Class information for:
Level 1: A PLANE GAN//LED TECHNOL//NONPOLAR

Basic class information

ID Publications Average number
of references
Avg. shr. active
ref. in WoS
6382 1427 22.1 87%



Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)



ID, lev.
above
Publications Label for level above
33 32935 GAN//NITRIDES//GALLIUM NITRIDE

Terms with highest relevance score



Rank Term Type of term Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ. in
class
1 A PLANE GAN Author keyword 33 71% 2% 27
2 LED TECHNOL Address 31 76% 2% 22
3 NONPOLAR Author keyword 27 38% 4% 57
4 SEMIPOLAR Author keyword 27 49% 3% 39
5 NON POLAR GAN Author keyword 17 70% 1% 14
6 UCSB GRP Address 16 54% 1% 20
7 NANOOPT ENGN Address 15 33% 3% 39
8 GAN BULK SUBSTRATE Author keyword 14 100% 0% 7
9 SOLID STATE LIGHTING DISPLAY Address 14 100% 0% 7
10 NONPOLAR GAN Author keyword 12 63% 1% 12

Web of Science journal categories

Author Key Words



Rank Web of Science journal category Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ. in
class
LCSH search Wikipedia search
1 A PLANE GAN 33 71% 2% 27 Search A+PLANE+GAN Search A+PLANE+GAN
2 NONPOLAR 27 38% 4% 57 Search NONPOLAR Search NONPOLAR
3 SEMIPOLAR 27 49% 3% 39 Search SEMIPOLAR Search SEMIPOLAR
4 NON POLAR GAN 17 70% 1% 14 Search NON+POLAR+GAN Search NON+POLAR+GAN
5 GAN BULK SUBSTRATE 14 100% 0% 7 Search GAN+BULK+SUBSTRATE Search GAN+BULK+SUBSTRATE
6 NONPOLAR GAN 12 63% 1% 12 Search NONPOLAR+GAN Search NONPOLAR+GAN
7 M PLANE 11 47% 1% 17 Search M+PLANE Search M+PLANE
8 R PLANE SAPPHIRE 10 54% 1% 13 Search R+PLANE+SAPPHIRE Search R+PLANE+SAPPHIRE
9 A PLANE 9 43% 1% 17 Search A+PLANE Search A+PLANE
10 SEMIPOLAR GAN 9 48% 1% 14 Search SEMIPOLAR+GAN Search SEMIPOLAR+GAN

Key Words Plus



Rank Web of Science journal category Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ. in
class
1 A PLANE GAN 68 62% 5% 71
2 NITRIDE SEMICONDUCTORS FREE 44 88% 1% 21
3 GAN11OVER BAR 00 38 89% 1% 17
4 GALLIUM NITRIDE FILMS 36 60% 3% 40
5 SEMIPOLAR 33 77% 2% 23
6 GAMMA LIALO2 28 57% 2% 33
7 BULK GAN SUBSTRATE 24 91% 1% 10
8 GAMMA LIALO2100 23 76% 1% 16
9 M PLANE GAN11OVER BAR 00 18 67% 1% 16
10 PLANE GALLIUM NITRIDE 18 89% 1% 8

Journals

Reviews



Title Publ. year Cit. Active references % act. ref.
to same field
Semipolar GaN grown on foreign substrates: a review 2012 43 132 82%
Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges 2010 89 98 63%
Recent Advances in Nonpolar and Semipolar InGaN Light-Emitting Diodes (LEDs) 2015 1 108 56%
Development and prospects of nitride materials and devices with nonpolar surfaces 2008 61 109 76%
Group III-nitride lasers: a materials perspective 2011 20 87 54%
Luminescence associated with stacking faults in GaN 2014 3 84 43%
Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy 2014 2 67 46%
Nonpolar a-plane GaN grown on r-plane sapphire using multilayer AlN buffer by metalorganic chemical vapor deposition 2011 11 13 46%
Growth and Optical Properties of GaN-Based Non- and Semipolar LEDs 2013 0 102 68%
Electron beam-induced oxygen desorption in gamma-LiAlO2 2010 3 16 56%

Address terms



Rank Address term Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ. in
class
1 LED TECHNOL 31 76% 1.5% 22
2 UCSB GRP 16 54% 1.4% 20
3 NANOOPT ENGN 15 33% 2.7% 39
4 SOLID STATE LIGHTING DISPLAY 14 100% 0.5% 7
5 NICP 11 40% 1.5% 22
6 SEMICOND TECHNOL RD S 6 37% 0.9% 13
7 JSTUCSB GRP 6 100% 0.3% 4
8 AKASAKI 5 22% 1.5% 21
9 NITRIDE SEMICOND 5 22% 1.3% 19
10 USHI KU 5 32% 0.8% 12

Related classes at same level (level 1)



Rank Relatedness score Related classes
1 0.0000198907 INGAN//EFFICIENCY DROOP//ELECTRON BLOCKING LAYER EBL
2 0.0000179173 GAASSB//PHOTON INFORMAT ENGN//NON MARKOVIAN GAIN MODEL
3 0.0000158407 GAN SURFACES//INTERDISCIPLINARY MODELLING//INTERDISCIPLINARY MAT MODELLING
4 0.0000148053 GAN//HYDRIDE VAPOR PHASE EPITAXY//AMMONOTHERMAL CRYSTAL GROWTH
5 0.0000139034 EPITAXIAL SEMICOND GRP//EXP SOLID STATE PHYS 3//RECIPROCAL SPACE ANALYSIS
6 0.0000134699 SPMM//PHOTON MULTISCALE NANOMAT//BUILT IN FIELDS
7 0.0000124654 LIGAO2//AMORPHOUS GAN//NON POLAR NITRIDES
8 0.0000111552 SEMICONDUCTING ALUMINUM COMPOUNDS//CERAM OPERAT//ALGAN
9 0.0000095552 SI111 SUBSTRATES//SI111 SUBSTRATE//ALN BUFFER
10 0.0000082658 GAN NANOWIRES//AMMONIATING//GAN NANORODS