Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
5987 | 1479 | 15.8 | 64% |
Classes in level above (level 2) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
993 | 9970 | THIN FILM TRANSISTOR//THIN FILM TRANSISTORS TFTS//THIN FILM TRANSISTOR TFT |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | POLY SI TFT | Author keyword | 39 | 50% | 4% | 56 |
2 | POLYCRYSTALLINE SILICON THIN FILM TRANSISTORS POLY SI TFTS | Author keyword | 33 | 83% | 1% | 19 |
3 | JOINT SCI TECHNOL | Address | 29 | 67% | 2% | 26 |
4 | POLYCRYSTALLINE SILICON POLY SI | Author keyword | 28 | 56% | 2% | 35 |
5 | LCD PROC TECHNOL | Address | 23 | 76% | 1% | 16 |
6 | THIN FILM TRANSISTOR TFT | Author keyword | 22 | 19% | 7% | 103 |
7 | POLY SI THIN FILM TRANSISTOR TFT | Author keyword | 21 | 78% | 1% | 14 |
8 | POLYCRYSTALLINE SILICON THIN FILM TRANSISTOR POLY SI TFT | Author keyword | 19 | 74% | 1% | 14 |
9 | BASE TECHNOL | Address | 17 | 50% | 2% | 24 |
10 | POLY SI | Author keyword | 16 | 21% | 5% | 69 |
Web of Science journal categories |
Author Key Words |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | POLYSILICON TFTS | 52 | 76% | 3% | 37 |
2 | TFTS | 30 | 19% | 10% | 148 |
3 | POLY SI TFTS | 30 | 33% | 5% | 74 |
4 | POLYSILICON TFT | 28 | 64% | 2% | 27 |
5 | OFF CURRENT | 27 | 92% | 1% | 11 |
6 | GAP STATE DENSITY | 18 | 67% | 1% | 16 |
7 | NH3 PLASMA PASSIVATION | 17 | 75% | 1% | 12 |
8 | DEGRADATION PHENOMENON | 14 | 100% | 0% | 7 |
9 | POLYCRYSTALLINE SILICON TFTS | 12 | 75% | 1% | 9 |
10 | PLASMA HYDROGENATION | 12 | 46% | 1% | 19 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references |
% act. ref. to same field |
---|---|---|---|---|
POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS | 1995 | 210 | 81 | 35% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | JOINT SCI TECHNOL | 29 | 67% | 1.8% | 26 |
2 | LCD PROC TECHNOL | 23 | 76% | 1.1% | 16 |
3 | BASE TECHNOL | 17 | 50% | 1.6% | 24 |
4 | MAT DEVICE PLICAT | 12 | 75% | 0.6% | 9 |
5 | GRP MICROELECT | 12 | 46% | 1.3% | 19 |
6 | INNOVAT MAT PROC | 9 | 39% | 1.3% | 19 |
7 | ELECT ENGN COMP SCI 50 | 7 | 53% | 0.7% | 10 |
8 | MOBILE DISPLAY BUSINESS TEAM | 6 | 100% | 0.3% | 4 |
9 | GRP MICROELECT VISUALISAT | 6 | 33% | 0.9% | 14 |
10 | UP A 6076 | 4 | 33% | 0.6% | 9 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000280682 | METAL INDUCED CRYSTALLIZATION//SOLID PHASE CRYSTALLIZATION//METAL INDUCED LATERAL CRYSTALLIZATION |
2 | 0.0000259089 | EXCIMER LASER CRYSTALLIZATION//LASER CRYSTALLIZATION//EXCIMER LASER ANNEALING |
3 | 0.0000174787 | ACTIVE MATRIX ORGANIC LIGHT EMITTING DIODE AMOLED//PIXEL CIRCUIT//AMORPHOUS SILICON THIN FILM TRANSISTOR |
4 | 0.0000159980 | POLYSILICON RESISTORS//HEAVILY DOPED POLYSILICON RESISTOR//LPCVD SI LAYERS |
5 | 0.0000124691 | POLY SIGE//POLY SI1 XGEX//POLYCRYSTALLINE SILICON GERMANIUM |
6 | 0.0000112201 | POLYOXIDE//INTERPOLY OXIDE//NONPLANAR POLYOXIDE |
7 | 0.0000065206 | SIPOS//MSOS O P STRUCTURE//SEMI INSULATING POLYCRYSTALLINE SILICON |
8 | 0.0000053820 | AMORPHOUS INDIUM GALLIUM ZINC OXIDE A IGZO//IGZO//INGAZNO |
9 | 0.0000053328 | HOT CARRIER//CHANNEL INITIATED SECONDARY ELECTRON CHISEL//HOT CARRIER DEGRADATION |
10 | 0.0000046881 | ANTIFUSE//SOURCE GATED TRANSISTOR SGT//MULTITIME PROGRAMMABLE MTP |