Class information for:
Level 1: HEAVY B DOPING//CONCEPTS DISPOSITIFS PHOTON//UMR 6630

Basic class information

ID Publications Average number
of references
Avg. shr. active
ref. in WoS
7390 1293 22.5 44%



Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)



ID, lev.
above
Publications Label for level above
1342 7876 EDGE DEFINED FILM FED GROWTH//MULTICRYSTALLINE SILICON//PROGRESS IN PHOTOVOLTAICS

Terms with highest relevance score



Rank Term Type of term Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ. in
class
1 HEAVY B DOPING Author keyword 8 75% 0% 6
2 CONCEPTS DISPOSITIFS PHOTON Address 6 58% 1% 7
3 UMR 6630 Address 6 12% 3% 45
4 HEAVY B AND GE CODOPING Author keyword 6 100% 0% 4
5 DISLOCATION IMPURITY INTERACTION Author keyword 4 67% 0% 4
6 ABT MET PHYS Address 3 57% 0% 4
7 UMR 6630SP2MI TELEPORT Address 3 100% 0% 3
8 UPR 20 Address 3 11% 2% 23
9 NECKING PROCESS Author keyword 2 67% 0% 2
10 DISLOCATION FREE Author keyword 2 29% 0% 6

Web of Science journal categories

Author Key Words



Rank Web of Science journal category Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ.
in class
LCSH search Wikipedia search
1 HEAVY B DOPING 8 75% 0% 6 Search HEAVY+B+DOPING Search HEAVY+B+DOPING
2 HEAVY B AND GE CODOPING 6 100% 0% 4 Search HEAVY+B+AND+GE+CODOPING Search HEAVY+B+AND+GE+CODOPING
3 DISLOCATION IMPURITY INTERACTION 4 67% 0% 4 Search DISLOCATION+IMPURITY+INTERACTION Search DISLOCATION+IMPURITY+INTERACTION
4 NECKING PROCESS 2 67% 0% 2 Search NECKING+PROCESS Search NECKING+PROCESS
5 DISLOCATION FREE 2 29% 0% 6 Search DISLOCATION+FREE Search DISLOCATION+FREE
6 SI CRYSTAL 2 26% 0% 5 Search SI+CRYSTAL Search SI+CRYSTAL
7 30 DEGREES PARTIAL DISLOCATION 1 100% 0% 2 Search 30+DEGREES+PARTIAL+DISLOCATION Search 30+DEGREES+PARTIAL+DISLOCATION
8 90 DEGREES PARTIAL DISLOCATION 1 100% 0% 2 Search 90+DEGREES+PARTIAL+DISLOCATION Search 90+DEGREES+PARTIAL+DISLOCATION
9 ALLOY HARDENING 1 50% 0% 2 Search ALLOY+HARDENING Search ALLOY+HARDENING
10 DASH NECKING 1 100% 0% 2 Search DASH+NECKING Search DASH+NECKING

Key Words Plus



Rank Web of Science journal category Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ. in
class
1 90 DEGREES PARTIAL DISLOCATION 38 60% 3% 41
2 DASH NECKING 17 75% 1% 12
3 CORE RECONSTRUCTION 14 100% 1% 7
4 GAAS SINGLE CRYSTALS 10 46% 1% 17
5 HIGH STRESS 9 52% 1% 12
6 PERFORMANCE LASER DIODES 8 100% 0% 5
7 YIELD POINT 6 26% 2% 21
8 60 DEGREES DISLOCATIONS 5 60% 0% 6
9 SILICON CRYSTALS 5 14% 3% 35
10 DYNAMICAL RECOVERY 4 75% 0% 3

Journals

Reviews



Title Publ. year Cit. Active references % act. ref.
to same field
THE DISLOCATION CORE IN CRYSTALLINE MATERIALS 1991 109 116 33%
Plastic deformation of III-V semiconductors under concentrated load 2003 23 65 49%
Deformation behavior of silicon 1999 26 11 73%
PROPERTIES OF II-VI SEMICONDUCTORS ASSOCIATED WITH MOVING DISLOCATIONS 1986 93 30 83%
TEM-nanoindentation studies of semiconducting structures 2007 9 51 43%
Dislocation motion controlled by interactions with crystal lattice: modelling and experiments 2005 2 37 51%
THE PLASTICITY OF ELEMENTAL AND COMPOUND SEMICONDUCTORS 1992 6 69 68%
A REVIEW OF THE DETERMINATION OF DISLOCATION PARAMETERS USING STRONG-BEAM AND WEAK-BEAM ELECTRON-MICROSCOPY 1989 3 24 75%
VACANCIES AND THEIR COMPLEXES IN THE CORE OF SCREW DISLOCATIONS - MODELS WHICH ACCOUNT FOR ESR INVESTIGATIONS OF DEFORMED SILICON 1990 19 14 29%
MECHANICAL-BEHAVIOR OF COMPOUND SEMICONDUCTORS 1992 1 63 41%

Address terms



Rank Address term Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ. in
class
1 CONCEPTS DISPOSITIFS PHOTON 6 58% 0.5% 7
2 UMR 6630 6 12% 3.5% 45
3 ABT MET PHYS 3 57% 0.3% 4
4 UMR 6630SP2MI TELEPORT 3 100% 0.2% 3
5 UPR 20 3 11% 1.8% 23
6 UMR CNRS 6630 2 22% 0.5% 7
7 CONCEPTS DISPOSIT PHOTON 1 38% 0.2% 3
8 URA 250 1 22% 0.4% 5
9 SWISS S MAT SCI TECHNOL 1 40% 0.2% 2
10 CNRSSP2MI TELEPORT 1 50% 0.1% 1

Related classes at same level (level 1)



Rank Relatedness score Related classes
1 0.0000199967 BANDLIKE STATES//DISLOCATION ENGINEERED//RECOMBINATION STRENGTH
2 0.0000114081 PEIERLS STRESS//PEIERLS ENERGY//PEIERLS NABARRO MODEL
3 0.0000087533 MISFIT DISLOCATIONS//GRADED BUFFER LAYER//DISLOCATION COMPENSATION
4 0.0000077850 ELECTRONIC RADIATION//RUMENTAT MESU//CROSS SECTIONAL SEM
5 0.0000074236 ANAL STRUCT MAT//UNITE RECH PHYS SOLIDE//TECHNOL SILICIUM
6 0.0000073927 MONOCRYSTALLINE SILICON SURFACE//AU SI THIN FILMS//FOCUSSED ION BEAM MICROSCOPY
7 0.0000070273 CHARGED DISLOCATIONS//IMPURITY DEFECT COMPOSITION//TRAINING PHYS CHEM MAT SCI
8 0.0000069004 NANOMETRIC CUTTING//INCIPIENT PLASTICITY//QUASI STEADY MOLECULAR STATICS
9 0.0000060568 DISLOCATION EMISSION//DISLOCATION FREE ZONE//CORROSION INDUCED STRESS
10 0.0000055806 EL2//CARBON ACCEPTOR//SEMI INSULATING GALLIUM ARSENIDE