Class information for:
Level 1: SPECIFIC ON RESISTANCE//BREAKDOWN VOLTAGE BV//LDMOS

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
7243 1314 14.1 43%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
1993 5054 NANOELECT GIGASCALE SYST//ELECTROSTATIC DISCHARGE ESD//SILICON CONTROLLED RECTIFIER SCR

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 SPECIFIC ON RESISTANCE Author keyword 52 58% 4% 59
2 BREAKDOWN VOLTAGE BV Author keyword 42 74% 2% 31
3 LDMOS Author keyword 28 31% 6% 76
4 BREAKDOWN VOLTAGE Author keyword 26 16% 11% 146
5 POWER MOSFET Author keyword 25 27% 6% 79
6 ON RESISTANCE Author keyword 16 30% 3% 43
7 TRENCH GATE Author keyword 14 53% 1% 19
8 RESURF Author keyword 13 38% 2% 27
9 SUPERJUNCTION SJ Author keyword 13 62% 1% 13
10 QUASI SATURATION Author keyword 12 63% 1% 12

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class		 LCSH search Wikipedia search
1 SPECIFIC ON RESISTANCE 52 58% 4% 59 Search SPECIFIC+ON+RESISTANCE Search SPECIFIC+ON+RESISTANCE
2 BREAKDOWN VOLTAGE BV 42 74% 2% 31 Search BREAKDOWN+VOLTAGE+BV Search BREAKDOWN+VOLTAGE+BV
3 LDMOS 28 31% 6% 76 Search LDMOS Search LDMOS
4 BREAKDOWN VOLTAGE 26 16% 11% 146 Search BREAKDOWN+VOLTAGE Search BREAKDOWN+VOLTAGE
5 POWER MOSFET 25 27% 6% 79 Search POWER+MOSFET Search POWER+MOSFET
6 ON RESISTANCE 16 30% 3% 43 Search ON+RESISTANCE Search ON+RESISTANCE
7 TRENCH GATE 14 53% 1% 19 Search TRENCH+GATE Search TRENCH+GATE
8 RESURF 13 38% 2% 27 Search RESURF Search RESURF
9 SUPERJUNCTION SJ 13 62% 1% 13 Search SUPERJUNCTION+SJ Search SUPERJUNCTION+SJ
10 QUASI SATURATION 12 63% 1% 12 Search QUASI+SATURATION Search QUASI+SATURATION

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 ON RESISTANCE 79 65% 6% 74
2 LDMOS 32 54% 3% 42
3 DRIFT REGION 23 86% 1% 12
4 INCLUDING QUASI SATURATION 23 100% 1% 10
5 BREAKDOWN VOLTAGE 15 19% 5% 71
6 BREAKDOWN VOLTAGE IMPROVEMENT 12 86% 0% 6
7 VDMOS 12 86% 0% 6
8 BURIED LAYER 9 45% 1% 15
9 LDMOST 9 83% 0% 5
10 RESURF LDMOS 8 70% 1% 7

Journals

Reviews


Title Publ. year Cit. Active
references		 % act. ref.
to same field
A review of HVI technology 2014 1 17 94%
SILICON-ON-INSULATOR DEVICES FOR HIGH-VOLTAGE AND POWER IC APPLICATIONS 1994 35 6 83%
Review of Silicon Power Semiconductor Technologies for Power Supply on Chip and Power Supply in Package Applications 2013 5 5 40%
A Review of Super Junction LDMOS 2011 4 5 100%
High-Power Microwave LDMOS Transistors for Wireless Data Transmission Technologies (Review) 2010 0 3 100%
RF transistors: Recent developments and roadmap toward terahertz applications 2007 40 28 11%
A review of safe operation area 2006 4 8 50%
AN OVERVIEW OF SMART POWER TECHNOLOGY 1991 71 7 29%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 ASIC SYST ENGN 5 17% 2.1% 28
2 ANALOGUE INTEGRATED CIRCUITS 5 55% 0.5% 6
3 24 4 41% 0.5% 7
4 MINIST EDUC WIDE BAND G SEMICOND MAT DEVICES 3 15% 1.2% 16
5 INFORMAT TELECOMMUN SYST CO 2 44% 0.3% 4
6 GUANGXI WIRELESS WIDEBAND COMMUN SIGNAL 2 67% 0.2% 2
7 POWER DEVICES SYST GRP 2 67% 0.2% 2
8 SMARTMOS TECHNOL 2 43% 0.2% 3
9 CHINA 24 1 100% 0.2% 2
10 CORP ENGN DEVICE INFRA TEAM 1 100% 0.2% 2

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000163520 INSULATED GATE BIPOLAR TRANSISTOR IGBT//LATERAL INSULATED GATE BIPOLAR TRANSISTOR LIGBT//INSULATED GATE BIPOLAR TRANSISTORS IGBTS
2 0.0000110020 HORIZONTAL CURRENT BIPOLAR TRANSISTOR HCBT//DYNAMIC THRESHOLD MOSFET DTMOS//LATERAL BIPOLAR TRANSISTOR
3 0.0000084249 NONQUASI STATIC NQS EFFECT//QUCS//RSCE
4 0.0000079467 HOT CARRIER//CHANNEL INITIATED SECONDARY ELECTRON CHISEL//HOT CARRIER DEGRADATION
5 0.0000070144 BEAM CHANNEL TRANSISTOR//IMPURITY ENHANCED OXIDATION//BIPOLAR MODE FIELD EFFECT TRANSISTORS BMFETS
6 0.0000069604 NANOELECT GIGASCALE SYST//ELECTROSTATIC DISCHARGE ESD//SILICON CONTROLLED RECTIFIER SCR
7 0.0000066455 SIPOS//MSOS O P STRUCTURE//SEMI INSULATING POLYCRYSTALLINE SILICON
8 0.0000058566 4H SIC MESFET//MESFET//MESFETS
9 0.0000046409 DOUBLE GATE MOSFET//FINFET//SHORT CHANNEL EFFECTS
10 0.0000045429 SINGLE EVENT BURNOUT SEB//SINGLE EVENT GATE RUPTURE SEGR//RREACT GRP