Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
5069 | 1611 | 15.1 | 37% |
Classes in level above (level 2) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
1993 | 5054 | NANOELECT GIGASCALE SYST//ELECTROSTATIC DISCHARGE ESD//SILICON CONTROLLED RECTIFIER SCR |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | INSULATED GATE BIPOLAR TRANSISTOR IGBT | Author keyword | 35 | 43% | 4% | 62 |
2 | LATERAL INSULATED GATE BIPOLAR TRANSISTOR LIGBT | Author keyword | 23 | 86% | 1% | 12 |
3 | INSULATED GATE BIPOLAR TRANSISTORS IGBTS | Author keyword | 14 | 48% | 1% | 21 |
4 | IGBT | Author keyword | 13 | 14% | 5% | 88 |
5 | DYNAMIC AVALANCHE | Author keyword | 13 | 69% | 1% | 11 |
6 | LATERAL INSULATED GATE BIPOLAR TRANSISTOR | Author keyword | 12 | 86% | 0% | 6 |
7 | INSULATED GATE BIPOLAR TRANSISTOR IGBT MODEL | Author keyword | 11 | 100% | 0% | 6 |
8 | INSULATED GATE BIPOLAR TRANSISTOR | Author keyword | 10 | 33% | 2% | 25 |
9 | POWER SEMICONDUCTOR DEVICES | Author keyword | 10 | 18% | 3% | 48 |
10 | GATE COMMUTATED THYRISTOR GCT | Author keyword | 9 | 83% | 0% | 5 |
Web of Science journal categories |
Author Key Words |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | IGBT | 35 | 44% | 4% | 60 |
2 | IGBT MODULES | 25 | 58% | 2% | 29 |
3 | IGBTS | 20 | 39% | 3% | 41 |
4 | INSULATED GATE TRANSISTORS | 18 | 89% | 0% | 8 |
5 | GATE BIPOLAR TRANSISTOR | 15 | 71% | 1% | 12 |
6 | EMITTER SWITCHED THYRISTOR | 15 | 77% | 1% | 10 |
7 | DEVICE RELIABILITY | 12 | 86% | 0% | 6 |
8 | IGBT MODEL | 12 | 86% | 0% | 6 |
9 | DYNAMIC AVALANCHE | 11 | 57% | 1% | 13 |
10 | BIPOLAR MOS TRANSISTOR | 11 | 100% | 0% | 6 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references |
% act. ref. to same field |
---|---|---|---|---|
A review of IGBT models | 2000 | 65 | 26 | 96% |
Status and trends of power semiconductor device models for circuit simulation | 1998 | 53 | 29 | 90% |
Physics-of-Failure Lifetime Prediction Models for Wire Bond Interconnects in Power Electronic Modules | 2013 | 9 | 18 | 50% |
Anode engineering for the insulated gate bipolar transistor - A comparative review | 2007 | 11 | 10 | 90% |
Thermal characteristics analysis of an IGBT using a fiber Bragg grating | 2012 | 4 | 7 | 71% |
Future trend of Si power device | 2014 | 0 | 1 | 100% |
Physics-of-Failure, Condition Monitoring, and Prognostics of Insulated Gate Bipolar Transistor Modules: A Review | 2015 | 0 | 92 | 73% |
A Review of Si MOS-gated Power Switches and PiN Rectifiers | 2012 | 0 | 20 | 75% |
A study of a new power semiconductor insulated gate bipolar transistor (IGBT) characteristics and its application to automotive ignition | 1997 | 0 | 11 | 64% |
Review of challenges in reliable electric power delivery to remote deep water enhanced oil recovery systems | 2013 | 0 | 14 | 21% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | POWER IND | 6 | 80% | 0.2% | 4 |
2 | RELIABLE POWER ELECT | 6 | 100% | 0.2% | 4 |
3 | ELEKTROPHYS | 4 | 67% | 0.2% | 4 |
4 | AUTOMAT ELE OMAGNETISM INFORMAT ENGN IND | 3 | 32% | 0.5% | 8 |
5 | POWER SEMICOND | 3 | 24% | 0.7% | 11 |
6 | KAI | 3 | 60% | 0.2% | 3 |
7 | SILICON DEVICES INTEGRATED TECHNOL | 2 | 67% | 0.1% | 2 |
8 | UR03ES05 | 2 | 67% | 0.1% | 2 |
9 | ELECT ENGN 50 | 2 | 28% | 0.3% | 5 |
10 | PEG | 1 | 38% | 0.2% | 3 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000163520 | SPECIFIC ON RESISTANCE//BREAKDOWN VOLTAGE BV//LDMOS |
2 | 0.0000133645 | MARINE ELECT//KATEDRA ELEKT MORSKIEJ//SELFHEATING |
3 | 0.0000093658 | NANOSCALE SILVER PASTE//NANOSILVER PASTE//TIANJIN ADV JOINING TECHNOL |
4 | 0.0000090313 | BEAM CHANNEL TRANSISTOR//IMPURITY ENHANCED OXIDATION//BIPOLAR MODE FIELD EFFECT TRANSISTORS BMFETS |
5 | 0.0000087136 | COEFFICIENT OF POTENTIAL//COEFFICIENT OF INDUCTANCE//COEFFICIENTS OF POTENTIAL |
6 | 0.0000084039 | REVERSELY SWITCHED DYNISTOR RSD//POWER SEMICONDUCTOR DIODE SWITCHES//POWER SEMICOND DEVICES |
7 | 0.0000079842 | THERMAL PLACEMENT//DYNAMIC THERMAL MANAGEMENT DTM//TIME CONSTANT SPECTRUM |
8 | 0.0000063018 | 4H SIC//SILICON CARBIDE SIC//BIPOLAR JUNCTION TRANSISTORS BJTS |
9 | 0.0000050443 | ELECTRICAL PASSIVATION OF STRUCTURAL DEFECTS//GAAS DIODE//TRIPLE CRYSTAL DIFFRACTOMETRY |
10 | 0.0000050308 | LIFETIME CONTROL//SEMI INSULATING MATERIALS//POWER DIODES |