Class information for:
Level 1: LEHRSTUHL THEOR FESTKORPERPHYS//SEMI INSULATING SIC//TEMPERATURE DEPENDENCE OF MAJORITY CARRIER CONCENTRATION

Basic class information

ID Publications Average number
of references
Avg. shr. active
ref. in WoS
4447 1710 18.3 62%



Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)



ID, lev.
above
Publications Label for level above
1001 9900 SILICON CARBIDE//4H SIC//SIC

Terms with highest relevance score



Rank Term Type of term Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ. in
class
1 LEHRSTUHL THEOR FESTKORPERPHYS Address 17 100% 0% 8
2 SEMI INSULATING SIC Author keyword 11 56% 1% 14
3 TEMPERATURE DEPENDENCE OF MAJORITY CARRIER CONCENTRATION Author keyword 11 100% 0% 6
4 ACCEPTOR DENSITY Author keyword 8 75% 0% 6
5 BORON COMPENSATION Author keyword 8 100% 0% 5
6 TEMPERATURE DEPENDENCE OF HOLE CONCENTRATION Author keyword 6 80% 0% 4
7 CARBON VACANCY Author keyword 6 41% 1% 12
8 SEMI INSULATING Author keyword 6 19% 2% 27
9 INTRINSIC DEFECTS Author keyword 4 18% 1% 22
10 CCE CHARACTERISTICS Author keyword 4 75% 0% 3

Web of Science journal categories

Author Key Words



Rank Web of Science journal category Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ. in
class
LCSH search Wikipedia search
1 SEMI INSULATING SIC 11 56% 1% 14 Search SEMI+INSULATING+SIC Search SEMI+INSULATING+SIC
2 TEMPERATURE DEPENDENCE OF MAJORITY CARRIER CONCENTRATION 11 100% 0% 6 Search TEMPERATURE+DEPENDENCE+OF+MAJORITY+CARRIER+CONCENTRATION Search TEMPERATURE+DEPENDENCE+OF+MAJORITY+CARRIER+CONCENTRATION
3 ACCEPTOR DENSITY 8 75% 0% 6 Search ACCEPTOR+DENSITY Search ACCEPTOR+DENSITY
4 BORON COMPENSATION 8 100% 0% 5 Search BORON+COMPENSATION Search BORON+COMPENSATION
5 TEMPERATURE DEPENDENCE OF HOLE CONCENTRATION 6 80% 0% 4 Search TEMPERATURE+DEPENDENCE+OF+HOLE+CONCENTRATION Search TEMPERATURE+DEPENDENCE+OF+HOLE+CONCENTRATION
6 CARBON VACANCY 6 41% 1% 12 Search CARBON+VACANCY Search CARBON+VACANCY
7 SEMI INSULATING 6 19% 2% 27 Search SEMI+INSULATING Search SEMI+INSULATING
8 INTRINSIC DEFECTS 4 18% 1% 22 Search INTRINSIC+DEFECTS Search INTRINSIC+DEFECTS
9 CCE CHARACTERISTICS 4 75% 0% 3 Search CCE+CHARACTERISTICS Search CCE+CHARACTERISTICS
10 CHARGE PARTICLE SPECTROSCOPY 4 75% 0% 3 Search CHARGE+PARTICLE+SPECTROSCOPY Search CHARGE+PARTICLE+SPECTROSCOPY

Key Words Plus



Rank Web of Science journal category Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ. in
class
1 4 H 31 23% 7% 118
2 MAJORITY CARRIER CONCENTRATION 31 92% 1% 12
3 6H 21 26% 4% 69
4 NEUTRAL SILICON VACANCY 18 89% 0% 8
5 DEEP LEVEL IMPURITIES 17 68% 1% 15
6 SILICON CARBIDE DETECTORS 17 79% 1% 11
7 4H SILICON CARBIDE 15 30% 2% 42
8 NITROGEN PARTICIPATION 15 88% 0% 7
9 AL RELATED PHOTOLUMINESCENCE 14 100% 0% 7
10 ACCEPTOR DENSITY 12 86% 0% 6

Journals

Reviews



Title Publ. year Cit. Active references % act. ref.
to same field
Deep level centers in silicon carbide: A review 1999 149 83 65%
Silicon carbide and its use as a radiation detector material 2008 45 101 45%
Radiation resistance of SiC and nuclear-radiation detectors based on SiC films 2004 27 89 75%
The effect of irradiation on the properties of SiC and devices based on this compound 2007 13 166 80%
Electron paramagnetic resonance of electronic-grade SiC substrates 2004 5 41 90%
Alternative electronic parts for multiphonon-broadened photoionization cross sections of deep levels in SiC 2005 4 58 43%
Recent advances in defect characterization in 6H-SiC using Deep Level Transient Spectroscopy and Positron Annihilation Spectroscopy 2000 0 69 68%
Electronic and Optical Properties of Silicon Carbide Nanotubes and Nanoparticles Studied by Density Functional Theory Calculations: Effect of Doping and Environment 2012 2 99 21%

Address terms



Rank Address term Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ. in
class
1 LEHRSTUHL THEOR FESTKORPERPHYS 17 100% 0.5% 8
2 UMR 75 88 CNRS 4 75% 0.2% 3
3 INAF ASTROPHYS OBSERV 3 100% 0.2% 3
4 KNOWLEDGE COMMUNITIES 3 28% 0.6% 10
5 PHYS PHYS ELECT 3 29% 0.5% 9
6 LIB INFORMAT MEDIA STUDIES 3 18% 0.8% 13
7 JAIME ALMERA 2 67% 0.1% 2
8 LEHRSTUHL THEORET FESTKORPERPHYS 2 18% 0.5% 9
9 FB EXPT PHYS 6 1 100% 0.1% 2
10 LEHRSTUHL F THEOR FESTKORPERPHYS 1 100% 0.1% 2

Related classes at same level (level 1)



Rank Relatedness score Related classes
1 0.0000225114 MICROPIPE//SUBLIMATION GROWTH//MICROPIPES
2 0.0000174859 4H SIC//SILICON CARBIDE SIC//BIPOLAR JUNCTION TRANSISTORS BJTS
3 0.0000146351 IN FRANTZEVICH PROBLEMS MAT SCI//GROWTH TECHNIQUES//SEMICOND HETEROSTRUCT
4 0.0000113322 SICF SIC COMPOSITES//SIC SIC COMPOSITES//SICF SIC COMPOSITE
5 0.0000095170 4H SIC MESFET//MESFET//MESFETS
6 0.0000088367 OHMIC CONTACT//OHMIC CONTACTS//P TYPE SIC
7 0.0000068240 SCI PROD STATE ENTERPRISE//GRADED GAP ALXGA1 XAS STRUCTURES//GAAS RADIATION DETECTOR
8 0.0000059408 LOCAL VIBRATION MODES//DIRECT FAST SCARLET 4BS//GAAS C
9 0.0000057584 3C SIC//FG NANOTECHNOL//HOLLOW VOID
10 0.0000043712 REVERSELY SWITCHED DYNISTOR RSD//POWER SEMICONDUCTOR DIODE SWITCHES//POWER SEMICOND DEVICES