Class information for: |
Basic class information |
| ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
|---|---|---|---|
| 5604 | 1534 | 19.9 | 56% |
Classes in level above (level 2) |
| ID, lev. above |
Publications | Label for level above |
|---|---|---|
| 913 | 10550 | EL2//NONIONIZING ENERGY LOSS NIEL//DX CENTERS |
Terms with highest relevance score |
| Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|---|
| 1 | DX CENTERS | Author keyword | 22 | 51% | 2% | 31 |
| 2 | DX CENTER | Author keyword | 10 | 38% | 1% | 20 |
| 3 | DX CENTRE | Author keyword | 4 | 75% | 0% | 3 |
| 4 | BISTABLE CENTERS | Author keyword | 3 | 100% | 0% | 3 |
| 5 | PERSISTENT PHOTOEFFECTS | Author keyword | 3 | 100% | 0% | 3 |
| 6 | DX CENTRES | Author keyword | 2 | 67% | 0% | 2 |
| 7 | NEGATIVE U DEFECT | Author keyword | 2 | 67% | 0% | 2 |
| 8 | PERSISTENT PHOTOCONDUCTIVITY | Author keyword | 1 | 12% | 1% | 11 |
| 9 | ALGAAS SN | Author keyword | 1 | 100% | 0% | 2 |
| 10 | BISTABLE CENTER | Author keyword | 1 | 100% | 0% | 2 |
Web of Science journal categories |
Author Key Words |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
|---|---|---|---|---|---|---|---|
| 1 | DX CENTERS | 22 | 51% | 2% | 31 | Search DX+CENTERS | Search DX+CENTERS |
| 2 | DX CENTER | 10 | 38% | 1% | 20 | Search DX+CENTER | Search DX+CENTER |
| 3 | DX CENTRE | 4 | 75% | 0% | 3 | Search DX+CENTRE | Search DX+CENTRE |
| 4 | BISTABLE CENTERS | 3 | 100% | 0% | 3 | Search BISTABLE+CENTERS | Search BISTABLE+CENTERS |
| 5 | PERSISTENT PHOTOEFFECTS | 3 | 100% | 0% | 3 | Search PERSISTENT+PHOTOEFFECTS | Search PERSISTENT+PHOTOEFFECTS |
| 6 | DX CENTRES | 2 | 67% | 0% | 2 | Search DX+CENTRES | Search DX+CENTRES |
| 7 | NEGATIVE U DEFECT | 2 | 67% | 0% | 2 | Search NEGATIVE+U+DEFECT | Search NEGATIVE+U+DEFECT |
| 8 | PERSISTENT PHOTOCONDUCTIVITY | 1 | 12% | 1% | 11 | Search PERSISTENT+PHOTOCONDUCTIVITY | Search PERSISTENT+PHOTOCONDUCTIVITY |
| 9 | ALGAAS SN | 1 | 100% | 0% | 2 | Search ALGAAS++SN | Search ALGAAS++SN |
| 10 | BISTABLE CENTER | 1 | 100% | 0% | 2 | Search BISTABLE+CENTER | Search BISTABLE+CENTER |
Key Words Plus |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | ALXGA1 XAS ALLOYS | 130 | 64% | 8% | 126 |
| 2 | DX CENTERS | 92 | 53% | 8% | 124 |
| 3 | DX CENTER | 75 | 58% | 6% | 88 |
| 4 | SI DOPED ALXGA1 XAS | 65 | 84% | 2% | 36 |
| 5 | LARGE LATTICE RELAXATION | 59 | 84% | 2% | 32 |
| 6 | DOPED ALXGA1 XAS | 40 | 66% | 2% | 38 |
| 7 | PERSISTENT PHOTOCONDUCTIVITY | 40 | 25% | 9% | 136 |
| 8 | BISTABLE CENTERS | 38 | 93% | 1% | 14 |
