE//SHAPE ENGINEERING//SILICON TECHNOLOGIES
4 0.0000157373 BORON PENETRATION//REMOTE PLASMA NITRIDATION RPN//SI NITRIDE
5 0.0000087903 GENIE URBAIN ENVIRONM//COMPUTERISING//OXYNITRIDE FILMS
6 0.0000078426 CONE DEFECT//DYED RESIST//NITRIDE BUBBLES
7 0.0000077407 SIPOS//MSOS O P STRUCTURE//SEMI INSULATING POLYCRYSTALLINE SILICON
8 0.0000077032 MOS TUNNELING DIODE//ELECTRON HOLE PLASMA RECOMBINATION//LATERAL NONUNIFORMITY LNU
9 0.0000064661 RAPID THERMAL PROCESSING RTP//RAPID THERMAL PROCESSING//CTOD FRACTURE TOUGHNESS TESTING
10 0.0000062354 POLYOXIDE//INTERPOLY OXIDE//NONPLANAR POLYOXIDE