Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
4846 | 1645 | 34.1 | 81% |
Classes in level above (level 2) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
666 | 12577 | SCANNING TUNNELING MICROSCOPY//ATOM WI LAYERS//VICINAL SINGLE CRYSTAL SURFACES |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | ORGANIC SEMICONDUCTOR INTERFACE | Author keyword | 6 | 80% | 0% | 4 |
2 | SI100 | Author keyword | 4 | 14% | 2% | 29 |
3 | GE100 | Author keyword | 4 | 38% | 1% | 9 |
4 | ELECTRON INDUCED REACTION | Author keyword | 4 | 75% | 0% | 3 |
5 | SI1002 X 1 | Author keyword | 4 | 75% | 0% | 3 |
6 | WAT | Address | 3 | 22% | 1% | 14 |
7 | GE001 SURFACE | Author keyword | 3 | 50% | 0% | 4 |
8 | SCI MODELING COMPUTAT | Address | 2 | 23% | 1% | 9 |
9 | DIAMOND 100 | Author keyword | 2 | 67% | 0% | 2 |
10 | EXPT PHYS OBERFLACHENPHYS 4 | Address | 2 | 67% | 0% | 2 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | ORGANIC SEMICONDUCTOR INTERFACE | 6 | 80% | 0% | 4 | Search ORGANIC+SEMICONDUCTOR+INTERFACE | Search ORGANIC+SEMICONDUCTOR+INTERFACE |
2 | SI100 | 4 | 14% | 2% | 29 | Search SI100 | Search SI100 |
3 | GE100 | 4 | 38% | 1% | 9 | Search GE100 | Search GE100 |
4 | ELECTRON INDUCED REACTION | 4 | 75% | 0% | 3 | Search ELECTRON+INDUCED+REACTION | Search ELECTRON+INDUCED+REACTION |
5 | SI1002 X 1 | 4 | 75% | 0% | 3 | Search SI1002+X+1 | Search SI1002+X+1 |
6 | GE001 SURFACE | 3 | 50% | 0% | 4 | Search GE001+SURFACE | Search GE001+SURFACE |
7 | DIAMOND 100 | 2 | 67% | 0% | 2 | Search DIAMOND+100 | Search DIAMOND+100 |
8 | N TERMINATION | 2 | 67% | 0% | 2 | Search N+TERMINATION | Search N+TERMINATION |
9 | SI 100 SURFACE | 2 | 67% | 0% | 2 | Search SI+100+SURFACE | Search SI+100+SURFACE |
10 | SI1117 X 7 SURFACE | 2 | 67% | 0% | 2 | Search SI1117+X+7+SURFACE | Search SI1117+X+7+SURFACE |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | SILICON001 SURFACE | 254 | 91% | 7% | 107 |
2 | CYCLOADDITION CHEMISTRY | 119 | 75% | 5% | 85 |
3 | BINDING STATE CONVERSION | 97 | 90% | 3% | 43 |
4 | SI100 2X1 SURFACE | 62 | 49% | 6% | 92 |
5 | SELF DIRECTED GROWTH | 56 | 58% | 4% | 64 |
6 | SI001 SURFACE | 53 | 28% | 10% | 157 |
7 | BENZENE SI100 | 51 | 91% | 1% | 21 |
8 | SEMICONDUCTOR SURFACES | 49 | 20% | 14% | 226 |
9 | SI100 2X1 | 33 | 35% | 5% | 78 |
10 | SI100 2 X 1 | 31 | 55% | 2% | 39 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
The surface as molecular reagent: organic chemistry at the semiconductor interface | 2003 | 265 | 208 | 74% |
Chemical manipulation of multifunctional hydrocarbons on silicon surfaces | 2008 | 86 | 432 | 72% |
Organic functionalization of group IV semiconductor surfaces: principles, examples, applications, and prospects | 2002 | 419 | 80 | 59% |
Reaction pathways for pyridine adsorption on silicon (001) | 2015 | 1 | 29 | 72% |
Cycloaddition chemistry of organic molecules with semiconductor surfaces | 2000 | 316 | 34 | 88% |
Electronic and Structural Factors in Modification and Functionalization of Clean and Passivated Semiconductor Surfaces with Aromatic Systems | 2009 | 50 | 261 | 49% |
Periodic Trends in Organic Functionalization of Group IV Semiconductor Surfaces | 2010 | 23 | 28 | 68% |
Controlled molecular adsorption on silicon: Laying a foundation for molecular devices | 1999 | 523 | 75 | 40% |
Attachment chemistry of organic molecules on Si(111)-7x7 | 2004 | 86 | 50 | 74% |
Attaching organic layers to semiconductor surfaces | 2002 | 161 | 124 | 78% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | WAT | 3 | 22% | 0.9% | 14 |
2 | SCI MODELING COMPUTAT | 2 | 23% | 0.5% | 9 |
3 | EXPT PHYS OBERFLACHENPHYS 4 | 2 | 67% | 0.1% | 2 |
4 | SOLIDE | 2 | 67% | 0.1% | 2 |
5 | MOL LEVEL INTER E | 2 | 12% | 0.9% | 15 |
6 | MAX SYNCHROTRON | 1 | 100% | 0.1% | 2 |
7 | UMR 7014 | 1 | 19% | 0.4% | 6 |
8 | NANO BIO ELECT DEVICES TEAM | 1 | 40% | 0.1% | 2 |
9 | ATOM MOL PHYS SHANDONG PROV | 1 | 33% | 0.1% | 2 |
10 | ADV ENGN TEAM | 1 | 23% | 0.2% | 3 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000173128 | HYDROGEN SURFACTANT//AUSTRALIAN COUNCIL EXCELLENCE QUANTUM COM//EXCELLENCE QUANTUM COMPUTAT COMMUN TECHNOL |
2 | 0.0000163224 | PHYSICOCHIM MOLEC ORSAY//SURFACE STRUCTURE AND ROUGHNESS//DESORPTION INDUCED BY ELECTRON STIMULATION |
3 | 0.0000162825 | GE001//C4 X 2//C4X2 |
4 | 0.0000152444 | TRANSLATIONAL KINETIC ENERGY//POINT DEFECT GENERATION//OXYGEN MOLECULAR BEAM |
5 | 0.0000150760 | NOYES 210//ORGANIC MONOLAYER//HYDROGEN TERMINATED SILICON |
6 | 0.0000065675 | DAS STRUCTURE//SN GE111//SI111 7 X 7 |
7 | 0.0000063105 | SYNCHROTRON RADIATION STIMULATED ETCHING//SYNCHROTRON RADIATION EXCITED GROWTH//VACUUM UV PHOTOSCI |
8 | 0.0000054959 | MICROMECH SYST//SELF ORGANIZED MASK//CLUSTER SCI GRP |
9 | 0.0000054593 | HYDROGEN TERMINATION//SHIZUOKA TORY//LAYER BY LAYER OXIDATION |
10 | 0.0000052677 | HIGH INDEX SINGLE CRYSTAL SURFACES//SI110//SI113 |