Class information for:
Level 1: GAAS MOSFET//INTERFACE CONTROL LAYER//III V MOSFET

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
6651 1387 23.3 73%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
1376 7700 GALLIUM ARSENIDE//SULFUR PASSIVATION//INDIUM ARSENIDE

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 GAAS MOSFET Author keyword 21 75% 1% 15
2 INTERFACE CONTROL LAYER Author keyword 15 82% 1% 9
3 III V MOSFET Author keyword 10 58% 1% 11
4 GAAS MOS Author keyword 6 100% 0% 4
5 III V MOSFETS Author keyword 6 50% 1% 8
6 III V Author keyword 5 14% 3% 35
7 SI INTERFACE CONTROL LAYER Author keyword 5 63% 0% 5
8 INTER E QUANTUM ELECT Address 4 18% 2% 22
9 GAAS PASSIVATION Author keyword 4 75% 0% 3
10 UHV CONTACTLESS C V Author keyword 4 75% 0% 3

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class		 LCSH search Wikipedia search
1 GAAS MOSFET 21 75% 1% 15 Search GAAS+MOSFET Search GAAS+MOSFET
2 INTERFACE CONTROL LAYER 15 82% 1% 9 Search INTERFACE+CONTROL+LAYER Search INTERFACE+CONTROL+LAYER
3 III V MOSFET 10 58% 1% 11 Search III+V+MOSFET Search III+V+MOSFET
4 GAAS MOS 6 100% 0% 4 Search GAAS+MOS Search GAAS+MOS
5 III V MOSFETS 6 50% 1% 8 Search III+V+MOSFETS Search III+V+MOSFETS
6 III V 5 14% 3% 35 Search III+V Search III+V
7 SI INTERFACE CONTROL LAYER 5 63% 0% 5 Search SI+INTERFACE+CONTROL+LAYER Search SI+INTERFACE+CONTROL+LAYER
8 GAAS PASSIVATION 4 75% 0% 3 Search GAAS+PASSIVATION Search GAAS+PASSIVATION
9 UHV CONTACTLESS C V 4 75% 0% 3 Search UHV+CONTACTLESS+C+V Search UHV+CONTACTLESS+C+V
10 XOI 4 75% 0% 3 Search XOI Search XOI

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 GA2O3GD2O3 31 58% 3% 36
2 MODE INGAAS MOSFET 25 77% 1% 17
3 GA2O3 GAAS STRUCTURES 23 100% 1% 10
4 GAAS MOSFETS 20 59% 2% 22
5 INTERFACE CONTROL LAYER 19 74% 1% 14
6 GAAS MOSFET 17 70% 1% 14
7 INSULATOR SEMICONDUCTOR 15 38% 2% 31
8 SI INTERLAYER 11 100% 0% 6
9 INGAAS MOSFET 9 83% 0% 5
10 INTERFACE CONTROL LAYERS 9 83% 0% 5

Journals

Reviews


Title Publ. year Cit. Active references % act. ref.
to same field
Nanometre-scale electronics with III-V compound semiconductors 2011 304 50 62%
Interfacial chemistry of oxides on InxGa(1-x)As and implications for MOSFET applications 2011 54 155 66%
III-V/Ge channel MOS device technologies in nano CMOS era 2015 1 160 36%
Interface engineering and chemistry of Hf-based high-k dielectrics on III-V substrates 2013 12 203 41%
Atomic Layer Deposition of Dielectrics on Ge and III-V Materials for Ultrahigh Performance Transistors 2009 55 134 45%
Epitaxial growth and band alignment of (GdxLa1-x)(2)O-3 films on n-GaAs (001) 2009 0 15 40%
Carrier-transport-enhanced channel CMOS for improved power consumption and performance 2008 123 48 2%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 INTER E QUANTUM ELECT 4 18% 1.6% 22
2 SEMICOND SUR E PHYS 3 57% 0.3% 4
3 CSEA 3 22% 0.8% 11
4 MICROWAVE DEVICE IC 2 26% 0.4% 6
5 TSMC RD 1 100% 0.1% 2
6 ELECT ECE 1 12% 0.6% 9
7 ADV TRANSISTOR 1 40% 0.1% 2
8 RDRL SER E 1 40% 0.1% 2
9 IT RELATED CHEM 1 22% 0.3% 4
10 CHAIRE SIMULAT ECHELLE ATOM 1 33% 0.1% 2

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000212249 SULFUR PASSIVATION//PHOSPHIDIZATION//PHOSPHINE PLASMA
2 0.0000166732 NI GERMANIDE//MBE//GERMANIUM GE
3 0.0000154560 SEMICOND INTEGRATED CIRCUIT//SCI TECH FES SAIS//HIGFET
4 0.0000110429 ATOMIC HYDROGEN CLEANING//ECR HYDROGEN PLASMA//IN SITU VACUUM PROCESS
5 0.0000089673 INDIUM PHOSPHIDE100//INTERACTION IONS MATTER//SIMULATION METHOD TRIM
6 0.0000077614 ELECTRON COUNTING MODEL//SUR E STUDY//GA ADATOM
7 0.0000072688 HFO2//HIGH K//METAL GATE
8 0.0000067109 IN082GA018AS//SHORT WAVELENGTH INFRARED//INFRARED IMAGING MAT DETECTORS
9 0.0000065740 NANOMETER SIZED SCHOTTKY CONTACT//METAL DOT ARRAY//NANO DIODE
10 0.0000056160 NETWORK COMPUTAT NANOTECHNOL//QUASI BALLISTIC TRANSPORT//JOURNAL OF COMPUTATIONAL ELECTRONICS