Class information for:
Level 1: ATOMIC LAYER DOPING//SI EPITAXIAL GROWTH//GERMANIUM SILICON COMPOUNDS

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
6311 1435 18.2 59%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
769 11658 SIGE//GERMANIUM//STRAINED SI

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 ATOMIC LAYER DOPING Author keyword 20 56% 2% 24
2 SI EPITAXIAL GROWTH Author keyword 15 88% 0% 7
3 GERMANIUM SILICON COMPOUNDS Author keyword 12 86% 0% 6
4 SELECTIVE EPITAXIAL GROWTH Author keyword 11 32% 2% 30
5 ELEVATED SOURCE DRAIN Author keyword 9 55% 1% 12
6 ELECT INTELLIGENT SYST Address 5 15% 2% 33
7 RPCVD Author keyword 5 47% 1% 8
8 SI EPITAXY Author keyword 5 55% 0% 6
9 NANOELECT SPINTRON Address 4 11% 2% 35
10 ATOMICALLY CONTROLLED PROCESSING Author keyword 4 75% 0% 3

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class		 LCSH search Wikipedia search
1 ATOMIC LAYER DOPING 20 56% 2% 24 Search ATOMIC+LAYER+DOPING Search ATOMIC+LAYER+DOPING
2 SI EPITAXIAL GROWTH 15 88% 0% 7 Search SI+EPITAXIAL+GROWTH Search SI+EPITAXIAL+GROWTH
3 GERMANIUM SILICON COMPOUNDS 12 86% 0% 6 Search GERMANIUM+SILICON+COMPOUNDS Search GERMANIUM+SILICON+COMPOUNDS
4 SELECTIVE EPITAXIAL GROWTH 11 32% 2% 30 Search SELECTIVE+EPITAXIAL+GROWTH Search SELECTIVE+EPITAXIAL+GROWTH
5 ELEVATED SOURCE DRAIN 9 55% 1% 12 Search ELEVATED+SOURCE+DRAIN Search ELEVATED+SOURCE+DRAIN
6 RPCVD 5 47% 1% 8 Search RPCVD Search RPCVD
7 SI EPITAXY 5 55% 0% 6 Search SI+EPITAXY Search SI+EPITAXY
8 ATOMICALLY CONTROLLED PROCESSING 4 75% 0% 3 Search ATOMICALLY+CONTROLLED+PROCESSING Search ATOMICALLY+CONTROLLED+PROCESSING
9 SIH4 4 23% 1% 15 Search SIH4 Search SIH4
10 SIGE EPITAXIAL GROWTH 3 100% 0% 3 Search SIGE+EPITAXIAL+GROWTH Search SIGE+EPITAXIAL+GROWTH

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 SILICON EPITAXY 23 44% 3% 40
2 TEMPERATURE SILICON EPITAXY 14 46% 2% 23
3 ULTRACLEAN ENVIRONMENT 12 86% 0% 6
4 CVD SILICON 10 63% 1% 10
5 LOW TEMPERATURE SILICON 7 64% 0% 7
6 SEG 6 80% 0% 4
7 DOPED POLYCRYSTALLINE SILICON 6 35% 1% 14
8 EPITAXIAL SILICON 4 24% 1% 16
9 ARGON ION BOMBARDMENT 4 38% 1% 9
10 GEXSI1 X 4 24% 1% 14

Journals

Reviews


Title Publ. year Cit. Active references % act. ref.
to same field
Atomically controlled processing for group IV semiconductors by chemical vapor deposition 2006 22 69 62%
GROWTH OF EPITAXIAL GERMANIUM-SILICON HETEROSTRUCTURES BY CHEMICAL VAPOR-DEPOSITION 1993 66 130 27%
SILICON HOMOEPITAXY BY RAPID THERMAL-PROCESSING CHEMICAL VAPOR-DEPOSITION (RTPCVD) - A REVIEW 1991 24 54 67%
Fine-tuning of the interface in high-quality epitaxial silicon films deposited by plasma-enhanced chemical vapor deposition at 200 degrees C 2013 2 25 24%
Critical review of the epitaxial growth of semiconductors by rapid thermal chemical vapor deposition 1997 7 99 39%
THE CURRENT STATUS OF COMMERCIAL LOW-TEMPERATURE SILICON EPITAXY 1991 0 8 88%
THE RAPID THERMAL-PROCESSING CHEMICAL VAPOR-DEPOSITION OF SILICON EPITAXIAL-FILMS 1991 0 25 84%
SOI BY CVD - EPITAXIAL LATERAL OVERGROWTH (ELO) PROCESS - REVIEW 1983 72 20 45%
ULTRAHIGH-VACUUM CVD EPITAXY OF SILICON AND GEXSI1-X 1991 3 33 42%
INTEGRATED PROCESSING FOR MICROELECTRONICS SCIENCE AND TECHNOLOGY 1992 5 119 27%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 ELECT INTELLIGENT SYST 5 15% 2.3% 33
2 NANOELECT SPINTRON 4 11% 2.4% 35
3 MUSASHINO OFF 4 41% 0.5% 7
4 ISOBE RD 1 25% 0.3% 4
5 SAKAI 1 30% 0.2% 3
6 FUTURE PV INNOVAT 1 50% 0.1% 1
7 G SI LETI 1 50% 0.1% 1
8 SHIRAKAWA DEV 1 50% 0.1% 1
9 WIDE BANDG SEMICOND TEAM 1 50% 0.1% 1
10 HFT4 1 18% 0.2% 3

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000202661 POLY SIGE//POLY SI1 XGEX//POLYCRYSTALLINE SILICON GERMANIUM
2 0.0000188026 HYDROGEN SURFACTANT//AUSTRALIAN COUNCIL EXCELLENCE QUANTUM COM//EXCELLENCE QUANTUM COMPUTAT COMMUN TECHNOL
3 0.0000171485 LATERAL CRYSTALLINE GROWTH//ACCELERATORS//ION INDUCED DEFECTS
4 0.0000139095 PARASITIC REACTION//CVD REACTOR//MOCVD REACTOR
5 0.0000126683 ULTRAVIOLET LIGHT DETECTORS//ORIENTATION OF MOLECULES//BORON CHEMICAL VAPOR DEPOSITION
6 0.0000105936 STRAINED SI//SIGE//STRAINED SILICON
7 0.0000095744 SI1 YCY//SI1 X YGEXCY//SICGE
8 0.0000095063 CHARGED NANOPARTICLES//SASAKI TEAM//MICROSTRUCT SCI MAT
9 0.0000076147 STRAINED SI1 XGEX SI QUANTUM WELLS//SI SIGE SUPERLATTICE//STRAINED SIGE SI
10 0.0000074788 HYDROGEN TERMINATION//SHIZUOKA TORY//LAYER BY LAYER OXIDATION