Class information for: |
Basic class information |
| ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
|---|---|---|---|
| 5266 | 1581 | 16.0 | 69% |
Classes in level above (level 2) |
Terms with highest relevance score |
| Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|---|
| 1 | ADV MAT PHOTON GRP | Address | 13 | 69% | 1% | 11 |
| 2 | MICROPHOTON BRANCH | Address | 9 | 64% | 1% | 9 |
| 3 | ANTIMONIDE BASED LASERS | Author keyword | 8 | 100% | 0% | 5 |
| 4 | COLD SHIELDING | Author keyword | 6 | 100% | 0% | 4 |
| 5 | PHOTODIODE STRUCTURES | Author keyword | 6 | 100% | 0% | 4 |
| 6 | CNRSUMR 5507 | Address | 5 | 63% | 0% | 5 |
| 7 | INTERBAND CASCADE LASERS | Author keyword | 5 | 50% | 0% | 7 |
| 8 | INFRARED LEDS | Author keyword | 4 | 67% | 0% | 4 |
| 9 | MID INFRARED LASERS | Author keyword | 4 | 22% | 1% | 17 |
| 10 | UMR 5214 | Address | 4 | 13% | 2% | 30 |
Web of Science journal categories |
Author Key Words |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
|---|---|---|---|---|---|---|---|
| 1 | ANTIMONIDE BASED LASERS | 8 | 100% | 0% | 5 | Search ANTIMONIDE+BASED+LASERS | Search ANTIMONIDE+BASED+LASERS |
| 2 | COLD SHIELDING | 6 | 100% | 0% | 4 | Search COLD+SHIELDING | Search COLD+SHIELDING |
| 3 | PHOTODIODE STRUCTURES | 6 | 100% | 0% | 4 | Search PHOTODIODE+STRUCTURES | Search PHOTODIODE+STRUCTURES |
| 4 | INTERBAND CASCADE LASERS | 5 | 50% | 0% | 7 | Search INTERBAND+CASCADE+LASERS | Search INTERBAND+CASCADE+LASERS |
| 5 | INFRARED LEDS | 4 | 67% | 0% | 4 | Search INFRARED+LEDS | Search INFRARED+LEDS |
| 6 | MID INFRARED LASERS | 4 | 22% | 1% | 17 | Search MID+INFRARED+LASERS | Search MID+INFRARED+LASERS |
| 7 | ANTIMONIDE LASER | 4 | 75% | 0% | 3 | Search ANTIMONIDE+LASER | Search ANTIMONIDE+LASER |
| 8 | INTERBAND CASCADE LASER ICL | 4 | 75% | 0% | 3 | Search INTERBAND+CASCADE+LASER+ICL | Search INTERBAND+CASCADE+LASER+ICL |
| 9 | MIDINFRARED LASERS | 4 | 56% | 0% | 5 | Search MIDINFRARED+LASERS | Search MIDINFRARED+LASERS |
| 10 | NEGATIVE LUMINESCENCE | 4 | 31% | 1% | 11 | Search NEGATIVE+LUMINESCENCE | Search NEGATIVE+LUMINESCENCE |
Key Words Plus |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | INTERBAND CASCADE LASERS | 24 | 56% | 2% | 29 |
| 2 | INAS1 X YSBXPY | 17 | 100% | 1% | 8 |
| 3 | LED OPERATION | 11 | 100% | 0% | 6 |
| 4 | NARROW RIDGE | 9 | 64% | 1% | 9 |
| 5 | 35 MU M | 9 | 48% | 1% | 14 |
| 6 | INP1 XSBX | 8 | 70% | 0% | 7 |
| 7 | SELF ASSEMBLED INSB | 8 | 70% | 0% | 7 |
| 8 | II HETEROJUNCTIONS | 8 | 62% | 1% | 8 |
| 9 | INAS INGASB | 7 | 57% | 1% | 8 |
| 10 | MIDINFRARED LASERS | 7 | 36% | 1% | 15 |
Journals |
Reviews |
