Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
6423 | 1420 | 23.6 | 64% |
Classes in level above (level 2) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
138 | 22619 | IEEE TRANSACTIONS ON ELECTRON DEVICES//IEEE ELECTRON DEVICE LETTERS//SOLID-STATE ELECTRONICS |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | NETWORK COMPUTAT NANOTECHNOL | Address | 24 | 33% | 4% | 60 |
2 | QUASI BALLISTIC TRANSPORT | Author keyword | 21 | 59% | 2% | 24 |
3 | JOURNAL OF COMPUTATIONAL ELECTRONICS | Journal | 18 | 14% | 8% | 120 |
4 | BALLISTIC TRANSPORT | Author keyword | 17 | 16% | 7% | 95 |
5 | ELECT TECNOL COMP | Address | 17 | 27% | 4% | 53 |
6 | TIGHT BINDING TB | Author keyword | 12 | 75% | 1% | 9 |
7 | SP3D5S | Author keyword | 12 | 86% | 0% | 6 |
8 | MULTI SUBBAND | Author keyword | 9 | 83% | 0% | 5 |
9 | LOW FIELD MOBILITY | Author keyword | 9 | 42% | 1% | 16 |
10 | QUANTUM TRANSPORT | Author keyword | 8 | 11% | 5% | 71 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | QUASI BALLISTIC TRANSPORT | 21 | 59% | 2% | 24 | Search QUASI+BALLISTIC+TRANSPORT | Search QUASI+BALLISTIC+TRANSPORT |
2 | BALLISTIC TRANSPORT | 17 | 16% | 7% | 95 | Search BALLISTIC+TRANSPORT | Search BALLISTIC+TRANSPORT |
3 | TIGHT BINDING TB | 12 | 75% | 1% | 9 | Search TIGHT+BINDING+TB | Search TIGHT+BINDING+TB |
4 | SP3D5S | 12 | 86% | 0% | 6 | Search SP3D5S | Search SP3D5S |
5 | MULTI SUBBAND | 9 | 83% | 0% | 5 | Search MULTI+SUBBAND | Search MULTI+SUBBAND |
6 | LOW FIELD MOBILITY | 9 | 42% | 1% | 16 | Search LOW+FIELD+MOBILITY | Search LOW+FIELD+MOBILITY |
7 | QUANTUM TRANSPORT | 8 | 11% | 5% | 71 | Search QUANTUM+TRANSPORT | Search QUANTUM+TRANSPORT |
8 | NEGF | 7 | 22% | 2% | 27 | Search NEGF | Search NEGF |
9 | CHANNEL BACKSCATTERING | 6 | 100% | 0% | 4 | Search CHANNEL+BACKSCATTERING | Search CHANNEL+BACKSCATTERING |
10 | NEGF SIMULATIONS | 6 | 100% | 0% | 4 | Search NEGF+SIMULATIONS | Search NEGF+SIMULATIONS |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | NANOTRANSISTORS | 40 | 66% | 3% | 37 |
2 | QUASI BALLISTIC TRANSPORT | 26 | 58% | 2% | 30 |
3 | SMALL SI DEVICES | 22 | 81% | 1% | 13 |
4 | NANOSCALE MOSFETS | 21 | 50% | 2% | 30 |
5 | LIMITED MOBILITY | 18 | 41% | 2% | 34 |
6 | INVERSION LAYER MOBILITY | 15 | 27% | 3% | 48 |
7 | INSULATOR INVERSION LAYERS | 14 | 65% | 1% | 13 |
8 | NANO MOSFETS | 13 | 39% | 2% | 26 |
9 | SI MOSFETS | 12 | 22% | 3% | 47 |
10 | ELECTRON MOBILITY | 12 | 11% | 7% | 96 |
Journals |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | JOURNAL OF COMPUTATIONAL ELECTRONICS | 18 | 14% | 8% | 120 |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
Atomistic simulation of transport phenomena in nanoelectronic devices | 2014 | 2 | 34 | 32% |
Ballistic Quantum Simulators for Studying Variability in Nanotransistors | 2008 | 4 | 15 | 67% |
Atomistic simulation of nanowire transistors | 2008 | 7 | 44 | 45% |
Diffusive Transport in Quasi-2D and Quasi-1D Electron Systems | 2009 | 8 | 75 | 32% |
Atomistic theory of transport in organic and inorganic nanostructures | 2004 | 173 | 283 | 7% |
Quantum-corrected Monte Carlo simulation of double gate silicon on insulator transistors | 2008 | 0 | 14 | 43% |
Semiconductor device modeling | 2008 | 8 | 84 | 23% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | NETWORK COMPUTAT NANOTECHNOL | 24 | 33% | 4.2% | 60 |
2 | ELECT TECNOL COMP | 17 | 27% | 3.7% | 53 |
3 | ELECT TECNOL COMPUTADO | 5 | 36% | 0.8% | 12 |
4 | DIEGM | 4 | 12% | 2.1% | 30 |
5 | ELECT DEIS | 3 | 50% | 0.4% | 5 |
6 | NANOSCI CRYOGEN INAC | 3 | 100% | 0.2% | 3 |
7 | EIT4 | 3 | 45% | 0.4% | 5 |
8 | PAUL ALLEN INTEGRATED SYST | 3 | 60% | 0.2% | 3 |
9 | INTEGRIERTE SYST | 3 | 29% | 0.6% | 8 |
10 | IU NET | 2 | 26% | 0.6% | 8 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000206323 | BALLISTIC MOBILITY//HIGH ELECTRIC FIELD TRANSPORT//TRANSIT TIME DELAY |
2 | 0.0000188009 | DOUBLE GATE MOSFET//FINFET//SHORT CHANNEL EFFECTS |
3 | 0.0000173656 | DIRECT TUNNELING//QUANTUM MECHANICAL EFFECTS QMES//WAVE FUNCTION PENETRATION |
4 | 0.0000159081 | DEVICE MODELLING GRP//RANDOM DOPANT//DEVICE MODELING GRP |
5 | 0.0000139830 | SCHOTTKY BARRIER SB//DOPANT SEGREGATION DS//SCHOTTKY BARRIER SB MOSFET |
6 | 0.0000130810 | STRAINED SI//SIGE//STRAINED SILICON |
7 | 0.0000108842 | QUANTUM DRIFT DIFFUSION MODEL//QUANTUM DRIFT DIFFUSION//WIGNER EQUATION |
8 | 0.0000096684 | TUNNELING FIELD EFFECT TRANSISTOR TFET//TUNNEL FIELD EFFECT TRANSISTOR TFET//TUNNEL FET TFET |
9 | 0.0000093346 | CRYOGENIC CMOS//LOW TEMPERATURE ELECTRONICS//LOW TEMPERATURE CIRCUIT |
10 | 0.0000084949 | ENERGY TRANSPORT MODEL//HYDRODYNAMICAL MODELS//BOLTZMANN POISSON SYSTEM |