Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
4045 | 1782 | 23.5 | 62% |
Classes in level above (level 2) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
372 | 16511 | SWAMP//OXYGEN PRECIPITATION//GROWN IN DEFECT |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | HYDROGEN IN SILICON | Author keyword | 9 | 67% | 0% | 8 |
2 | MULTIVACANCY | Author keyword | 8 | 70% | 0% | 7 |
3 | HYDROGEN IN SI | Author keyword | 6 | 80% | 0% | 4 |
4 | STRESS INDUCED ALIGNMENT | Author keyword | 4 | 75% | 0% | 3 |
5 | HYDROGEN ATOM TREATMENT | Author keyword | 3 | 100% | 0% | 3 |
6 | PLASMA INDUCED DEFECT | Author keyword | 3 | 100% | 0% | 3 |
7 | DOPANT PASSIVATION | Author keyword | 3 | 60% | 0% | 3 |
8 | EXCELLENCE MICROELECT PHOTON | Address | 3 | 60% | 0% | 3 |
9 | IMPURITY COMPLEXES | Author keyword | 3 | 60% | 0% | 3 |
10 | ITTP | Address | 3 | 60% | 0% | 3 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | HYDROGEN IN SILICON | 9 | 67% | 0% | 8 | Search HYDROGEN+IN+SILICON | Search HYDROGEN+IN+SILICON |
2 | MULTIVACANCY | 8 | 70% | 0% | 7 | Search MULTIVACANCY | Search MULTIVACANCY |
3 | HYDROGEN IN SI | 6 | 80% | 0% | 4 | Search HYDROGEN+IN+SI | Search HYDROGEN+IN+SI |
4 | STRESS INDUCED ALIGNMENT | 4 | 75% | 0% | 3 | Search STRESS+INDUCED+ALIGNMENT | Search STRESS+INDUCED+ALIGNMENT |
5 | HYDROGEN ATOM TREATMENT | 3 | 100% | 0% | 3 | Search HYDROGEN+ATOM+TREATMENT | Search HYDROGEN+ATOM+TREATMENT |
6 | PLASMA INDUCED DEFECT | 3 | 100% | 0% | 3 | Search PLASMA+INDUCED+DEFECT | Search PLASMA+INDUCED+DEFECT |
7 | DOPANT PASSIVATION | 3 | 60% | 0% | 3 | Search DOPANT+PASSIVATION | Search DOPANT+PASSIVATION |
8 | IMPURITY COMPLEXES | 3 | 60% | 0% | 3 | Search IMPURITY+COMPLEXES | Search IMPURITY+COMPLEXES |
9 | HYDROGEN MOLECULES | 3 | 29% | 0% | 8 | Search HYDROGEN+MOLECULES | Search HYDROGEN+MOLECULES |
10 | LOCAL VIBRATIONAL MODES | 3 | 23% | 1% | 10 | Search LOCAL+VIBRATIONAL+MODES | Search LOCAL+VIBRATIONAL+MODES |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | CRYSTALLINE SILICON | 47 | 15% | 16% | 293 |
2 | B H COMPLEX | 34 | 93% | 1% | 13 |
3 | INTERSTITIAL HYDROGEN | 34 | 47% | 3% | 54 |
4 | SHALLOW ACCEPTOR IMPURITIES | 29 | 72% | 1% | 23 |
5 | CRYSTALLINE SEMICONDUCTORS | 24 | 45% | 2% | 40 |
6 | ACCEPTOR HYDROGEN | 22 | 81% | 1% | 13 |
7 | MICROSCOPIC STRUCTURE | 17 | 28% | 3% | 51 |
8 | REORIENTATION KINETICS | 13 | 67% | 1% | 12 |
9 | IR STRETCHING BANDS | 12 | 86% | 0% | 6 |
10 | DONOR NEUTRALIZATION | 11 | 56% | 1% | 14 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
HYDROGEN-RELATED DEFECTS IN CRYSTALLINE SEMICONDUCTORS - A THEORISTS PERSPECTIVE | 1995 | 191 | 304 | 56% |
Hydrogen in semiconductors | 2006 | 44 | 57 | 44% |
HYDROGEN IN CRYSTALLINE SEMICONDUCTORS | 1987 | 709 | 130 | 62% |
HYDROGEN INTERACTIONS WITH DEFECTS IN CRYSTALLINE SOLIDS | 1992 | 265 | 303 | 40% |
Dynamics of interstitial hydrogen molecules in crystalline silicon | 2001 | 28 | 51 | 76% |
HYDROGEN IN CRYSTALLINE SEMICONDUCTORS - A REVIEW OF EXPERIMENTAL RESULTS | 1991 | 79 | 55 | 93% |
Local vibrational modes of impurities in semiconductors | 2000 | 55 | 92 | 39% |
Vibrational spectroscopy of light element impurities in semiconductors | 1999 | 18 | 93 | 47% |
Hydrogen-impurity complexes in III-V semiconductors | 2004 | 8 | 131 | 53% |
HYDROGEN IN CRYSTALLINE SEMICONDUCTORS | 1988 | 111 | 88 | 74% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | EXCELLENCE MICROELECT PHOTON | 3 | 60% | 0.2% | 3 |
2 | ITTP | 3 | 60% | 0.2% | 3 |
3 | ELECT ENGN LGBE | 2 | 67% | 0.1% | 2 |
4 | PHYS SOLIDES BELLEVUE | 1 | 10% | 0.5% | 9 |
5 | GENIE PROCEDES PLASMAS TRAITEMENT SUR ES | 1 | 23% | 0.2% | 3 |
6 | DEV PERFORMANCE | 1 | 50% | 0.1% | 1 |
7 | ELE POWER SOURCES DIRECTORATE | 1 | 50% | 0.1% | 1 |
8 | FRANCE TELECOM SA | 1 | 50% | 0.1% | 1 |
9 | RADIAT UTILISAT GRP | 1 | 50% | 0.1% | 1 |
10 | SOLID STATE ELECT MAGNETOELECT | 1 | 50% | 0.1% | 1 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000150613 | ION CUT//SURFACE BLISTERING//SMART CUT |
2 | 0.0000140789 | SID4//DEUTERIUM D ANNEALING//TRAP CREATION |
3 | 0.0000107301 | CLUSTER OF DEFECTS//GROUP II ELEMENTS//SI CD |
4 | 0.0000104520 | MUONIUM//MUONIUM FORMATION//LOW ENERGY MUONS |
5 | 0.0000092338 | LIFETIME CONTROL//SEMI INSULATING MATERIALS//POWER DIODES |
6 | 0.0000084198 | CARBON DOPING//CBR4//C DOPED GAAS |
7 | 0.0000081393 | GETTERING//GETTERING EFFICIENCY//SI AU |
8 | 0.0000074784 | ATOMIC HYDROGEN CLEANING//ECR HYDROGEN PLASMA//IN SITU VACUUM PROCESS |
9 | 0.0000070946 | ELECT MAT DEVICES NANOSTRUCT//L DLTS//CNR IMM MATIS |
10 | 0.0000069025 | OXYGEN PRECIPITATION//GROWN IN DEFECT//CZOCHRALSKI SILICON |