| Title | Publ. year | Cit. | Active references | % act. ref. to same field |
|---|---|---|---|---|
| Light-emitting diodes based on GaSb alloys for the 1.6-4.4 mu m mid-infrared spectral range | 2005 | 17 | 18 | 83% |
| Interface-induced optical and transport phenomena in type II broken-gap single heterojunctions | 2004 | 29 | 61 | 56% |
| Negative luminescence and devices based on this phenomenon | 2007 | 5 | 24 | 83% |
| A review of energy bandgap engineering in III-V semiconductor alloys for mid-infrared laser applications | 2007 | 24 | 82 | 29% |
| Mid-Infrared Semiconductor Lasers: A Review | 2012 | 5 | 152 | 46% |
| Mid-infrared 2-5 mu m heterojunction laser diodes | 2003 | 11 | 108 | 66% |
| TYPE-II HETEROJUNCTIONS IN THE GAINASSB-GASB SYSTEM | 1994 | 84 | 54 | 41% |
| Mid-infrared lasers fabricated from III-V compound semiconductors | 1996 | 5 | 22 | 73% |
| InAsSb/InAsSbP double heterostructure lasers for 3-4 mu m spectral range | 2007 | 0 | 6 | 50% |
| Suppression of non-radiative processes in semiconductor mid-infrared emitters and detectors | 1997 | 7 | 173 | 25% |
Address terms |
| Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | ADV MAT PHOTON GRP | 13 | 69% | 0.7% | 11 |
| 2 | MICROPHOTON BRANCH | 9 | 64% | 0.6% | 9 |
| 3 | CNRSUMR 5507 | 5 | 63% | 0.3% | 5 |
| 4 | UMR 5214 | 4 | 13% | 1.9% | 30 |
| 5 | ELECT SUD | 4 | 13% | 1.8% | 28 |
| 6 | CN 5300 | 3 | 100% | 0.2% | 3 |
| 7 | CODE 5613 | 3 | 100% | 0.2% | 3 |
| 8 | SPACE VACUUM EPITAXY | 2 | 17% | 0.8% | 13 |
| 9 | PHYS SEMICOND MICROELECT | 2 | 21% | 0.6% | 9 |
| 10 | MALVERN TECHNOL | 2 | 16% | 0.8% | 12 |
Related classes at same level (level 1) |
| Rank | Relatedness score | Related classes |
|---|---|---|
| 1 | 0.0000229761 | GASB//GALLIUM ANTIMONIDE//GAINASSB |
| 2 | 0.0000173728 | INAS GASB//INFRARED SENSORS//QUANTUM DEVICES |
| 3 | 0.0000164528 | SEMICOND PHYS NANOSTRUCT//MELT EPITAXY//INSB |
| 4 | 0.0000105171 | IN082GA018AS//SHORT WAVELENGTH INFRARED//INFRARED IMAGING MAT DETECTORS |
| 5 | 0.0000103940 | EFFECTIVE BLACKBODY TEMPERATURE//INFRARED SIGNAL RADIANCE//STIMULATED INFRARED EMISSION |
| 6 | 0.0000085094 | QUANTUM CASCADE LASERS//QUANTUM CASCADE LASERS QCLS//QUANTUM CASCADE LASER |
| 7 | 0.0000059918 | GAASSB//PHOTON INFORMAT ENGN//NON MARKOVIAN GAIN MODEL |
| 8 | 0.0000058109 | VERTICAL EXTERNAL CAVITY SURFACE EMITTING LASER VECSEL//SEMICONDUCTOR DISK LASER//VERTICAL EXTERNAL CAVITY SURFACE EMITTING LASERS VECSELS |
| 9 | 0.0000057610 | QUANTUM WELL LASERS//ANTI GUIDING FACTOR//MULTIQUANTUM WELL LASERS |
| 10 | 0.0000050113 | CATASTROPHIC OPTICAL DEGRADATION//THYRISTOR HETEROSTRUCTURE//OPTOELECT TECHNOL DEV |