Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
6382 | 1427 | 22.1 | 87% |
Classes in level above (level 2) |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | A PLANE GAN | Author keyword | 33 | 71% | 2% | 27 |
2 | LED TECHNOL | Address | 31 | 76% | 2% | 22 |
3 | NONPOLAR | Author keyword | 27 | 38% | 4% | 57 |
4 | SEMIPOLAR | Author keyword | 27 | 49% | 3% | 39 |
5 | NON POLAR GAN | Author keyword | 17 | 70% | 1% | 14 |
6 | UCSB GRP | Address | 16 | 54% | 1% | 20 |
7 | NANOOPT ENGN | Address | 15 | 33% | 3% | 39 |
8 | GAN BULK SUBSTRATE | Author keyword | 14 | 100% | 0% | 7 |
9 | SOLID STATE LIGHTING DISPLAY | Address | 14 | 100% | 0% | 7 |
10 | NONPOLAR GAN | Author keyword | 12 | 63% | 1% | 12 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | A PLANE GAN | 33 | 71% | 2% | 27 | Search A+PLANE+GAN | Search A+PLANE+GAN |
2 | NONPOLAR | 27 | 38% | 4% | 57 | Search NONPOLAR | Search NONPOLAR |
3 | SEMIPOLAR | 27 | 49% | 3% | 39 | Search SEMIPOLAR | Search SEMIPOLAR |
4 | NON POLAR GAN | 17 | 70% | 1% | 14 | Search NON+POLAR+GAN | Search NON+POLAR+GAN |
5 | GAN BULK SUBSTRATE | 14 | 100% | 0% | 7 | Search GAN+BULK+SUBSTRATE | Search GAN+BULK+SUBSTRATE |
6 | NONPOLAR GAN | 12 | 63% | 1% | 12 | Search NONPOLAR+GAN | Search NONPOLAR+GAN |
7 | M PLANE | 11 | 47% | 1% | 17 | Search M+PLANE | Search M+PLANE |
8 | R PLANE SAPPHIRE | 10 | 54% | 1% | 13 | Search R+PLANE+SAPPHIRE | Search R+PLANE+SAPPHIRE |
9 | A PLANE | 9 | 43% | 1% | 17 | Search A+PLANE | Search A+PLANE |
10 | SEMIPOLAR GAN | 9 | 48% | 1% | 14 | Search SEMIPOLAR+GAN | Search SEMIPOLAR+GAN |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | A PLANE GAN | 68 | 62% | 5% | 71 |
2 | NITRIDE SEMICONDUCTORS FREE | 44 | 88% | 1% | 21 |
3 | GAN11OVER BAR 00 | 38 | 89% | 1% | 17 |
4 | GALLIUM NITRIDE FILMS | 36 | 60% | 3% | 40 |
5 | SEMIPOLAR | 33 | 77% | 2% | 23 |
6 | GAMMA LIALO2 | 28 | 57% | 2% | 33 |
7 | BULK GAN SUBSTRATE | 24 | 91% | 1% | 10 |
8 | GAMMA LIALO2100 | 23 | 76% | 1% | 16 |
9 | M PLANE GAN11OVER BAR 00 | 18 | 67% | 1% | 16 |
10 | PLANE GALLIUM NITRIDE | 18 | 89% | 1% | 8 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
Semipolar GaN grown on foreign substrates: a review | 2012 | 43 | 132 | 82% |
Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges | 2010 | 89 | 98 | 63% |
Recent Advances in Nonpolar and Semipolar InGaN Light-Emitting Diodes (LEDs) | 2015 | 1 | 108 | 56% |
Development and prospects of nitride materials and devices with nonpolar surfaces | 2008 | 61 | 109 | 76% |
Group III-nitride lasers: a materials perspective | 2011 | 20 | 87 | 54% |
Luminescence associated with stacking faults in GaN | 2014 | 3 | 84 | 43% |
Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy | 2014 | 2 | 67 | 46% |
Nonpolar a-plane GaN grown on r-plane sapphire using multilayer AlN buffer by metalorganic chemical vapor deposition | 2011 | 11 | 13 | 46% |
Growth and Optical Properties of GaN-Based Non- and Semipolar LEDs | 2013 | 0 | 102 | 68% |
Electron beam-induced oxygen desorption in gamma-LiAlO2 | 2010 | 3 | 16 | 56% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | LED TECHNOL | 31 | 76% | 1.5% | 22 |
2 | UCSB GRP | 16 | 54% | 1.4% | 20 |
3 | NANOOPT ENGN | 15 | 33% | 2.7% | 39 |
4 | SOLID STATE LIGHTING DISPLAY | 14 | 100% | 0.5% | 7 |
5 | NICP | 11 | 40% | 1.5% | 22 |
6 | SEMICOND TECHNOL RD S | 6 | 37% | 0.9% | 13 |
7 | JSTUCSB GRP | 6 | 100% | 0.3% | 4 |
8 | AKASAKI | 5 | 22% | 1.5% | 21 |
9 | NITRIDE SEMICOND | 5 | 22% | 1.3% | 19 |
10 | USHI KU | 5 | 32% | 0.8% | 12 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000198907 | INGAN//EFFICIENCY DROOP//ELECTRON BLOCKING LAYER EBL |
2 | 0.0000179173 | GAASSB//PHOTON INFORMAT ENGN//NON MARKOVIAN GAIN MODEL |
3 | 0.0000158407 | GAN SURFACES//INTERDISCIPLINARY MODELLING//INTERDISCIPLINARY MAT MODELLING |
4 | 0.0000148053 | GAN//HYDRIDE VAPOR PHASE EPITAXY//AMMONOTHERMAL CRYSTAL GROWTH |
5 | 0.0000139034 | EPITAXIAL SEMICOND GRP//EXP SOLID STATE PHYS 3//RECIPROCAL SPACE ANALYSIS |
6 | 0.0000134699 | SPMM//PHOTON MULTISCALE NANOMAT//BUILT IN FIELDS |
7 | 0.0000124654 | LIGAO2//AMORPHOUS GAN//NON POLAR NITRIDES |
8 | 0.0000111552 | SEMICONDUCTING ALUMINUM COMPOUNDS//CERAM OPERAT//ALGAN |
9 | 0.0000095552 | SI111 SUBSTRATES//SI111 SUBSTRATE//ALN BUFFER |
10 | 0.0000082658 | GAN NANOWIRES//AMMONIATING//GAN NANORODS |