Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
5427 | 1558 | 19.3 | 63% |
Classes in level above (level 2) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
138 | 22619 | IEEE TRANSACTIONS ON ELECTRON DEVICES//IEEE ELECTRON DEVICE LETTERS//SOLID-STATE ELECTRONICS |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | BORON PENETRATION | Author keyword | 31 | 58% | 2% | 35 |
2 | REMOTE PLASMA NITRIDATION RPN | Author keyword | 9 | 83% | 0% | 5 |
3 | SI NITRIDE | Author keyword | 8 | 75% | 0% | 6 |
4 | SI OXYNITRIDE | Author keyword | 8 | 75% | 0% | 6 |
5 | NITRIDED OXIDE | Author keyword | 7 | 48% | 1% | 11 |
6 | OXYNITRIDATION | Author keyword | 6 | 50% | 1% | 9 |
7 | OXYNITRIDE | Author keyword | 5 | 13% | 3% | 40 |
8 | PLASMA OXYNITRIDATION | Author keyword | 4 | 75% | 0% | 3 |
9 | TRENCH DRAM | Author keyword | 4 | 75% | 0% | 3 |
10 | DECOUPLED PLASMA NITRIDATION | Author keyword | 4 | 56% | 0% | 5 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | BORON PENETRATION | 31 | 58% | 2% | 35 | Search BORON+PENETRATION | Search BORON+PENETRATION |
2 | REMOTE PLASMA NITRIDATION RPN | 9 | 83% | 0% | 5 | Search REMOTE+PLASMA+NITRIDATION+RPN | Search REMOTE+PLASMA+NITRIDATION+RPN |
3 | SI NITRIDE | 8 | 75% | 0% | 6 | Search SI+NITRIDE | Search SI+NITRIDE |
4 | SI OXYNITRIDE | 8 | 75% | 0% | 6 | Search SI+OXYNITRIDE | Search SI+OXYNITRIDE |
5 | NITRIDED OXIDE | 7 | 48% | 1% | 11 | Search NITRIDED+OXIDE | Search NITRIDED+OXIDE |
6 | OXYNITRIDATION | 6 | 50% | 1% | 9 | Search OXYNITRIDATION | Search OXYNITRIDATION |
7 | OXYNITRIDE | 5 | 13% | 3% | 40 | Search OXYNITRIDE | Search OXYNITRIDE |
8 | PLASMA OXYNITRIDATION | 4 | 75% | 0% | 3 | Search PLASMA+OXYNITRIDATION | Search PLASMA+OXYNITRIDATION |
9 | TRENCH DRAM | 4 | 75% | 0% | 3 | Search TRENCH+DRAM | Search TRENCH+DRAM |
10 | DECOUPLED PLASMA NITRIDATION | 4 | 56% | 0% | 5 | Search DECOUPLED+PLASMA+NITRIDATION | Search DECOUPLED+PLASMA+NITRIDATION |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | N2O AMBIENT | 52 | 82% | 2% | 31 |
2 | REOXIDIZED NITRIDED OXIDES | 39 | 80% | 2% | 24 |
3 | INTERFACIAL NITROGEN | 38 | 93% | 1% | 14 |
4 | BORON PENETRATION | 36 | 52% | 3% | 49 |
5 | RAPID THERMAL OXIDATION | 28 | 54% | 2% | 37 |
6 | NITRIDED OXIDE | 24 | 91% | 1% | 10 |
7 | OXIDE SI100 INTERFACE | 23 | 86% | 1% | 12 |
8 | NITRIDED OXIDES | 20 | 63% | 1% | 20 |
9 | INCORPORATED NITROGEN | 18 | 89% | 1% | 8 |
10 | OXIDIZING SI | 17 | 79% | 1% | 11 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
Ultrathin (< 4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits | 2001 | 531 | 522 | 20% |
Growth and characterization of ultrathin nitrided silicon oxide films | 1999 | 133 | 121 | 60% |
Atomic transport during growth of ultrathin dielectrics on silicon | 1999 | 91 | 150 | 45% |
Structure of silicon/oxide and nitride/oxide interfaces | 2009 | 8 | 36 | 17% |
On implant-based multiple gate oxide schemes for system-on-chip integration | 2003 | 6 | 64 | 59% |
PECVD based silicon oxynitride thin films for nano photonic on chip interconnects applications | 2013 | 2 | 32 | 22% |
Preparation of device-quality SiO2 thin films by remote plasma-enhanced chemical vapour deposition (PECVD): Applications in metal-oxide-semiconductor (MOS) devices | 1996 | 14 | 27 | 63% |
Structural characterization of crystalline and non-crystalline materials - A brief background of current requirements | 2002 | 0 | 9 | 33% |
Anomalous grazing-incidence X-ray reflection | 2002 | 0 | 8 | 25% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | DIFFUS | 4 | 46% | 0.4% | 6 |
2 | LEMEAMED | 2 | 43% | 0.2% | 3 |
3 | PHYS CHEM SUR E INTER E | 2 | 43% | 0.2% | 3 |
4 | ADV LSI DEV | 1 | 50% | 0.1% | 2 |
5 | CHEM ENGN MC110 | 1 | 50% | 0.1% | 2 |
6 | SOFTWARE ADV MAT PROC | 1 | 100% | 0.1% | 2 |
7 | WP ENGN DEV | 1 | 50% | 0.1% | 2 |
8 | MICROELECT MAT STRUCT | 1 | 21% | 0.3% | 5 |
9 | IIS B | 1 | 40% | 0.1% | 2 |
10 | SPA DEV ENGN | 1 | 33% | 0.1% | 2 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000219329 | POLYOXIDE//INTERPOLY OXIDE//NONPLANAR POLYOXIDE |
2 | 0.0000157373 | INTERFACIAL SILICON EMISSION//SILICON OXIDATION//LOW TEMPERATURE SILICON OXIDATION |
3 | 0.0000148990 | STRESS INDUCED LEAKAGE CURRENT//SOFT BREAKDOWN//DIELECTRIC BREAKDOWN BD |
4 | 0.0000140085 | SILICON OXYNITRIDE//SILICON NITRIDE FILMS//CONDUCTANCE TRANSIENTS |
5 | 0.0000121280 | SID4//DEUTERIUM D ANNEALING//TRAP CREATION |
6 | 0.0000103896 | DIRECT TUNNELING//QUANTUM MECHANICAL EFFECTS QMES//WAVE FUNCTION PENETRATION |
7 | 0.0000098999 | NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI//NEGATIVE BIAS TEMPERATURE INSTABILITY//CHRISTIAN DOPPLER TCAD |
8 | 0.0000075896 | POLY SIGE//POLY SI1 XGEX//POLYCRYSTALLINE SILICON GERMANIUM |
9 | 0.0000074862 | BULK AND INTERFACE STATES//NANO TRANSISTOR//VACANCY FORMATION ENERGY |
10 | 0.0000074145 | OXIDE TRAPPED CHARGE//ELDRS//TOTAL IONIZING DOSE |