Class information for: |
Basic class information |
| ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
|---|---|---|---|
| 60 | 4562 | 23.9 | 71% |
Classes in level above (level 2) |
Terms with highest relevance score |
| Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|---|
| 1 | HFO2 | Author keyword | 132 | 38% | 6% | 276 |
| 2 | HIGH K | Author keyword | 80 | 28% | 5% | 241 |
| 3 | METAL GATE | Author keyword | 67 | 36% | 3% | 150 |
| 4 | HIGH K DIELECTRICS | Author keyword | 52 | 32% | 3% | 136 |
| 5 | HAFNIUM COMPOUNDS | Author keyword | 48 | 39% | 2% | 98 |
| 6 | HAFNIUM OXIDE | Author keyword | 48 | 35% | 2% | 112 |
| 7 | HIGH K GATE DIELECTRICS | Author keyword | 45 | 52% | 1% | 61 |
| 8 | HAFNIUM SILICATE | Author keyword | 39 | 65% | 1% | 37 |
| 9 | HIGH K GATE DIELECTRIC | Author keyword | 38 | 50% | 1% | 56 |
| 10 | HIGH K DIELECTRIC | Author keyword | 34 | 29% | 2% | 100 |
Web of Science journal categories |
Author Key Words |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
|---|---|---|---|---|---|---|---|
| 1 | HFO2 | 132 | 38% | 6% | 276 | Search HFO2 | Search HFO2 |
| 2 | HIGH K | 80 | 28% | 5% | 241 | Search HIGH+K | Search HIGH+K |
| 3 | METAL GATE | 67 | 36% | 3% | 150 | Search METAL+GATE | Search METAL+GATE |
| 4 | HIGH K DIELECTRICS | 52 | 32% | 3% | 136 | Search HIGH+K+DIELECTRICS | Search HIGH+K+DIELECTRICS |
| 5 | HAFNIUM COMPOUNDS | 48 | 39% | 2% | 98 | Search HAFNIUM+COMPOUNDS | Search HAFNIUM+COMPOUNDS |
| 6 | HAFNIUM OXIDE | 48 | 35% | 2% | 112 | Search HAFNIUM+OXIDE | Search HAFNIUM+OXIDE |
| 7 | HIGH K GATE DIELECTRICS | 45 | 52% | 1% | 61 | Search HIGH+K+GATE+DIELECTRICS | Search HIGH+K+GATE+DIELECTRICS |
| 8 | HAFNIUM SILICATE | 39 | 65% | 1% | 37 | Search HAFNIUM+SILICATE | Search HAFNIUM+SILICATE |
| 9 | HIGH K GATE DIELECTRIC | 38 | 50% | 1% | 56 | Search HIGH+K+GATE+DIELECTRIC | Search HIGH+K+GATE+DIELECTRIC |
| 10 | HIGH K DIELECTRIC | 34 | 29% | 2% | 100 | Search HIGH+K+DIELECTRIC | Search HIGH+K+DIELECTRIC |
Key Words Plus |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | GATE DIELECTRICS | 466 | 39% | 21% | 939 |
| 2 | HFO2 | 187 | 36% | 9% | 414 |
| 3 | HAFNIUM OXIDE | 138 | 57% | 4% | 163 |
| 4 | HFO2 FILMS | 88 | 60% | 2% | 97 |
| 5 | HAFNIUM | 74 | 23% | 6% | 288 |
| 6 | HFO2 THIN FILMS | 68 | 60% | 2% | 75 |
| 7 | ATOMIC LAYER DEPOSITION | 59 | 13% | 9% | 428 |
| 8 | KAPPA GATE DIELECTRICS | 57 | 47% | 2% | 89 |
| 9 | DIELECTRICS | 51 | 10% | 10% | 475 |
| 10 | HFO2XAL2O31 X | 49 | 94% | 0% | 17 |
Journals |
Reviews |
| Title | Publ. year | Cit. | Active references | % act. ref. to same field |
|---|---|---|---|---|
