Class information for: |
Basic class information |
| ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
|---|---|---|---|
| 5569 | 1539 | 20.8 | 66% |
Classes in level above (level 2) |
Terms with highest relevance score |
| Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|---|
| 1 | MISFIT DISLOCATIONS | Author keyword | 10 | 23% | 2% | 38 |
| 2 | GRADED BUFFER LAYER | Author keyword | 6 | 80% | 0% | 4 |
| 3 | DISLOCATION COMPENSATION | Author keyword | 6 | 100% | 0% | 4 |
| 4 | COMPLIANT SUBSTRATES | Author keyword | 4 | 50% | 0% | 6 |
| 5 | STRAIN RELAXATION | Author keyword | 4 | 10% | 2% | 33 |
| 6 | MISMATCHED HETEROEPITAXY | Author keyword | 3 | 50% | 0% | 4 |
| 7 | CRITICAL THICKNESS | Author keyword | 2 | 11% | 1% | 22 |
| 8 | GRADED LAYERS | Author keyword | 2 | 38% | 0% | 5 |
| 9 | MISFIT DISLOCATION | Author keyword | 2 | 11% | 1% | 19 |
| 10 | DCXD | Author keyword | 2 | 67% | 0% | 2 |
Web of Science journal categories |
Author Key Words |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
|---|---|---|---|---|---|---|---|
| 1 | MISFIT DISLOCATIONS | 10 | 23% | 2% | 38 | Search MISFIT+DISLOCATIONS | Search MISFIT+DISLOCATIONS |
| 2 | GRADED BUFFER LAYER | 6 | 80% | 0% | 4 | Search GRADED+BUFFER+LAYER | Search GRADED+BUFFER+LAYER |
| 3 | DISLOCATION COMPENSATION | 6 | 100% | 0% | 4 | Search DISLOCATION+COMPENSATION | Search DISLOCATION+COMPENSATION |
| 4 | COMPLIANT SUBSTRATES | 4 | 50% | 0% | 6 | Search COMPLIANT+SUBSTRATES | Search COMPLIANT+SUBSTRATES |
| 5 | STRAIN RELAXATION | 4 | 10% | 2% | 33 | Search STRAIN+RELAXATION | Search STRAIN+RELAXATION |
| 6 | MISMATCHED HETEROEPITAXY | 3 | 50% | 0% | 4 | Search MISMATCHED+HETEROEPITAXY | Search MISMATCHED+HETEROEPITAXY |
| 7 | CRITICAL THICKNESS | 2 | 11% | 1% | 22 | Search CRITICAL+THICKNESS | Search CRITICAL+THICKNESS |
| 8 | GRADED LAYERS | 2 | 38% | 0% | 5 | Search GRADED+LAYERS | Search GRADED+LAYERS |
| 9 | MISFIT DISLOCATION | 2 | 11% | 1% | 19 | Search MISFIT+DISLOCATION | Search MISFIT+DISLOCATION |
| 10 | DCXD | 2 | 67% | 0% | 2 | Search DCXD | Search DCXD |
Key Words Plus |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | MISFIT DISLOCATIONS | 91 | 27% | 19% | 295 |
| 2 | CRITICAL LAYER THICKNESS | 47 | 39% | 6% | 96 |
| 3 | GEXSI1 X SI100 HETEROSTRUCTURES | 41 | 90% | 1% | 18 |
| 4 | STRAIN RELAXATION | 31 | 20% | 9% | 137 |
| 5 | THREADING DISLOCATION | 29 | 52% | 3% | 39 |
| 6 | CRITICAL THICKNESS | 28 | 26% | 6% | 95 |
| 7 | SI1 XGEX SI HETEROSTRUCTURES | 22 | 51% | 2% | 31 |
| 8 | PSEUDOMORPHIC STRUCTURES | 20 | 66% | 1% | 19 |
| 9 | MISFIT DISLOCATION | 10 | 37% | 1% | 22 |
| 10 | MISFIT | 10 | 13% | 4% | 67 |
