Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
5965 | 1482 | 18.1 | 63% |
Classes in level above (level 2) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
993 | 9970 | THIN FILM TRANSISTOR//THIN FILM TRANSISTORS TFTS//THIN FILM TRANSISTOR TFT |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | EXCIMER LASER CRYSTALLIZATION | Author keyword | 61 | 70% | 3% | 50 |
2 | LASER CRYSTALLIZATION | Author keyword | 46 | 53% | 4% | 62 |
3 | EXCIMER LASER ANNEALING | Author keyword | 28 | 41% | 4% | 54 |
4 | SEMICOND ELECT INTEGRAT SCI | Address | 20 | 56% | 2% | 25 |
5 | POLYCRYSTALLINE SILICON | Author keyword | 15 | 14% | 6% | 95 |
6 | FLASH LAMP ANNEALING | Author keyword | 15 | 47% | 2% | 23 |
7 | POLY SI | Author keyword | 13 | 19% | 4% | 63 |
8 | LOCATION CONTROL | Author keyword | 11 | 67% | 1% | 10 |
9 | MELT DURATION | Author keyword | 8 | 75% | 0% | 6 |
10 | SECONDARY GRAIN GROWTH | Author keyword | 8 | 75% | 0% | 6 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | EXCIMER LASER CRYSTALLIZATION | 61 | 70% | 3% | 50 | Search EXCIMER+LASER+CRYSTALLIZATION | Search EXCIMER+LASER+CRYSTALLIZATION |
2 | LASER CRYSTALLIZATION | 46 | 53% | 4% | 62 | Search LASER+CRYSTALLIZATION | Search LASER+CRYSTALLIZATION |
3 | EXCIMER LASER ANNEALING | 28 | 41% | 4% | 54 | Search EXCIMER+LASER+ANNEALING | Search EXCIMER+LASER+ANNEALING |
4 | POLYCRYSTALLINE SILICON | 15 | 14% | 6% | 95 | Search POLYCRYSTALLINE+SILICON | Search POLYCRYSTALLINE+SILICON |
5 | FLASH LAMP ANNEALING | 15 | 47% | 2% | 23 | Search FLASH+LAMP+ANNEALING | Search FLASH+LAMP+ANNEALING |
6 | POLY SI | 13 | 19% | 4% | 63 | Search POLY+SI | Search POLY+SI |
7 | LOCATION CONTROL | 11 | 67% | 1% | 10 | Search LOCATION+CONTROL | Search LOCATION+CONTROL |
8 | MELT DURATION | 8 | 75% | 0% | 6 | Search MELT+DURATION | Search MELT+DURATION |
9 | SECONDARY GRAIN GROWTH | 8 | 75% | 0% | 6 | Search SECONDARY+GRAIN+GROWTH | Search SECONDARY+GRAIN+GROWTH |
10 | HYDROGEN MODULATION DOPED AMORPHOUS SILICON | 8 | 100% | 0% | 5 | Search HYDROGEN+MODULATION+DOPED+AMORPHOUS+SILICON | Search HYDROGEN+MODULATION+DOPED+AMORPHOUS+SILICON |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | SI FILMS | 41 | 35% | 6% | 95 |
2 | EXCIMER LASER CRYSTALLIZATION | 40 | 54% | 4% | 52 |
3 | EXPLOSIVE CRYSTALLIZATION | 36 | 52% | 3% | 49 |
4 | POLY SI TFTS | 30 | 33% | 5% | 75 |
5 | PRESSURE H2O VAPOR | 26 | 69% | 1% | 22 |
6 | LATERAL GRAIN GROWTH | 21 | 75% | 1% | 15 |
7 | SUPER LATERAL GROWTH | 17 | 79% | 1% | 11 |
8 | MOLTEN LAYERS | 14 | 100% | 0% | 7 |