| High-K materials and metal gates for CMOS applications | 2015 | 6 | 283 | 65% |
| High dielectric constant gate oxides for metal oxide Si transistors | 2006 | 819 | 210 | 73% |
| Development of hafnium based high-k materials-A review | 2011 | 109 | 270 | 58% |
| High dielectric constant oxides | 2004 | 555 | 129 | 74% |
| High-kappa gate dielectrics: Current status and materials properties considerations | 2001 | 3972 | 93 | 43% |
| Growth, dielectric properties, and memory device applications of ZrO2 thin films | 2013 | 32 | 141 | 43% |
| Integrations and challenges of novel high-k gate stacks in advanced CMOS technology | 2011 | 40 | 345 | 61% |
| Advanced high-kappa dielectric stacks with polySi and metal gates: Recent progress and current challenges | 2006 | 160 | 80 | 73% |
| Review on high-k dielectrics reliability issues | 2005 | 267 | 15 | 47% |
| Design of Higher-k and More Stable Rare Earth Oxides as Gate Dielectrics for Advanced CMOS Devices | 2012 | 24 | 22 | 64% |
Address terms |
| Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | LONDON NANOTECHNOL ELECT ELECT ENGN | 20 | 100% | 0.2% | 9 |
| 2 | SILICON NANO DEVICE | 18 | 24% | 1.5% | 68 |
| 3 | ADV PROC DEV TEAM | 17 | 68% | 0.3% | 15 |
| 4 | MIRAI ASET | 17 | 100% | 0.2% | 8 |
| 5 | EXPT PHYS TECHNOL | 16 | 38% | 0.7% | 34 |
| 6 | TEL TECHNOL | 13 | 67% | 0.3% | 12 |
| 7 | ANHUI NANOMAT NANOSTRUCT | 9 | 19% | 1.0% | 44 |
| 8 | SEMICOND EQUIPMENT SYST | 8 | 70% | 0.2% | 7 |
| 9 | RADIAT DETECT MAT DEVICES | 8 | 60% | 0.2% | 9 |
| 10 | DIGITAL DNA S CHINA | 8 | 100% | 0.1% | 5 |
Related classes at same level (level 1) |
| Rank | Relatedness score | Related classes |
|---|---|---|
| 1 | 0.0000148409 | EPITAXIAL OXIDES//S UNICAT//SI001 SUBSTRATES |
| 2 | 0.0000133849 | METAL INSULATOR METAL MIM CAPACITOR//VOLTAGE COEFFICIENT OF CAPACITANCE VCC//METAL INSULATOR METAL MIM |
| 3 | 0.0000112816 | NI GERMANIDE//MBE//GERMANIUM GE |
| 4 | 0.0000100135 | DIRECT TUNNELING//QUANTUM MECHANICAL EFFECTS QMES//WAVE FUNCTION PENETRATION |
| 5 | 0.0000095828 | TANTALUM OXIDE//TANTALUM PENTOXIDE//TA2O5 |
| 6 | 0.0000089488 | ATOMIC LAYER DEPOSITION//MOLECULAR LAYER DEPOSITION MLD//MOLECULAR LAYER DEPOSITION |
| 7 | 0.0000084396 | ADV COATINGS EXPT//REACTIVE ION ASSISTED COEVAPORATION//TETRAGONAL AND MONOCLINIC PHASES |
| 8 | 0.0000080048 | MOS TUNNELING DIODE//ELECTRON HOLE PLASMA RECOMBINATION//LATERAL NONUNIFORMITY LNU |
| 9 | 0.0000077564 | NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI//NEGATIVE BIAS TEMPERATURE INSTABILITY//CHRISTIAN DOPPLER TCAD |
| 10 | 0.0000072688 | GAAS MOSFET//INTERFACE CONTROL LAYER//III V MOSFET |