Class information for:
Level 1: FUJIMI KU//GAAS OXIDE//REACTIVE ION BEAM ETCHING

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
5395 1562 17.7 71%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
1317 8022 ELECT DEVICES MAT TECHNOL//PLASMA ETCHING//SIO2 ETCHING

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 FUJIMI KU Address 17 100% 1% 8
2 GAAS OXIDE Author keyword 6 80% 0% 4
3 REACTIVE ION BEAM ETCHING Author keyword 5 30% 1% 13
4 NANO TECHNOL PLICAT Address 4 75% 0% 3
5 SOLID SOURCE Author keyword 4 75% 0% 3
6 ECR RIBE Author keyword 3 57% 0% 4
7 IN SITU EB LITHOGRAPHY Author keyword 3 100% 0% 3
8 INSITU PROCESS Author keyword 3 100% 0% 3
9 GAAS SUBSTRATE REMOVAL Author keyword 2 67% 0% 2
10 NANO ENG Address 2 67% 0% 2

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class		 LCSH search Wikipedia search
1 GAAS OXIDE 6 80% 0% 4 Search GAAS+OXIDE Search GAAS+OXIDE
2 REACTIVE ION BEAM ETCHING 5 30% 1% 13 Search REACTIVE+ION+BEAM+ETCHING Search REACTIVE+ION+BEAM+ETCHING
3 SOLID SOURCE 4 75% 0% 3 Search SOLID+SOURCE Search SOLID+SOURCE
4 ECR RIBE 3 57% 0% 4 Search ECR+RIBE Search ECR+RIBE
5 IN SITU EB LITHOGRAPHY 3 100% 0% 3 Search IN+SITU+EB+LITHOGRAPHY Search IN+SITU+EB+LITHOGRAPHY
6 INSITU PROCESS 3 100% 0% 3 Search INSITU+PROCESS Search INSITU+PROCESS
7 GAAS SUBSTRATE REMOVAL 2 67% 0% 2 Search GAAS+SUBSTRATE+REMOVAL Search GAAS+SUBSTRATE+REMOVAL
8 SIDEWALL RECOMBINATION 2 67% 0% 2 Search SIDEWALL+RECOMBINATION Search SIDEWALL+RECOMBINATION
9 CL 2 GAS ETCHING 2 50% 0% 3 Search CL+2+GAS+ETCHING Search CL+2+GAS+ETCHING
10 BCL3 N 2 1 100% 0% 2 Search BCL3+N+2 Search BCL3+N+2

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 CH4 H2 AR 67 87% 2% 33
2 SURFACE INDUCED DAMAGE 23 86% 1% 12
3 BURIED HETEROSTRUCTURE LASER 17 70% 1% 14
4 ETCHING INDUCED DAMAGE 17 45% 2% 28
5 CL2 16 26% 4% 55
6 CHLORINE PLASMA 15 71% 1% 12
7 CL 2 XE 11 100% 0% 6
8 CL 2 H 2 11 78% 0% 7
9 ALGAAS 10 10% 6% 90
10 MODULATED ION BEAM 8 60% 1% 9

Journals

Reviews


Title Publ. year Cit. Active references % act. ref.
to same field
Fundamental studies of halogen reactions with III-V semiconductor surfaces 1996 41 123 73%
SCIENCE OF DRY-ETCHING OF III-V-MATERIALS 1994 22 53 87%
Review: Back-side via hole etching process for grounding GaAs based monolithic microwave integrated circuits 2005 5 37 92%
High ion density dry etching of compound semiconductors 1996 15 73 77%
REACTIVE ION ETCHING OF III-V SEMICONDUCTORS 1994 15 89 83%
In situ electron-beam processing for GaAs/AlGaAs nanostructure fabrications 1996 5 30 60%
PLASMA-ETCHING OF III-V SEMICONDUCTOR THIN-FILMS 1992 6 43 79%
Damage in III-V semiconductors from very low-energy process plasmas 2000 0 42 60%
Inductively coupled plasma and electron cyclotron resonance plasma etching of an InGaAlP compound semiconductor system 1998 0 32 44%
SURFACE-CHEMISTRY ON SEMICONDUCTORS STUDIED BY MOLECULAR-BEAM REACTIVE SCATTERING 1994 4 306 13%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ.
in class
1 FUJIMI KU 17 100% 0.5% 8
2 NANO TECHNOL PLICAT 4 75% 0.2% 3
3 NANO ENG 2 67% 0.1% 2
4 BIOMAT ANAL 2 50% 0.2% 3
5 SEMICOND MEMS PROC 2 22% 0.5% 8
6 IMAGING ADV NANOTECHNOL 1 100% 0.1% 2
7 PLASMAS COUCHES MINCES 1 10% 0.6% 9
8 FTRD 1 25% 0.2% 3
9 EPSRC 3V TECHNOL 1 50% 0.1% 1
10 INTER MAT ENGN PROGRAM 1 50% 0.1% 1

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000179290 SOCIOTECHNO SCI TECHNOL//N GAN//GALLIUM HYDROXIDE
2 0.0000161079 ATOMIC HYDROGEN CLEANING//ECR HYDROGEN PLASMA//IN SITU VACUUM PROCESS
3 0.0000124770 HIGH RESOLUTION X RAY MICROSCOPY//INNER SHELL ELECTRON EXCITATION//INTENSE X RAYS
4 0.0000114454 PHYSICOCHIM MOLEC ORSAY//SURFACE STRUCTURE AND ROUGHNESS//DESORPTION INDUCED BY ELECTRON STIMULATION
5 0.0000112027 CHEMICAL DRY ETCHING//PLASMA NANOTECHNOL PLANT//AFTER CORROSION
6 0.0000094554 ELECTROLYTIC COPPER ADDITION//BCL3 PLASMA//FIS CHIM SUPERFICI INTER E
7 0.0000088896 INDUCTIVELY COUPLED PLASMA REACTIVE ION ETCHING//TI HARD MASK//CL 2 BASED PLASMA
8 0.0000078534 SEMICONDUCTOR RING LASER SRL//SEMICONDUCTOR RING LASER//SEMICONDUCTOR RING LASERS SRLS
9 0.0000071910 ATOMIC LAYER ETCHING//GATE CHARGING//NEUTRAL BEAM ETCHING
10 0.0000055999 ECR PLASMA//UNIFORM PLASMA//MAGNETIC MULTIPOLE FIELD