Class information for:
Level 1: MAGNETIC FIELD ASSISTED CZOCHRALSKI METHOD//CZOCHRALSKI METHOD//CZOCHRALSKI CRYSTAL GROWTH

Basic class information

ID Publications Average number
of references
Avg. shr. active
ref. in WoS
7412 1291 18.6 54%



Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)



ID, lev.
above
Publications Label for level above
1274 8321 THERMOCAPILLARY CONVECTION//CZOCHRALSKI METHOD//MARANGONI CONVECTION

Terms with highest relevance score



Rank Term Type of term Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ. in
class
1 MAGNETIC FIELD ASSISTED CZOCHRALSKI METHOD Author keyword 55 87% 2% 27
2 CZOCHRALSKI METHOD Author keyword 50 22% 15% 196
3 CZOCHRALSKI CRYSTAL GROWTH Author keyword 35 72% 2% 28
4 SI MELT Author keyword 21 85% 1% 11
5 SEMICONDUCTING SILICON Author keyword 15 16% 6% 81
6 CRYSTAL GROWTH TECHNOL TEAM Address 14 100% 1% 7
7 CZ SI GROWTH Author keyword 14 100% 1% 7
8 CZOCHRALSKI Author keyword 13 27% 3% 43
9 MAT SCI WW 6 Address 12 86% 0% 6
10 MODEL BASED FEEDBACK CONTROL Author keyword 9 83% 0% 5

Web of Science journal categories

Author Key Words



Rank Web of Science journal category Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ. in
class
LCSH search Wikipedia search
1 MAGNETIC FIELD ASSISTED CZOCHRALSKI METHOD 55 87% 2% 27 Search MAGNETIC+FIELD+ASSISTED+CZOCHRALSKI+METHOD Search MAGNETIC+FIELD+ASSISTED+CZOCHRALSKI+METHOD
2 CZOCHRALSKI METHOD 50 22% 15% 196 Search CZOCHRALSKI+METHOD Search CZOCHRALSKI+METHOD
3 CZOCHRALSKI CRYSTAL GROWTH 35 72% 2% 28 Search CZOCHRALSKI+CRYSTAL+GROWTH Search CZOCHRALSKI+CRYSTAL+GROWTH
4 SI MELT 21 85% 1% 11 Search SI+MELT Search SI+MELT
5 SEMICONDUCTING SILICON 15 16% 6% 81 Search SEMICONDUCTING+SILICON Search SEMICONDUCTING+SILICON
6 CZ SI GROWTH 14 100% 1% 7 Search CZ+SI+GROWTH Search CZ+SI+GROWTH
7 CZOCHRALSKI 13 27% 3% 43 Search CZOCHRALSKI Search CZOCHRALSKI
8 MODEL BASED FEEDBACK CONTROL 9 83% 0% 5 Search MODEL+BASED+FEEDBACK+CONTROL Search MODEL+BASED+FEEDBACK+CONTROL
9 KYROPOULOS METHOD 9 59% 1% 10 Search KYROPOULOS+METHOD Search KYROPOULOS+METHOD
10 FLUID FLOWS 7 17% 3% 39 Search FLUID+FLOWS Search FLUID+FLOWS

Key Words Plus



Rank Web of Science journal category Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ. in
class
1 SEEDING PROCESS 44 100% 1% 16
2 SILICON MELT 44 76% 2% 31
3 INTERFACE INVERSION 35 74% 2% 26
4 OXIDE MELT 30 79% 1% 19
5 CZOCHRALSKI CRYSTAL GROWTH 23 48% 3% 35
6 THERMAL CAPILLARY MODEL 21 85% 1% 11
7 DOPANT TRANSPORT 20 100% 1% 9
8 MELT MOTION 17 62% 1% 18
9 SEMITRANSPARENT CRYSTALS 17 72% 1% 13
10 NONROTATING CRYSTAL 15 88% 1% 7

Journals

Reviews



Title Publ. year Cit. Active references % act. ref.
to same field
THE USE OF MAGNETIC-FIELDS IN SEMICONDUCTOR CRYSTAL-GROWTH 1991 158 53 75%
Thermodynamics and phase stability in the Si-O system 2004 50 59 37%
Direct observation and numerical simulation of molten silicon flow during crystal growth under magnetic fields by X-ray radiography and large-scale computation 1999 12 16 100%
A Review of the Automation of the Czochralski Crystal Growth Process 2013 1 54 76%
Recent progress of crystal growth modeling and growth control 2004 44 118 31%
Modelling the dynamics and control design for Czochralski, Liquid Encapsulated Czochralski and Floating Zone processes 2010 2 13 85%
FLOW INSTABILITY DURING CRYSTAL-GROWTH FROM THE MELT 1995 13 23 91%
Models of melt motion, heat transfer and mass transport during crystal growth with strong magnetic fields 1999 16 23 65%
THEORY OF TRANSPORT PROCESSES IN SINGLE-CRYSTAL GROWTH FROM THE MELT 1988 223 91 34%
Reduction of Oxygen Impurity in Multicrystalline Silicon Production 2013 2 23 39%

Address terms



Rank Address term Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ.
in class
1 CRYSTAL GROWTH TECHNOL TEAM 14 100% 0.5% 7
2 MAT SCI WW 6 12 86% 0.5% 6
3 SILICON MELT ADV PROJECT 8 70% 0.5% 7
4 AFRLSNHC 4 75% 0.2% 3
5 LTSE 4 50% 0.5% 6
6 BIOL FUNCT INFORMAT RUMENTS 3 100% 0.2% 3
7 FAK VERFAHRENSTECH 2 67% 0.2% 2
8 MAT SCI WW6 2 29% 0.5% 6
9 PROC ENGN VT 1 100% 0.2% 2
10 SECOND TERM PROJECT 985 1 100% 0.2% 2

Related classes at same level (level 1)



Rank Relatedness score Related classes
1 0.0000226699 ACCELERATED CRUCIBLE ROTATION TECHNIQUE//DETACHED SOLIDIFICATION//ACRT
2 0.0000211077 EDGE DEFINED FILM FED GROWTH//SHAPED CRYSTAL GROWTH//STEPANOV METHOD
3 0.0000193262 THERMALLY INDUCED FLOW//TURBINE DISCIPLINE ENGN OPTIMIZAT GRP//CNRSINSA LYONECL
4 0.0000163351 HYDROTHERMAL WAVE//THERMOCAPILLARY CONVECTION//THERMOCAPILLARY FLOW
5 0.0000105647 METALLURGICAL GRADE SILICON//SOLAR GRADE SILICON//MULTICRYSTALLINE SILICON
6 0.0000091248 SIGE SINGLE CRYSTAL//GERMANIUM SILICON ALLOYS//AXIAL HEAT PROCESSING
7 0.0000084510 OXYGEN PRECIPITATION//GROWN IN DEFECT//CZOCHRALSKI SILICON
8 0.0000081850 EL2//CARBON ACCEPTOR//SEMI INSULATING GALLIUM ARSENIDE
9 0.0000061115 ELECTROMAGNETIC CONTINUOUS CASTING//ELECTROMAGNETIC CASTING//ELECTROMAGNETIC STIRRING
10 0.0000059586 G JITTER//SLOSHING DYNAMICS//MAT SCI MICROGRAV PLICAT GRP