Class information for:
Level 1: DOUBLE GATE MOSFET//FINFET//SHORT CHANNEL EFFECTS

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
490 3322 18.2 56%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
138 22619 IEEE TRANSACTIONS ON ELECTRON DEVICES//IEEE ELECTRON DEVICE LETTERS//SOLID-STATE ELECTRONICS

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 DOUBLE GATE MOSFET Author keyword 77 56% 3% 95
2 FINFET Author keyword 68 28% 6% 206
3 SHORT CHANNEL EFFECTS Author keyword 61 42% 3% 111
4 SHORT CHANNEL EFFECTS SCES Author keyword 55 66% 2% 51
5 DOUBLE GATE DG MOSFET Author keyword 38 71% 1% 30
6 JUNCTIONLESS Author keyword 33 57% 1% 39
7 DIBL Author keyword 33 46% 2% 53
8 SURROUNDING GATE MOSFET Author keyword 31 74% 1% 23
9 DOUBLE GATE DG Author keyword 30 53% 1% 40
10 DRAIN INDUCED BARRIER LOWERING DIBL Author keyword 30 47% 1% 48

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class		 LCSH search Wikipedia search
1 DOUBLE GATE MOSFET 77 56% 3% 95 Search DOUBLE+GATE+MOSFET Search DOUBLE+GATE+MOSFET
2 FINFET 68 28% 6% 206 Search FINFET Search FINFET
3 SHORT CHANNEL EFFECTS 61 42% 3% 111 Search SHORT+CHANNEL+EFFECTS Search SHORT+CHANNEL+EFFECTS
4 SHORT CHANNEL EFFECTS SCES 55 66% 2% 51 Search SHORT+CHANNEL+EFFECTS+SCES Search SHORT+CHANNEL+EFFECTS+SCES
5 DOUBLE GATE DG MOSFET 38 71% 1% 30 Search DOUBLE+GATE+DG+MOSFET Search DOUBLE+GATE+DG+MOSFET
6 JUNCTIONLESS 33 57% 1% 39 Search JUNCTIONLESS Search JUNCTIONLESS
7 DIBL 33 46% 2% 53 Search DIBL Search DIBL
8 SURROUNDING GATE MOSFET 31 74% 1% 23 Search SURROUNDING+GATE+MOSFET Search SURROUNDING+GATE+MOSFET
9 DOUBLE GATE DG 30 53% 1% 40 Search DOUBLE+GATE+DG Search DOUBLE+GATE+DG
10 DRAIN INDUCED BARRIER LOWERING DIBL 30 47% 1% 48 Search DRAIN+INDUCED+BARRIER+LOWERING+DIBL Search DRAIN+INDUCED+BARRIER+LOWERING+DIBL

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 SOI MOSFETS 224 48% 10% 346
2 THRESHOLD VOLTAGE MODEL 124 70% 3% 103
3 DG MOSFETS 85 74% 2% 64
4 THRESHOLD VOLTAGE 71 27% 7% 231
5 FINFETS 53 51% 2% 75
6 GATE SOI MOSFETS 48 71% 1% 39
7 SOI MOSFET 47 69% 1% 40
8 DRAIN CURRENT MODEL 44 85% 1% 23
9 DOUBLE GATE MOSFETS 41 53% 2% 54
10 VOLUME INVERSION 36 53% 1% 48

Journals

Reviews


Title Publ. year Cit. Active references % act. ref.
to same field
Multigate transistors as the future of classical metal-oxide-semiconductor field-effect transistors 2011 113 18 67%
A review of core compact models for undoped double-gate SOI MOSFETs 2007 58 25 72%
A Review on Compact Modeling of Multiple-Gate MOSFETs 2009 21 28 100%
Moore's law: the future of Si microelectronics 2006 138 16 38%
Nanoscale CMOS 1999 199 50 30%
Frontiers of silicon-on-insulator 2003 323 73 21%
Beyond the conventional transistor 2002 285 75 19%
A comprehensive review on microwave FinFET modeling for progressing beyond the state of art 2013 6 103 39%
An area efficient body contact for low and high voltage SOI MOSFET devices 2008 6 7 86%
A Review on Modeling the Channel Potential in Multi-Gate MOSFETs 2014 0 9 100%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 NISRC 24 91% 0.3% 10
2 LOW POWER NANOELECT GRP 21 90% 0.3% 9
3 ELECT ENGN DISCIPLINE 21 85% 0.3% 11
4 DEEN DAYAL UPADHYAYA 18 38% 1.1% 37
5 COMPETENCE NANOTECHNOL PHOTON 15 82% 0.3% 9
6 SITD 13 69% 0.3% 11
7 EECS ENG 12 86% 0.2% 6
8 EECS ENGN 11 69% 0.3% 9
9 NANO DEVICE SIMULAT 10 61% 0.3% 11
10 ENGN ELECT ELECT AUTOMAT 10 21% 1.3% 44

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000198875 CAPACITORLESS DRAM//1T DRAM//CAPACITORLESS 1T DRAM
2 0.0000188009 NETWORK COMPUTAT NANOTECHNOL//QUASI BALLISTIC TRANSPORT//JOURNAL OF COMPUTATIONAL ELECTRONICS
3 0.0000171646 NONQUASI STATIC NQS EFFECT//QUCS//RSCE
4 0.0000142185 DEVICE MODELLING GRP//RANDOM DOPANT//DEVICE MODELING GRP
5 0.0000136749 HORIZONTAL CURRENT BIPOLAR TRANSISTOR HCBT//DYNAMIC THRESHOLD MOSFET DTMOS//LATERAL BIPOLAR TRANSISTOR
6 0.0000124365 SCHOTTKY BARRIER SB//DOPANT SEGREGATION DS//SCHOTTKY BARRIER SB MOSFET
7 0.0000122338 CRYOGENIC CMOS//LOW TEMPERATURE ELECTRONICS//LOW TEMPERATURE CIRCUIT
8 0.0000117716 BACK BIAS EFFECT//VERTICAL MOSFET//SURROUNDING GATE TRANSISTOR
9 0.0000113200 DIRECT TUNNELING//QUANTUM MECHANICAL EFFECTS QMES//WAVE FUNCTION PENETRATION
10 0.0000108739 HOT CARRIER//CHANNEL INITIATED SECONDARY ELECTRON CHISEL//HOT CARRIER DEGRADATION