Class information for:
Level 1: SONOS//CHARGE TRAPPING LAYER//FLASH MEMORY

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
6224 1448 17.5 54%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
138 22619 IEEE TRANSACTIONS ON ELECTRON DEVICES//IEEE ELECTRON DEVICE LETTERS//SOLID-STATE ELECTRONICS

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 SONOS Author keyword 122 65% 8% 115
2 CHARGE TRAPPING LAYER Author keyword 41 90% 1% 18
3 FLASH MEMORY Author keyword 36 20% 12% 167
4 NROM Author keyword 35 76% 2% 25
5 NAND FLASH MEMORY Author keyword 33 32% 6% 87
6 SILICON OXIDE NITRIDE OXIDE SILICON SONOS Author keyword 29 72% 2% 23
7 2 BIT CELL Author keyword 27 92% 1% 11
8 FLASH MEMORIES Author keyword 24 32% 4% 64
9 TANOS Author keyword 22 66% 1% 21
10 FLASH DESIGN TEAM Address 21 90% 1% 9

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class		 LCSH search Wikipedia search
1 SONOS 122 65% 8% 115 Search SONOS Search SONOS
2 CHARGE TRAPPING LAYER 41 90% 1% 18 Search CHARGE+TRAPPING+LAYER Search CHARGE+TRAPPING+LAYER
3 FLASH MEMORY 36 20% 12% 167 Search FLASH+MEMORY Search FLASH+MEMORY
4 NROM 35 76% 2% 25 Search NROM Search NROM
5 NAND FLASH MEMORY 33 32% 6% 87 Search NAND+FLASH+MEMORY Search NAND+FLASH+MEMORY
6 SILICON OXIDE NITRIDE OXIDE SILICON SONOS 29 72% 2% 23 Search SILICON+OXIDE+NITRIDE+OXIDE+SILICON+SONOS Search SILICON+OXIDE+NITRIDE+OXIDE+SILICON+SONOS
7 2 BIT CELL 27 92% 1% 11 Search 2+BIT+CELL Search 2+BIT+CELL
8 FLASH MEMORIES 24 32% 4% 64 Search FLASH+MEMORIES Search FLASH+MEMORIES
9 TANOS 22 66% 1% 21 Search TANOS Search TANOS
10 CHARGE TRAPPING MEMORY 19 63% 1% 19 Search CHARGE+TRAPPING+MEMORY Search CHARGE+TRAPPING+MEMORY

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 SONOS 125 72% 7% 97
2 NROM 50 72% 3% 39
3 FLASH MEMORY 49 32% 9% 126
4 SONOS MEMORY 37 81% 2% 22
5 ERASE 15 67% 1% 14
6 BLOCKING OXIDE 15 88% 0% 7
7 DATA RETENTION CHARACTERISTICS 12 58% 1% 14
8 CHARGE RETENTION 12 56% 1% 15
9 NAND FLASH 12 59% 1% 13
10 PROGRAMMING SCHEME 11 100% 0% 6

Journals

Reviews


Title Publ. year Cit. Active
references		 % act. ref.
to same field
Future Prospects of NAND Flash Memory Technology-The Evolution from Floating Gate to Charge Trapping to 3D Stacking 2012 27 1 100%
Review on Non-Volatile Memory with High-k Dielectrics: Flash for Generation Beyond 32 nm 2014 4 43 49%
Electronic structure of silicon dioxide (a review) 2014 3 29 31%
Threshold Voltage Instability Mechanisms of Nitride Based Charge Trap Flash Memory-A Review 2014 1 51 59%
Perspective of flash memory realized on vertical Si nanowires 2012 3 14 71%
The Floating-Gate Non-Volatile Semiconductor Memory-From Invention to the Digital Age 2012 7 5 40%
The Impact of Tunnel Oxide Nitridation to Reliability Performance of Charge Storage Non-Volatile Memory Devices 2014 1 85 32%
NAND flash memory technology utilizing fringing electric field 2012 1 10 70%
Overview of emerging nonvolatile memory technologies 2014 2 82 17%
Technical Solutions to Mitigate Reliability Challenges due to Technology Scaling of Charge Storage NVM 2013 0 53 38%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 FLASH DESIGN TEAM 21 90% 0.6% 9
2 EMERGING CENT 12 54% 1.0% 15
3 MEMORY BUSINESS 9 48% 1.0% 14
4 RD TECHNOL DEV 6 40% 0.8% 12
5 NVM TEAM 6 100% 0.3% 4
6 PROD QUAL ASSURANCE TEAM 6 100% 0.3% 4
7 TU PT 6 100% 0.3% 4
8 MOBILE FLASH 4 67% 0.3% 4
9 MEMORY TECHNOL 4 75% 0.2% 3
10 MEMORY PROD GRP 4 36% 0.6% 8

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000175556 GE NANOCRYSTALS//NANO FLOATING GATE MEMORY//NANOCRYSTAL MEMORY
2 0.0000160977 POLYOXIDE//INTERPOLY OXIDE//NONPLANAR POLYOXIDE
3 0.0000159602 CHARGE PUMP//SWITCHED CAPACITOR SC CONVERTER//SWITCHED CAPACITOR SC CONVERTERS
4 0.0000108923 ANTIFUSE//SOURCE GATED TRANSISTOR SGT//MULTITIME PROGRAMMABLE MTP
5 0.0000102463 BACK BIAS EFFECT//VERTICAL MOSFET//SURROUNDING GATE TRANSISTOR
6 0.0000089667 STRESS INDUCED LEAKAGE CURRENT//SOFT BREAKDOWN//DIELECTRIC BREAKDOWN BD
7 0.0000083129 SINGLE EVENT BURNOUT SEB//SINGLE EVENT GATE RUPTURE SEGR//RREACT GRP
8 0.0000078599 BCDMOS//HIGH SIDE//MULTIPLE CHANNEL FET
9 0.0000067827 DEVICE MODELLING GRP//RANDOM DOPANT//DEVICE MODELING GRP
10 0.0000064507 HFO2//HIGH K//METAL GATE