| 9 | DXTE CENTERS | 33 | 100% | 1% | 13 |
| 10 | EMISSION KINETICS | 21 | 90% | 1% | 9 |
Journals |
Reviews |
| Title | Publ. year | Cit. | Active references | % act. ref. to same field |
|---|---|---|---|---|
| DEEP DONOR LEVELS (DX CENTERS) IN III-V SEMICONDUCTORS | 1990 | 548 | 104 | 84% |
| PHOTOLUMINESCENCE OF ALXGA1-XAS ALLOYS | 1994 | 339 | 214 | 27% |
| DX AND RELATED DEFECTS IN SEMICONDUCTORS | 1993 | 37 | 100 | 80% |
| Defect identification using capacitance spectroscopy | 1999 | 12 | 79 | 38% |
| Semiconductor CdF2:Ga and CdF2:In Crystals as Media for Real-Time Holography | 2012 | 0 | 38 | 79% |
| STRUCTURE AND STABILITY OF THE DX-CENTERS IN GAAS AND INP | 1995 | 0 | 37 | 86% |
| DEEP-LEVEL DEFECTS IN EPITAXIAL III/V MATERIALS | 1993 | 3 | 157 | 16% |
| DEEP LEVELS IN III-V-COMPOUND SEMICONDUCTORS GROWN BY MOLECULAR-BEAM EPITAXY | 1988 | 4 | 121 | 27% |
| FUNDAMENTALS OF JUNCTION MEASUREMENTS IN THE STUDY OF DEEP ENERGY-LEVELS IN SEMICONDUCTORS | 1981 | 43 | 5 | 20% |
Address terms |
| Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | MONTROUGE TECHNOL | 1 | 50% | 0.1% | 2 |
| 2 | SNCI | 1 | 23% | 0.2% | 3 |
| 3 | ETUD PROD LUMBERGER | 1 | 50% | 0.1% | 1 |
| 4 | INVEST CIENCIAS LICADAS TECNOL AVANZADA | 1 | 50% | 0.1% | 1 |
| 5 | LITHUANIAN BRANCH | 1 | 50% | 0.1% | 1 |
| 6 | LPSES | 1 | 50% | 0.1% | 1 |
| 7 | PHYS SEMICOND COMPOSANTS ELE ON | 0 | 20% | 0.1% | 2 |
| 8 | PHYS SEMICONDUCTEURS | 0 | 33% | 0.1% | 1 |
| 9 | ELECT ELECT ENGN BLOCK S1 | 0 | 25% | 0.1% | 1 |
| 10 | EQUIPE SPE OSCOPIE RAMAN | 0 | 17% | 0.1% | 1 |
Related classes at same level (level 1) |
| Rank | Relatedness score | Related classes |
|---|---|---|
| 1 | 0.0000190618 | EMISSION RATE SPECTRUM//CAPACITANCE TRANSIENTS//DLTS RESOLUTION |
| 2 | 0.0000117979 | DELTA DOPING//SELF CONSISTENTLY//DELTA DOPED QUANTUM WELLS |
| 3 | 0.0000117086 | PSEUDOMORPHIC MODFET//DOUBLE GATE HIGH ELECTRON MOBILITY TRANSISTOR DG HEMT//AC MOBILITY |
| 4 | 0.0000098807 | CD4GESE6//ELECTRICITY PROPERTIES//ELECTROCHEMICAL C V PROFILING |
| 5 | 0.0000097589 | OVAL DEFECTS//SEEIE//GA AS BI SOLUTION |
| 6 | 0.0000090848 | SURFACE AND INTERFACE PHENOMENA//TELECOMMUN ADVANCEMENTS ORG//SENDAI |
| 7 | 0.0000071713 | GAP N//PICOSECOND TIMING RESOLUTION//SI H BOND DISSOCIATION |
| 8 | 0.0000069708 | MAGNET SENSOR//GROUP III V EXCEPT NITRIDES//COPPER VACANCY COMPLEX |
| 9 | 0.0000068551 | EL2//CARBON ACCEPTOR//SEMI INSULATING GALLIUM ARSENIDE |
| 10 | 0.0000065759 | MICROSYST IMICRO//MULTIPHONON RECOMBINATION//EXP ANGEW PHYS |