Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
709 | 3076 | 21.4 | 60% |
Classes in level above (level 2) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
372 | 16511 | SWAMP//OXYGEN PRECIPITATION//GROWN IN DEFECT |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | TRANSIENT ENHANCED DIFFUSION | Author keyword | 83 | 69% | 2% | 72 |
2 | SWAMP | Address | 40 | 79% | 1% | 26 |
3 | PAIR DIFFUSION MODEL | Author keyword | 23 | 100% | 0% | 10 |
4 | MOLECULAR ION IMPLANTATION | Author keyword | 21 | 85% | 0% | 11 |
5 | SHALLOW JUNCTION | Author keyword | 16 | 30% | 1% | 43 |
6 | ION IMPLANTAT GRP | Address | 15 | 67% | 0% | 14 |
7 | IMETEM | Address | 13 | 25% | 1% | 46 |
8 | MATIS | Address | 9 | 17% | 1% | 45 |
9 | 311 DEFECTS | Author keyword | 8 | 100% | 0% | 5 |
10 | PARAMETR CONDUCT IMPLANT | Address | 8 | 100% | 0% | 5 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | TRANSIENT ENHANCED DIFFUSION | 83 | 69% | 2% | 72 | Search TRANSIENT+ENHANCED+DIFFUSION | Search TRANSIENT+ENHANCED+DIFFUSION |
2 | PAIR DIFFUSION MODEL | 23 | 100% | 0% | 10 | Search PAIR+DIFFUSION+MODEL | Search PAIR+DIFFUSION+MODEL |
3 | MOLECULAR ION IMPLANTATION | 21 | 85% | 0% | 11 | Search MOLECULAR+ION+IMPLANTATION | Search MOLECULAR+ION+IMPLANTATION |
4 | SHALLOW JUNCTION | 16 | 30% | 1% | 43 | Search SHALLOW+JUNCTION | Search SHALLOW+JUNCTION |
5 | 311 DEFECTS | 8 | 100% | 0% | 5 | Search 311+DEFECTS | Search 311+DEFECTS |
6 | END OF RANGE DEFECTS | 8 | 62% | 0% | 8 | Search END+OF+RANGE+DEFECTS | Search END+OF+RANGE+DEFECTS |
7 | TRANSIENT ENHANCED DIFFUSION TED | 8 | 62% | 0% | 8 | Search TRANSIENT+ENHANCED+DIFFUSION+TED | Search TRANSIENT+ENHANCED+DIFFUSION+TED |
8 | DOPANT DIFFUSION | 7 | 30% | 1% | 19 | Search DOPANT+DIFFUSION | Search DOPANT+DIFFUSION |
9 | BORON DIFFUSION | 7 | 27% | 1% | 21 | Search BORON+DIFFUSION | Search BORON+DIFFUSION |
10 | 311 DEFECT | 6 | 80% | 0% | 4 | Search 311+DEFECT | Search 311+DEFECT |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | TRANSIENT ENHANCED DIFFUSION | 371 | 72% | 9% | 291 |
2 | DOPANT DIFFUSION | 307 | 67% | 9% | 275 |
3 | B DIFFUSION | 115 | 85% | 2% | 61 |
4 | BORON DIFFUSION | 103 | 49% | 5% | 151 |
5 | ION IMPLANTED SILICON | 66 | 46% | 3% | 106 |
6 | ELECTRICAL DEACTIVATION | 59 | 84% | 1% | 32 |
7 | BORON INTERSTITIAL CLUSTERS | 42 | 94% | 0% | 15 |
8 | PREAMORPHIZED SILICON | 40 | 76% | 1% | 28 |
9 | ENHANCED DIFFUSION | 38 | 31% | 3% | 101 |
10 | IMPLANTED SILICON | 35 | 29% | 3% | 102 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
Transient enhanced diffusion of boron in Si | 2002 | 167 | 83 | 90% |
Mechanisms of boron diffusion in silicon and germanium | 2013 | 25 | 106 | 62% |
POINT-DEFECTS AND DOPANT DIFFUSION IN SILICON | 1989 | 946 | 130 | 65% |
Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon | 1997 | 460 | 70 | 83% |
Fundamentals of silicon material properties for successful exploitation of strain engineering in modern CMOS manufacturing | 2006 | 83 | 109 | 40% |
Front-end process modeling in silicon | 2009 | 14 | 294 | 66% |
Boron diffusion in silicon: the anomalies and control by point defect engineering | 2003 | 43 | 160 | 74% |
Damage Formation and Evolution in Ion-Implanted Crystalline Si | 2010 | 8 | 74 | 64% |
A SYSTEMATIC ANALYSIS OF DEFECTS IN ION-IMPLANTED SILICON | 1988 | 323 | 51 | 55% |
Trends in semiconductor defect engineering at the nanoscale | 2010 | 10 | 204 | 35% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | SWAMP | 40 | 79% | 0.8% | 26 |
2 | ION IMPLANTAT GRP | 15 | 67% | 0.5% | 14 |
3 | IMETEM | 13 | 25% | 1.5% | 46 |
4 | MATIS | 9 | 17% | 1.5% | 45 |
5 | PARAMETR CONDUCT IMPLANT | 8 | 100% | 0.2% | 5 |
6 | E ELECT | 5 | 55% | 0.2% | 6 |
7 | FRONT END PROD | 4 | 75% | 0.1% | 3 |
8 | PETRO PHYS GRP | 4 | 75% | 0.1% | 3 |
9 | IMM SEZ CATANIA | 4 | 36% | 0.3% | 8 |
10 | IT COMPUTAT ELECT | 3 | 100% | 0.1% | 3 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000198171 | ULTRAVIOLET LIGHT DETECTORS//ORIENTATION OF MOLECULES//BORON CHEMICAL VAPOR DEPOSITION |
2 | 0.0000152347 | ELECT MAT DEVICES NANOSTRUCT//L DLTS//CNR IMM MATIS |
3 | 0.0000150898 | IBIEC//SOLID PHASE EPITAXIAL GROWTH//LATERAL SOLID PHASE EPITAXY |
4 | 0.0000108313 | RANGE PARAMETERS//SOFT ERROR MAPPING//HIGH ENERGY ION IMPLANTATION |
5 | 0.0000095276 | ION CUT//SURFACE BLISTERING//SMART CUT |
6 | 0.0000081780 | CLUSTER OF DEFECTS//GROUP II ELEMENTS//SI CD |
7 | 0.0000073050 | ELECTRONIC RADIATION//RUMENTAT MESU//CROSS SECTIONAL SEM |
8 | 0.0000071382 | FILM EDGE//SHAPE ENGINEERING//SILICON TECHNOLOGIES |
9 | 0.0000063922 | LIFETIME CONTROL//SEMI INSULATING MATERIALS//POWER DIODES |
10 | 0.0000055959 | AS IMPURITY//CONDUCTING POLYMER BLENDS//GROUND WATER TREATMENT |