Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
6549 | 1402 | 20.8 | 83% |
Classes in level above (level 2) |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | SEMICONDUCTING ALUMINUM COMPOUNDS | Author keyword | 26 | 51% | 3% | 37 |
2 | CERAM OPERAT | Address | 17 | 100% | 1% | 8 |
3 | ALGAN | Author keyword | 12 | 11% | 7% | 102 |
4 | UV CRAFTORY CO LTD | Address | 8 | 100% | 0% | 5 |
5 | HT MOVPE | Author keyword | 6 | 100% | 0% | 4 |
6 | GRP HALBLEITERPHYS | Address | 5 | 38% | 1% | 10 |
7 | GROWTH FROM VAPOR | Author keyword | 4 | 11% | 3% | 38 |
8 | BULK ALN | Author keyword | 4 | 75% | 0% | 3 |
9 | PULSED ATOMIC LAYER EPITAXY | Author keyword | 4 | 75% | 0% | 3 |
10 | MAT SCI 6 | Address | 4 | 15% | 2% | 22 |
Web of Science journal categories |
Author Key Words |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | ALGAN ALLOYS | 40 | 69% | 2% | 34 |
2 | ALGAN | 35 | 24% | 9% | 130 |
3 | BULK ALN | 25 | 55% | 2% | 31 |
4 | NM ALGAN | 23 | 86% | 1% | 12 |
5 | ALXGA1 XN | 20 | 24% | 5% | 75 |
6 | SI DOPED ALN | 20 | 62% | 1% | 21 |
7 | 285 NM | 18 | 83% | 1% | 10 |
8 | BULK ALUMINUM NITRIDE | 14 | 100% | 0% | 7 |
9 | ALUMINUM NITRIDE CRYSTALS | 12 | 86% | 0% | 6 |
10 | THICK ALN LAYERS | 12 | 86% | 0% | 6 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
Ultraviolet light-emitting diodes based on group three nitrides | 2008 | 246 | 78 | 55% |
Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes | 2005 | 190 | 80 | 61% |
III-nitride UV devices | 2005 | 242 | 189 | 44% |
ULTRAVIOLET LIGHT EMITTING DIODES | 2011 | 5 | 89 | 43% |
A Comparative Study of Thermal Metrology Techniques for Ultraviolet Light Emitting Diodes | 2013 | 0 | 18 | 50% |
White Light Emission from Microwave Synthesized Spin Coated Gd2O3:Dy:Tb Nano Phosphors | 2012 | 0 | 16 | 25% |
Carrier dynamics in III-nitrides studied by time-resolved photoluminescence | 2004 | 0 | 77 | 17% |
III-V nitrides - important future electronic materials | 1999 | 88 | 116 | 2% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | CERAM OPERAT | 17 | 100% | 0.6% | 8 |
2 | UV CRAFTORY CO LTD | 8 | 100% | 0.4% | 5 |
3 | GRP HALBLEITERPHYS | 5 | 38% | 0.7% | 10 |
4 | MAT SCI 6 | 4 | 15% | 1.6% | 22 |
5 | NANOSCI DEV SUPPORT TEAM | 3 | 45% | 0.4% | 5 |
6 | ECE CIE | 3 | 38% | 0.4% | 6 |
7 | QUANTENMATERIE | 3 | 24% | 0.6% | 9 |
8 | EL SEED CORP | 2 | 67% | 0.1% | 2 |
9 | AKASAKI | 2 | 13% | 0.9% | 12 |
10 | SGX | 1 | 38% | 0.2% | 3 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000153522 | GAN//HYDRIDE VAPOR PHASE EPITAXY//AMMONOTHERMAL CRYSTAL GROWTH |
2 | 0.0000143364 | INGAN//EFFICIENCY DROOP//ELECTRON BLOCKING LAYER EBL |
3 | 0.0000134732 | SI111 SUBSTRATES//SI111 SUBSTRATE//ALN BUFFER |
4 | 0.0000118419 | OBNINSK BRANCH FED STATE UNITARY ENTERPRISE//YELLOW LUMINESCENCE//MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH |
5 | 0.0000114852 | METAL SEMICONDUCTOR METAL MSM//ULTRAVIOLET UV DETECTOR//PHOTODETECTORS PDS |
6 | 0.0000111552 | A PLANE GAN//LED TECHNOL//NONPOLAR |
7 | 0.0000108844 | GAN SURFACES//INTERDISCIPLINARY MODELLING//INTERDISCIPLINARY MAT MODELLING |
8 | 0.0000105416 | EPITAXIAL SEMICOND GRP//EXP SOLID STATE PHYS 3//RECIPROCAL SPACE ANALYSIS |
9 | 0.0000103976 | AL1 XINXN//ALINN//RESONANT CAVITY LIGHT EMITTING DIODE RCLED |
10 | 0.0000088681 | ALUMINUM NITRIDE//FILM BULK ACOUSTIC RESONATOR//ALUMINIUM NITRIDE |