Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
5514 | 1546 | 26.9 | 79% |
Classes in level above (level 2) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
666 | 12577 | SCANNING TUNNELING MICROSCOPY//ATOM WI LAYERS//VICINAL SINGLE CRYSTAL SURFACES |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | HYDROGEN SURFACTANT | Author keyword | 11 | 100% | 0% | 6 |
2 | AUSTRALIAN COUNCIL EXCELLENCE QUANTUM COM | Address | 8 | 48% | 1% | 12 |
3 | EXCELLENCE QUANTUM COMPUTAT COMMUN TECHNOL | Address | 6 | 40% | 1% | 12 |
4 | MANA SATELLITE | Address | 5 | 38% | 1% | 10 |
5 | RAISED EXTENSION | Author keyword | 4 | 75% | 0% | 3 |
6 | DIHYDRIDE | Author keyword | 3 | 50% | 0% | 5 |
7 | HYDROGEN ADSORPTION STATE | Author keyword | 3 | 100% | 0% | 3 |
8 | DISILANE | Author keyword | 3 | 16% | 1% | 18 |
9 | SI100 | Author keyword | 3 | 11% | 1% | 23 |
10 | EXCELLENCE QUANTUM COMP TECHNOL | Address | 2 | 19% | 1% | 11 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | HYDROGEN SURFACTANT | 11 | 100% | 0% | 6 | Search HYDROGEN+SURFACTANT | Search HYDROGEN+SURFACTANT |
2 | RAISED EXTENSION | 4 | 75% | 0% | 3 | Search RAISED+EXTENSION | Search RAISED+EXTENSION |
3 | DIHYDRIDE | 3 | 50% | 0% | 5 | Search DIHYDRIDE | Search DIHYDRIDE |
4 | HYDROGEN ADSORPTION STATE | 3 | 100% | 0% | 3 | Search HYDROGEN+ADSORPTION+STATE | Search HYDROGEN+ADSORPTION+STATE |
5 | DISILANE | 3 | 16% | 1% | 18 | Search DISILANE | Search DISILANE |
6 | SI100 | 3 | 11% | 1% | 23 | Search SI100 | Search SI100 |
7 | DIMER DANGLING BOND | 2 | 67% | 0% | 2 | Search DIMER+DANGLING+BOND | Search DIMER+DANGLING+BOND |
8 | PHOSPHORUS IN SILICON | 2 | 67% | 0% | 2 | Search PHOSPHORUS+IN+SILICON | Search PHOSPHORUS+IN+SILICON |
9 | SI1117X7 SURFACE | 2 | 67% | 0% | 2 | Search SI1117X7+SURFACE | Search SI1117X7+SURFACE |
10 | SI2H6 | 2 | 26% | 0% | 6 | Search SI2H6 | Search SI2H6 |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | MONOHYDRIDE PHASE | 126 | 66% | 8% | 116 |
2 | H 2 DESORPTION | 63 | 78% | 3% | 42 |
3 | PI BONDED DIMERS | 56 | 69% | 3% | 48 |
4 | HYDROGEN DESORPTION | 51 | 43% | 6% | 91 |
5 | SI2H6 | 50 | 39% | 7% | 101 |
6 | DISILANE | 46 | 31% | 8% | 122 |
7 | INTERNAL STATE DISTRIBUTIONS | 27 | 62% | 2% | 28 |
8 | MONOHYDRIDE | 26 | 40% | 3% | 50 |
9 | PHONON ASSISTED STICKING | 23 | 72% | 1% | 18 |
10 | GE SURFACE SEGREGATION | 19 | 60% | 1% | 21 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
Reaction dynamics of H-2 on Si. Ab initio supported model calculations | 2008 | 24 | 156 | 50% |
Dissociative adsorption of molecular hydrogen on silicon surfaces | 2006 | 62 | 192 | 55% |
Hydrogen interaction with clean and modified silicon surfaces | 1999 | 165 | 308 | 39% |
SCANNING-TUNNELING-MICROSCOPY OF THE INTERACTION OF HYDROGEN WITH SILICON SURFACES | 1993 | 263 | 94 | 47% |
Reactions of hydrogen on silicon: Kinetics and dynamics | 2003 | 21 | 80 | 79% |
The interaction of silanes with silicon single crystal surfaces: microscopic processes and structures | 2001 | 49 | 320 | 48% |
Reaction dynamics of H-2 and D-2 on Si(100) and Si(111) | 2001 | 23 | 87 | 69% |
Kinetics and dynamics of hydrogen adsorption and desorption on silicon surfaces | 1996 | 70 | 98 | 64% |
Hydrogen diffusion on silicon surfaces | 2013 | 7 | 116 | 41% |
Desorption related to adsorption of hydrogen via detailed balance on the Si(100) surfaces | 2006 | 12 | 73 | 71% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | AUSTRALIAN COUNCIL EXCELLENCE QUANTUM COM | 8 | 48% | 0.8% | 12 |
2 | EXCELLENCE QUANTUM COMPUTAT COMMUN TECHNOL | 6 | 40% | 0.8% | 12 |
3 | MANA SATELLITE | 5 | 38% | 0.6% | 10 |
4 | EXCELLENCE QUANTUM COMP TECHNOL | 2 | 19% | 0.7% | 11 |
5 | E ORAT MAT ETUD STRUCT CEMES | 2 | 67% | 0.1% | 2 |
6 | AUSTRALIAN COUNCIL EXCELLENCE QUANTUM COMPUTA | 1 | 100% | 0.1% | 2 |
7 | SITD MA S | 1 | 100% | 0.1% | 2 |
8 | SOLID STATE ELECT MICROELECT | 1 | 50% | 0.1% | 2 |
9 | CNRSUP A 7014 | 1 | 40% | 0.1% | 2 |
10 | GNS MANA SATELLITE | 1 | 40% | 0.1% | 2 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000195062 | GE001//C4 X 2//C4X2 |
2 | 0.0000192599 | PHYSICOCHIM MOLEC ORSAY//SURFACE STRUCTURE AND ROUGHNESS//DESORPTION INDUCED BY ELECTRON STIMULATION |
3 | 0.0000188026 | ATOMIC LAYER DOPING//SI EPITAXIAL GROWTH//GERMANIUM SILICON COMPOUNDS |
4 | 0.0000173128 | ORGANIC SEMICONDUCTOR INTERFACE//SI100//GE100 |
5 | 0.0000154428 | SYNCHROTRON RADIATION STIMULATED ETCHING//SYNCHROTRON RADIATION EXCITED GROWTH//VACUUM UV PHOTOSCI |
6 | 0.0000145141 | SID4//DEUTERIUM D ANNEALING//TRAP CREATION |
7 | 0.0000128315 | SURFACTANT MEDIATED EPITAXY//BI NANOLINES//SI100 2X1 SB |
8 | 0.0000114151 | LATERAL CRYSTALLINE GROWTH//ACCELERATORS//ION INDUCED DEFECTS |
9 | 0.0000097565 | HYDROGEN TERMINATION//SHIZUOKA TORY//LAYER BY LAYER OXIDATION |
10 | 0.0000094745 | STRAINED SI1 XGEX SI QUANTUM WELLS//SI SIGE SUPERLATTICE//STRAINED SIGE SI |