Class information for:
Level 1: HYDROGEN TERMINATION//SHIZUOKA TORY//LAYER BY LAYER OXIDATION

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
6060 1468 21.9 65%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
2900 2299 PHOTORESIST REMOVAL//WET OZONE//HYDROGEN TERMINATION

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 HYDROGEN TERMINATION Author keyword 11 28% 2% 33
2 SHIZUOKA TORY Address 11 100% 0% 6
3 LAYER BY LAYER OXIDATION Author keyword 11 69% 1% 9
4 H TERMINATION Author keyword 8 46% 1% 13
5 NATIVE OXIDE Author keyword 7 24% 2% 25
6 NATIVE OXIDE GROWTH Author keyword 6 100% 0% 4
7 PREOXIDE Author keyword 6 100% 0% 4
8 WET CHEMICAL PRE TREATMENT Author keyword 6 100% 0% 4
9 SIO2 SI INTERFACE Author keyword 5 29% 1% 16
10 NATIVE OXIDATION Author keyword 5 63% 0% 5

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class		 LCSH search Wikipedia search
1 HYDROGEN TERMINATION 11 28% 2% 33 Search HYDROGEN+TERMINATION Search HYDROGEN+TERMINATION
2 LAYER BY LAYER OXIDATION 11 69% 1% 9 Search LAYER+BY+LAYER+OXIDATION Search LAYER+BY+LAYER+OXIDATION
3 H TERMINATION 8 46% 1% 13 Search H+TERMINATION Search H+TERMINATION
4 NATIVE OXIDE 7 24% 2% 25 Search NATIVE+OXIDE Search NATIVE+OXIDE
5 NATIVE OXIDE GROWTH 6 100% 0% 4 Search NATIVE+OXIDE+GROWTH Search NATIVE+OXIDE+GROWTH
6 PREOXIDE 6 100% 0% 4 Search PREOXIDE Search PREOXIDE
7 WET CHEMICAL PRE TREATMENT 6 100% 0% 4 Search WET+CHEMICAL+PRE+TREATMENT Search WET+CHEMICAL+PRE+TREATMENT
8 SIO2 SI INTERFACE 5 29% 1% 16 Search SIO2+SI+INTERFACE Search SIO2+SI+INTERFACE
9 NATIVE OXIDATION 5 63% 0% 5 Search NATIVE+OXIDATION Search NATIVE+OXIDATION
10 H TERMINATED SI SURFACE 4 50% 0% 6 Search H+TERMINATED+SI+SURFACE Search H+TERMINATED+SI+SURFACE

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 HYDROGEN TERMINATION 147 54% 13% 188
2 HF TREATMENT 36 47% 4% 57
3 WAFER SURFACES 25 49% 3% 37
4 H TERMINATED SI111 22 68% 1% 19
5 LEAKAGE CURRENT DENSITY 21 90% 1% 9
6 NH4F 17 45% 2% 29
7 SI100 SURFACES 14 18% 5% 72
8 SI111 SURFACES 13 14% 6% 91
9 MICROROUGHNESS 12 37% 2% 26
10 OXYGEN FREE WATER 12 86% 0% 6

Journals

Reviews


Title Publ. year Cit. Active references % act. ref.
to same field
Photoelectron spectroscopy studies of SiO2/Si interfaces 2007 56 103 33%
HYDROGEN ON SI - UBIQUITOUS SURFACE TERMINATION AFTER WET-CHEMICAL PROCESSING 1995 62 78 63%
The picture tells the story: using surface morphology to probe chemical etching reactions 2001 22 27 48%
Functionalization of oxide-free silicon surfaces 2013 3 166 27%
Chemical structures of the SiO2/Si interface 1995 72 169 34%
Finding Needles in Haystacks: Scanning Tunneling Microscopy Reveals the Complex Reactivity of Si(100) Surfaces 2015 0 32 41%
Importance of Si surface flatness to realize high-performance Si devices utilizing ultrathin films with new material system 2014 0 33 39%
New era of silicon technologies due to radical reaction based semiconductor manufacturing 2006 65 16 6%
PRESENT STATE OF SURFACE CLEANING TECHNOLOGY AND ITS FUTURE-PROBLEMS 1992 0 4 100%
A SURVEY OF NONDESTRUCTIVE SURFACE CHARACTERIZATION METHODS USED TO INSURE RELIABLE GATE OXIDE FABRICATION FOR SILICON IC DEVICES 1993 17 32 28%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 SHIZUOKA TORY 11 100% 0.4% 6
2 SYST SOLUT PLANNING 4 67% 0.3% 4
3 ABT SILIZIUMPHOTOVOLTAIK 4 75% 0.2% 3
4 DISPLAY TECHNOL DEV GRP 4 44% 0.5% 7
5 PHOTOENERGET ORGAN MAT 4 19% 1.2% 18
6 J AN SCI TECHNOL ORG 4 46% 0.4% 6
7 LIQUID CRYSTAL DISPLAY GRP 2 67% 0.1% 2
8 ABT PHOTOVOLTAIK 2 20% 0.5% 7
9 ADV MEMORY DEV 2 26% 0.3% 5
10 ABT SILIZIUMPHOTOVOLTA 1 100% 0.1% 2

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000195911 INTERFACIAL SILICON EMISSION//SILICON OXIDATION//LOW TEMPERATURE SILICON OXIDATION
2 0.0000186352 TRANSLATIONAL KINETIC ENERGY//POINT DEFECT GENERATION//OXYGEN MOLECULAR BEAM
3 0.0000163871 SPRAY ETCHING//ETCH FACTOR//ETCHING FACTOR
4 0.0000145283 INTER E ENGN GRP//CHAIR GEN MAT SCI//ALCOY ENGN
5 0.0000141421 WET OZONE//PHOTORESIST REMOVAL//RESIST REMOVAL
6 0.0000136678 SID4//DEUTERIUM D ANNEALING//TRAP CREATION
7 0.0000133817 CLEANROOM//FAN FILTER UNIT//ORGANIC CONTAMINATION
8 0.0000123747 NOYES 210//ORGANIC MONOLAYER//HYDROGEN TERMINATED SILICON
9 0.0000097565 HYDROGEN SURFACTANT//AUSTRALIAN COUNCIL EXCELLENCE QUANTUM COM//EXCELLENCE QUANTUM COMPUTAT COMMUN TECHNOL
10 0.0000081268 ANISOTROPIC ETCHING//MICRONANOSYST ENGN//MEMS MICRO NANO SYST