Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
6069 | 1467 | 19.0 | 68% |
Classes in level above (level 2) |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | 3C SIC | Author keyword | 37 | 27% | 8% | 118 |
2 | FG NANOTECHNOL | Address | 21 | 65% | 1% | 20 |
3 | HOLLOW VOID | Author keyword | 17 | 100% | 1% | 8 |
4 | MONOMETHYLSILANE | Author keyword | 15 | 54% | 1% | 19 |
5 | FT2M | Address | 12 | 75% | 1% | 9 |
6 | POLY SIC | Author keyword | 10 | 63% | 1% | 10 |
7 | ZENTRUM MIKRO NANOTECHNOL | Address | 8 | 34% | 1% | 20 |
8 | HYDROGEN PLASMA SPUTTERING | Author keyword | 8 | 62% | 1% | 8 |
9 | 3C SIC FILM | Author keyword | 6 | 80% | 0% | 4 |
10 | POLY 3C SIC | Author keyword | 6 | 53% | 1% | 8 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | 3C SIC | 37 | 27% | 8% | 118 | Search 3C+SIC | Search 3C+SIC |
2 | HOLLOW VOID | 17 | 100% | 1% | 8 | Search HOLLOW+VOID | Search HOLLOW+VOID |
3 | MONOMETHYLSILANE | 15 | 54% | 1% | 19 | Search MONOMETHYLSILANE | Search MONOMETHYLSILANE |
4 | POLY SIC | 10 | 63% | 1% | 10 | Search POLY+SIC | Search POLY+SIC |
5 | HYDROGEN PLASMA SPUTTERING | 8 | 62% | 1% | 8 | Search HYDROGEN+PLASMA+SPUTTERING | Search HYDROGEN+PLASMA+SPUTTERING |
6 | 3C SIC FILM | 6 | 80% | 0% | 4 | Search 3C+SIC+FILM | Search 3C+SIC+FILM |
7 | POLY 3C SIC | 6 | 53% | 1% | 8 | Search POLY+3C+SIC | Search POLY+3C+SIC |
8 | TRIODE PLASMA CVD | 4 | 67% | 0% | 4 | Search TRIODE+PLASMA+CVD | Search TRIODE+PLASMA+CVD |
9 | 3C SIC HETEROEPITAXY | 4 | 50% | 0% | 6 | Search 3C+SIC+HETEROEPITAXY | Search 3C+SIC+HETEROEPITAXY |
10 | SICOI | 4 | 50% | 0% | 6 | Search SICOI | Search SICOI |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | 3C SIC FILMS | 26 | 53% | 2% | 35 |
2 | 1 3 DISILABUTANE | 26 | 87% | 1% | 13 |
3 | BETA SIC FILMS | 17 | 68% | 1% | 15 |
4 | SIC FILMS | 17 | 34% | 3% | 41 |
5 | CUBIC SIC FILMS | 17 | 72% | 1% | 13 |
6 | BETA SIC SI100 INTERFACES | 14 | 100% | 0% | 7 |
7 | MONOMETHYLSILANE | 12 | 56% | 1% | 15 |
8 | HETEROEPITAXIAL GROWTH | 11 | 14% | 5% | 75 |
9 | C2H4 BEAM | 11 | 100% | 0% | 6 |
10 | HYDROGEN CHLORIDE GASES | 11 | 100% | 0% | 6 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
3C-SiC Heteroepitaxial Growth on Silicon: The Quest for Holy Grail | 2015 | 1 | 111 | 75% |
Silicon carbide for microelectromechanical systems | 2000 | 80 | 100 | 52% |
Micro- and nanomechanical structures for silicon carbide MEMS and NEMS | 2008 | 31 | 130 | 47% |
Advances in silicon carbide science and technology at the micro- and nanoscales | 2013 | 15 | 222 | 29% |
Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications | 2007 | 145 | 454 | 18% |
SiC sensors: a review | 2007 | 65 | 58 | 36% |
Silicon carbide and silicon carbide-based structures - The physics of epitaxy | 2002 | 62 | 53 | 21% |
Prospects of chemical vapor grown silicon carbide thin films using halogen-free single sources in nuclear reactor applications: A review | 2013 | 3 | 83 | 39% |
RECENT DEVELOPMENTS IN SIC SINGLE-CRYSTAL ELECTRONICS | 1992 | 171 | 61 | 31% |
Multi-Scale Simulation of Nucleation and Growth of Nanoscale SiC on Si | 2012 | 1 | 99 | 42% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | FG NANOTECHNOL | 21 | 65% | 1.4% | 20 |
2 | FT2M | 12 | 75% | 0.6% | 9 |
3 | ZENTRUM MIKRO NANOTECHNOL | 8 | 34% | 1.4% | 20 |
4 | FESTKORPERELEKTR | 5 | 44% | 0.5% | 8 |
5 | QUAL EVALUAT CHEM ANAL | 4 | 67% | 0.3% | 4 |
6 | MICROSENSOR ACTUATOR TECHNOL | 4 | 50% | 0.4% | 6 |
7 | NOVASIC | 4 | 38% | 0.5% | 8 |
8 | MICROFABRICAT | 3 | 17% | 1.1% | 16 |
9 | SEMICOND SCI ENGN | 3 | 60% | 0.2% | 3 |
10 | PURIFIED MAT | 2 | 38% | 0.3% | 5 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000200873 | ELECTRON BEAM ANNEALING//RAFTER//ION BEAM SYNTHESIS IBS |
2 | 0.0000172990 | AMORPHOUS SILICON CARBIDE//SILICON CARBON ALLOYS//A SIC H |
3 | 0.0000168306 | SIMA//HEXAGONAL SURFACES//DSMDRECAMSPCSI |
4 | 0.0000154645 | MICROPIPE//SUBLIMATION GROWTH//MICROPIPES |
5 | 0.0000139097 | ISOTHERMAL CHEMICAL VAPOR INFILTRATION//PRESSURE PULSED CHEMICAL VAPOR INFILTRATION//3D IMAGE BASED MODELING |
6 | 0.0000100781 | OHMIC CONTACT//OHMIC CONTACTS//P TYPE SIC |
7 | 0.0000093244 | IN FRANTZEVICH PROBLEMS MAT SCI//GROWTH TECHNIQUES//SEMICOND HETEROSTRUCT |
8 | 0.0000092598 | SI1 YCY//SI1 X YGEXCY//SICGE |
9 | 0.0000084428 | SIC NANOWIRES//SILICON CARBIDE NANOWIRES//SIC NANORODS |
10 | 0.0000076343 | 4H SIC//SILICON CARBIDE SIC//BIPOLAR JUNCTION TRANSISTORS BJTS |