Class information for: |
Basic class information |
| ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
|---|---|---|---|
| 6403 | 1423 | 17.9 | 74% |
Classes in level above (level 2) |
Terms with highest relevance score |
| Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|---|
| 1 | REFLECTION MASS SPECTROMETRY | Author keyword | 3 | 60% | 0% | 3 |
| 2 | 2D ISLAND | Author keyword | 2 | 67% | 0% | 2 |
| 3 | INTERFACE DISORDER | Author keyword | 1 | 38% | 0% | 3 |
| 4 | PHYSISORBED MOLECULES | Author keyword | 1 | 50% | 0% | 2 |
| 5 | SCI CORE TECHNOL S | Address | 1 | 50% | 0% | 2 |
| 6 | RHEED OSCILLATION | Author keyword | 1 | 20% | 0% | 4 |
| 7 | DESORPTION MASS SPECTROMETRY | Author keyword | 1 | 33% | 0% | 2 |
| 8 | GROWTH INTERRUPTION | Author keyword | 1 | 11% | 0% | 6 |
| 9 | AL GAAS | Author keyword | 1 | 50% | 0% | 1 |
| 10 | ALGAAS ALLOY | Author keyword | 1 | 50% | 0% | 1 |
Web of Science journal categories |
Author Key Words |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
|---|---|---|---|---|---|---|---|
| 1 | REFLECTION MASS SPECTROMETRY | 3 | 60% | 0% | 3 | Search REFLECTION+MASS+SPECTROMETRY | Search REFLECTION+MASS+SPECTROMETRY |
| 2 | 2D ISLAND | 2 | 67% | 0% | 2 | Search 2D+ISLAND | Search 2D+ISLAND |
| 3 | INTERFACE DISORDER | 1 | 38% | 0% | 3 | Search INTERFACE+DISORDER | Search INTERFACE+DISORDER |
| 4 | PHYSISORBED MOLECULES | 1 | 50% | 0% | 2 | Search PHYSISORBED+MOLECULES | Search PHYSISORBED+MOLECULES |
| 5 | RHEED OSCILLATION | 1 | 20% | 0% | 4 | Search RHEED+OSCILLATION | Search RHEED+OSCILLATION |
| 6 | DESORPTION MASS SPECTROMETRY | 1 | 33% | 0% | 2 | Search DESORPTION+MASS+SPECTROMETRY | Search DESORPTION+MASS+SPECTROMETRY |
| 7 | GROWTH INTERRUPTION | 1 | 11% | 0% | 6 | Search GROWTH+INTERRUPTION | Search GROWTH+INTERRUPTION |
| 8 | AL GAAS | 1 | 50% | 0% | 1 | Search AL+GAAS | Search AL+GAAS |
| 9 | ALGAAS ALLOY | 1 | 50% | 0% | 1 | Search ALGAAS+ALLOY | Search ALGAAS+ALLOY |
| 10 | DOUBLE CRYSTAL X RAY ROCKING CURVE | 1 | 50% | 0% | 1 | Search DOUBLE+CRYSTAL+X+RAY+ROCKING+CURVE | Search DOUBLE+CRYSTAL+X+RAY+ROCKING+CURVE |
Key Words Plus |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | INTENSITY OSCILLATIONS | 11 | 22% | 3% | 45 |
| 2 | GROWTH ISLANDS | 11 | 69% | 1% | 9 |
| 3 | MONOLAYER FLAT ISLANDS | 9 | 83% | 0% | 5 |
| 4 | RHEED OBSERVATIONS | 9 | 42% | 1% | 16 |
| 5 | MBE GROWTH | 8 | 11% | 5% | 69 |
| 6 | HETEROINTERFACES | 6 | 22% | 2% | 24 |
| 7 | GAAS SINGLE | 6 | 100% | 0% | 4 |
| 8 | INVERTED INTERFACES | 6 | 100% | 0% | 4 |
| 9 | RHEED OSCILLATIONS | 6 | 50% | 1% | 8 |
| 10 | VICINAL GAAS001 SURFACES | 5 | 63% | 0% | 5 |
Journals |
Reviews |