Journals |
Reviews |
| Title | Publ. year | Cit. | Active references | % act. ref. to same field |
|---|---|---|---|---|
| Misfit strain and misfit dislocations in lattice mismatched epitaxial layers and other systems | 1997 | 133 | 93 | 41% |
| THE MECHANICS OF DISLOCATIONS IN STRAINED-LAYER SEMICONDUCTOR-MATERIALS | 1994 | 72 | 34 | 76% |
| Strain and strain relaxation in semiconductors | 1997 | 86 | 104 | 49% |
| MISFIT DISLOCATIONS IN LATTICE-MISMATCHED EPITAXIAL-FILMS | 1992 | 152 | 73 | 67% |
| Plastic relaxation and relaxed buffer layers for semiconductor epitaxy | 1996 | 116 | 207 | 42% |
| Silicon-germanium epilayers: physical fundamentals of growing strained and fully relaxed heterostructures | 2001 | 16 | 108 | 45% |
| Ge-on-Si films obtained by epitaxial growing: edge dislocations and their participation in plastic relaxation | 2012 | 9 | 77 | 30% |
| Misfit dislocations in nanocomposites with quantum dots, nanowires and their ensembles | 2006 | 19 | 167 | 24% |
| Strain relaxation in III-V semiconductor heterostructures | 1999 | 9 | 25 | 96% |
| Compliant substrate technology: Integration of mismatched materials for opto-electronic applications | 2000 | 21 | 111 | 36% |
Address terms |
| Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | ENGN SEMICOND MAT | 1 | 31% | 0.3% | 4 |
| 2 | MOL BEAM EPITAXY | 1 | 38% | 0.2% | 3 |
| 3 | SOLAR POWER | 1 | 24% | 0.3% | 4 |
| 4 | ANAL TESTING NONFERROUS MET ELECT MA | 1 | 21% | 0.2% | 3 |
| 5 | CC MAT | 1 | 50% | 0.1% | 1 |
| 6 | CENT S COUNCIL | 1 | 50% | 0.1% | 1 |
| 7 | MARCONI MAT TECHNOL | 1 | 50% | 0.1% | 1 |
| 8 | MUNCHEN | 1 | 50% | 0.1% | 1 |
| 9 | WILSON 277 | 1 | 50% | 0.1% | 1 |
| 10 | MARCO FOCUS FUNCT ENGINEERED NANO ARCHITECTON | 1 | 29% | 0.1% | 2 |
Related classes at same level (level 1) |
| Rank | Relatedness score | Related classes |
|---|---|---|
| 1 | 0.0000168064 | IN082GA018AS//SHORT WAVELENGTH INFRARED//INFRARED IMAGING MAT DETECTORS |
| 2 | 0.0000162703 | STRAINED SI//SIGE//STRAINED SILICON |
| 3 | 0.0000149296 | GAAS ON SI//GAAS SI//GAP ON SI |
| 4 | 0.0000137243 | ANAL STRUCT MAT//UNITE RECH PHYS SOLIDE//TECHNOL SILICIUM |
| 5 | 0.0000130946 | FAK PHYS CHEM//INDIUM SEGREGATION//IN DESORPTION |
| 6 | 0.0000101033 | CHANNELED PARTICLE//NONEQUILIBRIUM STATISTICAL THERMODYNAMICS//QUASITEMPERATURE |
| 7 | 0.0000096540 | STRAINED SI1 XGEX SI QUANTUM WELLS//SI SIGE SUPERLATTICE//STRAINED SIGE SI |
| 8 | 0.0000093787 | NEGATIVE EFFECTIVE MASS//GAASP QUANTUM WELLS//III V SEMICONDUCTOR HETEROJUNCTIONS |
| 9 | 0.0000087862 | INASP INP//INASP//QUANTUM PHOTOVOLTA GRP |
| 10 | 0.0000087533 | HEAVY B DOPING//CONCEPTS DISPOSITIFS PHOTON//UMR 6630 |