Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
7390 | 1293 | 22.5 | 44% |
Classes in level above (level 2) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
1342 | 7876 | EDGE DEFINED FILM FED GROWTH//MULTICRYSTALLINE SILICON//PROGRESS IN PHOTOVOLTAICS |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | HEAVY B DOPING | Author keyword | 8 | 75% | 0% | 6 |
2 | CONCEPTS DISPOSITIFS PHOTON | Address | 6 | 58% | 1% | 7 |
3 | UMR 6630 | Address | 6 | 12% | 3% | 45 |
4 | HEAVY B AND GE CODOPING | Author keyword | 6 | 100% | 0% | 4 |
5 | DISLOCATION IMPURITY INTERACTION | Author keyword | 4 | 67% | 0% | 4 |
6 | ABT MET PHYS | Address | 3 | 57% | 0% | 4 |
7 | UMR 6630SP2MI TELEPORT | Address | 3 | 100% | 0% | 3 |
8 | UPR 20 | Address | 3 | 11% | 2% | 23 |
9 | NECKING PROCESS | Author keyword | 2 | 67% | 0% | 2 |
10 | DISLOCATION FREE | Author keyword | 2 | 29% | 0% | 6 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | HEAVY B DOPING | 8 | 75% | 0% | 6 | Search HEAVY+B+DOPING | Search HEAVY+B+DOPING |
2 | HEAVY B AND GE CODOPING | 6 | 100% | 0% | 4 | Search HEAVY+B+AND+GE+CODOPING | Search HEAVY+B+AND+GE+CODOPING |
3 | DISLOCATION IMPURITY INTERACTION | 4 | 67% | 0% | 4 | Search DISLOCATION+IMPURITY+INTERACTION | Search DISLOCATION+IMPURITY+INTERACTION |
4 | NECKING PROCESS | 2 | 67% | 0% | 2 | Search NECKING+PROCESS | Search NECKING+PROCESS |
5 | DISLOCATION FREE | 2 | 29% | 0% | 6 | Search DISLOCATION+FREE | Search DISLOCATION+FREE |
6 | SI CRYSTAL | 2 | 26% | 0% | 5 | Search SI+CRYSTAL | Search SI+CRYSTAL |
7 | 30 DEGREES PARTIAL DISLOCATION | 1 | 100% | 0% | 2 | Search 30+DEGREES+PARTIAL+DISLOCATION | Search 30+DEGREES+PARTIAL+DISLOCATION |
8 | 90 DEGREES PARTIAL DISLOCATION | 1 | 100% | 0% | 2 | Search 90+DEGREES+PARTIAL+DISLOCATION | Search 90+DEGREES+PARTIAL+DISLOCATION |
9 | ALLOY HARDENING | 1 | 50% | 0% | 2 | Search ALLOY+HARDENING | Search ALLOY+HARDENING |
10 | DASH NECKING | 1 | 100% | 0% | 2 | Search DASH+NECKING | Search DASH+NECKING |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | 90 DEGREES PARTIAL DISLOCATION | 38 | 60% | 3% | 41 |
2 | DASH NECKING | 17 | 75% | 1% | 12 |
3 | CORE RECONSTRUCTION | 14 | 100% | 1% | 7 |
4 | GAAS SINGLE CRYSTALS | 10 | 46% | 1% | 17 |
5 | HIGH STRESS | 9 | 52% | 1% | 12 |
6 | PERFORMANCE LASER DIODES | 8 | 100% | 0% | 5 |
7 | YIELD POINT | 6 | 26% | 2% | 21 |
8 | 60 DEGREES DISLOCATIONS | 5 | 60% | 0% | 6 |
9 | SILICON CRYSTALS | 5 | 14% | 3% | 35 |
10 | DYNAMICAL RECOVERY | 4 | 75% | 0% | 3 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
THE DISLOCATION CORE IN CRYSTALLINE MATERIALS | 1991 | 109 | 116 | 33% |
Plastic deformation of III-V semiconductors under concentrated load | 2003 | 23 | 65 | 49% |
Deformation behavior of silicon | 1999 | 26 | 11 | 73% |
PROPERTIES OF II-VI SEMICONDUCTORS ASSOCIATED WITH MOVING DISLOCATIONS | 1986 | 93 | 30 | 83% |
TEM-nanoindentation studies of semiconducting structures | 2007 | 9 | 51 | 43% |
Dislocation motion controlled by interactions with crystal lattice: modelling and experiments | 2005 | 2 | 37 | 51% |
THE PLASTICITY OF ELEMENTAL AND COMPOUND SEMICONDUCTORS | 1992 | 6 | 69 | 68% |
A REVIEW OF THE DETERMINATION OF DISLOCATION PARAMETERS USING STRONG-BEAM AND WEAK-BEAM ELECTRON-MICROSCOPY | 1989 | 3 | 24 | 75% |
VACANCIES AND THEIR COMPLEXES IN THE CORE OF SCREW DISLOCATIONS - MODELS WHICH ACCOUNT FOR ESR INVESTIGATIONS OF DEFORMED SILICON | 1990 | 19 | 14 | 29% |
MECHANICAL-BEHAVIOR OF COMPOUND SEMICONDUCTORS | 1992 | 1 | 63 | 41% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | CONCEPTS DISPOSITIFS PHOTON | 6 | 58% | 0.5% | 7 |
2 | UMR 6630 | 6 | 12% | 3.5% | 45 |
3 | ABT MET PHYS | 3 | 57% | 0.3% | 4 |
4 | UMR 6630SP2MI TELEPORT | 3 | 100% | 0.2% | 3 |
5 | UPR 20 | 3 | 11% | 1.8% | 23 |
6 | UMR CNRS 6630 | 2 | 22% | 0.5% | 7 |
7 | CONCEPTS DISPOSIT PHOTON | 1 | 38% | 0.2% | 3 |
8 | URA 250 | 1 | 22% | 0.4% | 5 |
9 | SWISS S MAT SCI TECHNOL | 1 | 40% | 0.2% | 2 |
10 | CNRSSP2MI TELEPORT | 1 | 50% | 0.1% | 1 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000199967 | BANDLIKE STATES//DISLOCATION ENGINEERED//RECOMBINATION STRENGTH |
2 | 0.0000114081 | PEIERLS STRESS//PEIERLS ENERGY//PEIERLS NABARRO MODEL |
3 | 0.0000087533 | MISFIT DISLOCATIONS//GRADED BUFFER LAYER//DISLOCATION COMPENSATION |
4 | 0.0000077850 | ELECTRONIC RADIATION//RUMENTAT MESU//CROSS SECTIONAL SEM |
5 | 0.0000074236 | ANAL STRUCT MAT//UNITE RECH PHYS SOLIDE//TECHNOL SILICIUM |
6 | 0.0000073927 | MONOCRYSTALLINE SILICON SURFACE//AU SI THIN FILMS//FOCUSSED ION BEAM MICROSCOPY |
7 | 0.0000070273 | CHARGED DISLOCATIONS//IMPURITY DEFECT COMPOSITION//TRAINING PHYS CHEM MAT SCI |
8 | 0.0000069004 | NANOMETRIC CUTTING//INCIPIENT PLASTICITY//QUASI STEADY MOLECULAR STATICS |
9 | 0.0000060568 | DISLOCATION EMISSION//DISLOCATION FREE ZONE//CORROSION INDUCED STRESS |
10 | 0.0000055806 | EL2//CARBON ACCEPTOR//SEMI INSULATING GALLIUM ARSENIDE |