Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
6404 | 1423 | 17.9 | 71% |
Classes in level above (level 2) |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | QUANTUM WELL INTERMIXING | Author keyword | 28 | 37% | 4% | 61 |
2 | QUANTUM WELL INTERDIFFUSION | Author keyword | 10 | 73% | 1% | 8 |
3 | IMPURITY FREE DISORDERING | Author keyword | 9 | 83% | 0% | 5 |
4 | QUANTUM WELL INTERMIXING QWI | Author keyword | 5 | 35% | 1% | 12 |
5 | IMPURITY FREE VACANCY DISORDERING | Author keyword | 5 | 50% | 0% | 7 |
6 | IMPURITY FREE VACANCY DIFFUSION IFVD | Author keyword | 4 | 75% | 0% | 3 |
7 | QUANTUM WELL DISORDERING | Author keyword | 4 | 44% | 0% | 7 |
8 | UP EA 2654 | Address | 3 | 50% | 0% | 4 |
9 | DIFFUSED QUANTUM WELL | Author keyword | 3 | 60% | 0% | 3 |
10 | ELE OPHOTON MAT DEVICES | Address | 3 | 18% | 1% | 13 |
Web of Science journal categories |
Author Key Words |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | ZN DIFFUSION | 42 | 51% | 4% | 59 |
2 | GAAS SUPER LATTICE | 23 | 76% | 1% | 16 |
3 | ALAS GAAS SUPERLATTICE | 18 | 89% | 1% | 8 |
4 | FREE VACANCY DIFFUSION | 16 | 58% | 1% | 18 |
5 | ENHANCED INTERDIFFUSION | 14 | 100% | 0% | 7 |
6 | BANDGAP SHIFTS | 12 | 86% | 0% | 6 |
7 | GALLIUM SELF DIFFUSION | 12 | 86% | 0% | 6 |
8 | FREE INTERDIFFUSION | 9 | 83% | 0% | 5 |
9 | INGAAS INP SUPERLATTICE | 8 | 100% | 0% | 5 |
10 | SILICON DIFFUSION | 8 | 48% | 1% | 12 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
POINT-DEFECTS, DIFFUSION MECHANISMS, AND SUPERLATTICE DISORDERING IN GALLIUM ARSENIDE-BASED MATERIALS | 1991 | 115 | 54 | 80% |
ATOM DIFFUSION AND IMPURITY-INDUCED LAYER DISORDERING IN QUANTUM WELL III-V SEMICONDUCTOR HETEROSTRUCTURES | 1988 | 313 | 113 | 93% |
Point defects and diffusion in thin films of GaAs | 1997 | 45 | 77 | 70% |
Argon plasma induced photoluminescence enhancement and quantum well intermixing of InGaAs/InGaAlAs multiple quantum wells | 2009 | 1 | 8 | 88% |
IMPURITY-INDUCED DISORDERING IN III-V MULTIQUANTUM WELLS AND SUPERLATTICES | 1993 | 18 | 151 | 83% |
Red-shift in the InGaAsP/GaInP active region using impurity free vacancy diffusion induced quantum well intermixing | 2015 | 0 | 13 | 69% |
POINT-DEFECTS AND DIFFUSION MECHANISMS PERTINENT TO THE GA SUBLATTICE OF GAAS | 1995 | 6 | 25 | 80% |
Transient diffusion of beryllium and silicon in gallium arsenide | 1998 | 1 | 45 | 29% |
Applications of isotope effects in solids | 2003 | 1 | 103 | 20% |
MECHANISMS OF ATOMIC DIFFUSION IN THE III-V SEMICONDUCTORS | 1985 | 40 | 32 | 41% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | UP EA 2654 | 3 | 50% | 0.3% | 4 |
2 | ELE OPHOTON MAT DEVICES | 3 | 18% | 0.9% | 13 |
3 | ELE OPHOTON MAT DEV | 2 | 67% | 0.1% | 2 |
4 | LEMI | 2 | 17% | 0.8% | 12 |
5 | MET FOR | 2 | 12% | 1.1% | 15 |
6 | QUANTUM SEMICOND PHOTON BASED BIONANOTECHNO | 2 | 31% | 0.4% | 5 |
7 | EXCELLENCE INFORMAT ENGN | 2 | 43% | 0.2% | 3 |
8 | RECH PROPRIETES ELECT MAT AVANCES | 2 | 16% | 0.6% | 9 |
9 | ELECT MAT ENGN PHYS SCI | 1 | 100% | 0.1% | 2 |
10 | UP EA 2654 CNRS | 1 | 100% | 0.1% | 2 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000266220 | LUMILEDS LIGHTING//ZINC DIFFUSION//ACCEPTOR DIFFUSION |
2 | 0.0000132141 | MEV ION IMPLANTATION//ACTIVATION EFFICIENCY//COLD IMPLANTS |
3 | 0.0000092185 | CARBON DOPING//CBR4//C DOPED GAAS |
4 | 0.0000091732 | MEMBRANE LASER//DISTRIBUTED REFLECTOR DR LASER//QUANTUM NANOELECT |
5 | 0.0000087339 | ELECTROABSORPTION MODULATORS//ELECTROABSORPTION//ELECTROABSORPTION MODULATOR |
6 | 0.0000077221 | LOCAL VIBRATION MODES//DIRECT FAST SCARLET 4BS//GAAS C |
7 | 0.0000058126 | INASP INP//INASP//QUANTUM PHOTOVOLTA GRP |
8 | 0.0000055071 | SUPERLUMINESCENT DIODE//SUPERLUMINESCENT DIODES//SUPERLUMINESCENT DIODES SLDS |
9 | 0.0000051536 | CATASTROPHIC OPTICAL DEGRADATION//THYRISTOR HETEROSTRUCTURE//OPTOELECT TECHNOL DEV |
10 | 0.0000051108 | FRONTIER ENGN//BRAGG REFLECTION WAVEGUIDES BRWS//ISOTROPIC SEMICONDUCTORS |