9 | TFTS | 12 | 12% | 6% | 93 |
10 | A SI FILMS | 11 | 67% | 1% | 10 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references |
% act. ref. to same field |
---|---|---|---|---|
Polysilicon thin-film transistors on polymer substrates | 2012 | 10 | 48 | 50% |
EXCIMER LASER CRYSTALLIZATION AND NANOSTRUCTURING OF AMORPHOUS SILICON FOR PHOTOVOLTAIC APPLICATIONS | 2008 | 4 | 50 | 84% |
Heat transfer and phase transformations in laser annealing of thin Si films | 2002 | 13 | 23 | 83% |
Technological Innovation of Thin-Film Transistors: Technology Development, History, and Future | 2012 | 4 | 17 | 35% |
THE AMORPHOUS TO CRYSTALLINE PHASE-TRANSITION AND VICE-VERSA | 1995 | 0 | 65 | 26% |
COMPUTER-AIDED CALCULATION OF THE ABERRATION COEFFICIENTS OF MICROWAVE CAVITY LENSES .1. PRIMARY (2ND-ORDER) ABERRATIONS | 1983 | 1 | 3 | 100% |
SHOCK CRYSTALLIZATION OF FILMS | 1983 | 3 | 5 | 80% |
LASER EPITAXY OF MATERIALS FOR ELECTRONICS | 1984 | 4 | 34 | 53% |
ION-BEAM-INDUCED AND LASER-INDUCED SURFACE MODIFICATIONS | 1985 | 24 | 52 | 6% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | SEMICOND ELECT INTEGRAT SCI | 20 | 56% | 1.7% | 25 |
2 | NOVEL LASER TECH PLICAT SYST | 6 | 80% | 0.3% | 4 |
3 | DPTO MECAN MAQUINAS MOTO TERM FLUIDOS | 6 | 100% | 0.3% | 4 |
4 | MAT WISSEN MIKROCHARAKTERISIERUNG | 4 | 75% | 0.2% | 3 |
5 | ALTEDEC | 3 | 100% | 0.2% | 3 |
6 | PHYS FUNCT MAT SCI | 3 | 100% | 0.2% | 3 |
7 | ELECT COMPONENTS TECHNOL MAT | 3 | 16% | 1.1% | 16 |
8 | ELE ON TUBE DEVICES | 2 | 38% | 0.3% | 5 |
9 | TECHNOL PLATFORM | 2 | 15% | 0.9% | 14 |
10 | CIVIL ENGN PHYS | 2 | 67% | 0.1% | 2 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000259089 | POLY SI TFT//POLYCRYSTALLINE SILICON THIN FILM TRANSISTORS POLY SI TFTS//JOINT SCI TECHNOL |
2 | 0.0000249187 | METAL INDUCED CRYSTALLIZATION//SOLID PHASE CRYSTALLIZATION//METAL INDUCED LATERAL CRYSTALLIZATION |
3 | 0.0000185488 | EXCIMER LASER DOPING//LASER INDUCED SURFACE PROCESS//WIDE BANDGAP OXIDES |
4 | 0.0000126624 | ZONE MELTING RECRYSTALLIZATION//ARCHITECTURE TECH//LASER INDUCED TEMPERATURE RISE |
5 | 0.0000094183 | CROSS WAVES//KIRENSKI PHYS//SELF LIMITED GROWTH |
6 | 0.0000076666 | SPECIAL DESIGN TECHNOL BUR NAUKA//PHYS CHEM PROBLEMS CERAM//SORPTION ANALYSIS |
7 | 0.0000067332 | POLY SIGE//POLY SI1 XGEX//POLYCRYSTALLINE SILICON GERMANIUM |
8 | 0.0000065510 | IBIEC//SOLID PHASE EPITAXIAL GROWTH//LATERAL SOLID PHASE EPITAXY |
9 | 0.0000059575 | MICROCRYSTALLINE SILICON//SID PHYS DEVICES//MU C SI H |
10 | 0.0000059106 | INFNSEZ LECCE//FAST SIGNALS//FOCUSED ION BEAM IMAGING |