Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
4447 | 1710 | 18.3 | 62% |
Classes in level above (level 2) |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | LEHRSTUHL THEOR FESTKORPERPHYS | Address | 17 | 100% | 0% | 8 |
2 | SEMI INSULATING SIC | Author keyword | 11 | 56% | 1% | 14 |
3 | TEMPERATURE DEPENDENCE OF MAJORITY CARRIER CONCENTRATION | Author keyword | 11 | 100% | 0% | 6 |
4 | ACCEPTOR DENSITY | Author keyword | 8 | 75% | 0% | 6 |
5 | BORON COMPENSATION | Author keyword | 8 | 100% | 0% | 5 |
6 | TEMPERATURE DEPENDENCE OF HOLE CONCENTRATION | Author keyword | 6 | 80% | 0% | 4 |
7 | CARBON VACANCY | Author keyword | 6 | 41% | 1% | 12 |
8 | SEMI INSULATING | Author keyword | 6 | 19% | 2% | 27 |
9 | INTRINSIC DEFECTS | Author keyword | 4 | 18% | 1% | 22 |
10 | CCE CHARACTERISTICS | Author keyword | 4 | 75% | 0% | 3 |
Web of Science journal categories |
Author Key Words |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | 4 H | 31 | 23% | 7% | 118 |
2 | MAJORITY CARRIER CONCENTRATION | 31 | 92% | 1% | 12 |
3 | 6H | 21 | 26% | 4% | 69 |
4 | NEUTRAL SILICON VACANCY | 18 | 89% | 0% | 8 |
5 | DEEP LEVEL IMPURITIES | 17 | 68% | 1% | 15 |
6 | SILICON CARBIDE DETECTORS | 17 | 79% | 1% | 11 |
7 | 4H SILICON CARBIDE | 15 | 30% | 2% | 42 |
8 | NITROGEN PARTICIPATION | 15 | 88% | 0% | 7 |
9 | AL RELATED PHOTOLUMINESCENCE | 14 | 100% | 0% | 7 |
10 | ACCEPTOR DENSITY | 12 | 86% | 0% | 6 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
Deep level centers in silicon carbide: A review | 1999 | 149 | 83 | 65% |
Silicon carbide and its use as a radiation detector material | 2008 | 45 | 101 | 45% |
Radiation resistance of SiC and nuclear-radiation detectors based on SiC films | 2004 | 27 | 89 | 75% |
The effect of irradiation on the properties of SiC and devices based on this compound | 2007 | 13 | 166 | 80% |
Electron paramagnetic resonance of electronic-grade SiC substrates | 2004 | 5 | 41 | 90% |
Alternative electronic parts for multiphonon-broadened photoionization cross sections of deep levels in SiC | 2005 | 4 | 58 | 43% |
Recent advances in defect characterization in 6H-SiC using Deep Level Transient Spectroscopy and Positron Annihilation Spectroscopy | 2000 | 0 | 69 | 68% |
Electronic and Optical Properties of Silicon Carbide Nanotubes and Nanoparticles Studied by Density Functional Theory Calculations: Effect of Doping and Environment | 2012 | 2 | 99 | 21% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | LEHRSTUHL THEOR FESTKORPERPHYS | 17 | 100% | 0.5% | 8 |
2 | UMR 75 88 CNRS | 4 | 75% | 0.2% | 3 |
3 | INAF ASTROPHYS OBSERV | 3 | 100% | 0.2% | 3 |
4 | KNOWLEDGE COMMUNITIES | 3 | 28% | 0.6% | 10 |
5 | PHYS PHYS ELECT | 3 | 29% | 0.5% | 9 |
6 | LIB INFORMAT MEDIA STUDIES | 3 | 18% | 0.8% | 13 |
7 | JAIME ALMERA | 2 | 67% | 0.1% | 2 |
8 | LEHRSTUHL THEORET FESTKORPERPHYS | 2 | 18% | 0.5% | 9 |
9 | FB EXPT PHYS 6 | 1 | 100% | 0.1% | 2 |
10 | LEHRSTUHL F THEOR FESTKORPERPHYS | 1 | 100% | 0.1% | 2 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000225114 | MICROPIPE//SUBLIMATION GROWTH//MICROPIPES |
2 | 0.0000174859 | 4H SIC//SILICON CARBIDE SIC//BIPOLAR JUNCTION TRANSISTORS BJTS |
3 | 0.0000146351 | IN FRANTZEVICH PROBLEMS MAT SCI//GROWTH TECHNIQUES//SEMICOND HETEROSTRUCT |
4 | 0.0000113322 | SICF SIC COMPOSITES//SIC SIC COMPOSITES//SICF SIC COMPOSITE |
5 | 0.0000095170 | 4H SIC MESFET//MESFET//MESFETS |
6 | 0.0000088367 | OHMIC CONTACT//OHMIC CONTACTS//P TYPE SIC |
7 | 0.0000068240 | SCI PROD STATE ENTERPRISE//GRADED GAP ALXGA1 XAS STRUCTURES//GAAS RADIATION DETECTOR |
8 | 0.0000059408 | LOCAL VIBRATION MODES//DIRECT FAST SCARLET 4BS//GAAS C |
9 | 0.0000057584 | 3C SIC//FG NANOTECHNOL//HOLLOW VOID |
10 | 0.0000043712 | REVERSELY SWITCHED DYNISTOR RSD//POWER SEMICONDUCTOR DIODE SWITCHES//POWER SEMICOND DEVICES |