| Title | Publ. year | Cit. | Active references | % act. ref. to same field |
|---|---|---|---|---|
| Use of excitons in materials characterization of semiconductor system | 2001 | 32 | 61 | 43% |
| HETEROINTERFACES IN QUANTUM-WELLS AND EPITAXIAL-GROWTH PROCESSES - EVALUATION BY LUMINESCENCE TECHNIQUES | 1991 | 238 | 233 | 44% |
| THE NATURE OF MOLECULAR-BEAM EPITAXIAL-GROWTH EXAMINED VIA COMPUTER-SIMULATIONS | 1988 | 133 | 53 | 66% |
| MONTE-CARLO SIMULATION OF THIN-FILM GROWTH ON SI SURFACES | 1993 | 21 | 28 | 57% |
| Elementary precesses in molecular beam epitaxy studied by in situ scanning electron microscopy | 1998 | 2 | 35 | 69% |
| CONTRIBUTION OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION TO NANOMETER TAILORING OF SURFACES AND INTERFACES BY MOLECULAR-BEAM EPITAXY | 1994 | 13 | 75 | 41% |
| Plausible quantum-mechanical interpretations of RHEED oscillation | 2012 | 0 | 10 | 50% |
| Developments in the use of RHEED for interpreting growth processes in the MBE of wide gap II-VI semiconductors | 1998 | 5 | 31 | 35% |
| MOLECULAR-BEAM EPITAXY OF SEMICONDUCTOR-FILMS ATOMIC DIMENSION CONTROL AND THE EVALUATION OF CRYSTAL-GROWTH DYNAMICS | 1991 | 9 | 24 | 46% |
| Monte Carlo simulation of transitions related to growth on (001) faces of Si and Ge | 1995 | 1 | 17 | 41% |
Address terms |
| Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | SCI CORE TECHNOL S | 1 | 50% | 0.1% | 2 |
| 2 | INTELLIGENT MFG SEMICOND | 1 | 50% | 0.1% | 1 |
| 3 | MLPOMAT MFG DIRECTORATE | 1 | 50% | 0.1% | 1 |
| 4 | ORNL FUNCT IMAGING MAT | 1 | 50% | 0.1% | 1 |
| 5 | SUSTAINABLE SOC STUDIES | 1 | 50% | 0.1% | 1 |
| 6 | MAT CONDENSEE | 0 | 11% | 0.2% | 3 |
| 7 | EUROPEAN NON LINEAR SPE OSCOPY | 0 | 25% | 0.1% | 1 |
| 8 | QUANTUM WAVE PROJECT | 0 | 25% | 0.1% | 1 |
| 9 | UPR CNRS 20 | 0 | 25% | 0.1% | 1 |
| 10 | CNRSUP A 7014 | 0 | 20% | 0.1% | 1 |
Related classes at same level (level 1) |
| Rank | Relatedness score | Related classes |
|---|---|---|
| 1 | 0.0000253497 | FAK PHYS CHEM//INDIUM SEGREGATION//IN DESORPTION |
| 2 | 0.0000217538 | REFINED BEAM UNIT//SI111ROOT 3 X ROOT 3 AL//REFLECTION ELECTRON MICROSCOPY REM |
| 3 | 0.0000176781 | HIGH RESOLUTION LOW ENERGY ELECTRON DIFFRACTION//GAAS GAP//SURFACE RESONANCES |
| 4 | 0.0000169595 | ELECTRON COUNTING MODEL//SUR E STUDY//GA ADATOM |
| 5 | 0.0000129854 | OVAL DEFECTS//SEEIE//GA AS BI SOLUTION |
| 6 | 0.0000126236 | INALAS INP//INALAS ALLOYS//INALAS ALASSB |
| 7 | 0.0000110870 | INASP INP//INASP//QUANTUM PHOTOVOLTA GRP |
| 8 | 0.0000100746 | QUANTUM WIRE LASERS//QUANTUM WIRE LASER//QUANTUM WIRE |
| 9 | 0.0000098948 | PHOTON RECYCLING//SEMICONDUCTOR SCINTILLATORS//FSF |
| 10 | 0.0000092708 | LATERAL P N JUNCTION//411A GAAS SUBSTRATES//411A |