Class information for: |
Basic class information |
| ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
|---|---|---|---|
| 3841 | 1824 | 20.8 | 50% |
Classes in level above (level 2) |
| ID, lev. above |
Publications | Label for level above |
|---|---|---|
| 372 | 16511 | SWAMP//OXYGEN PRECIPITATION//GROWN IN DEFECT |
Terms with highest relevance score |
| Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|---|
| 1 | GETTERING | Author keyword | 14 | 20% | 3% | 63 |
| 2 | GETTERING EFFICIENCY | Author keyword | 13 | 80% | 0% | 8 |
| 3 | SI AU | Author keyword | 11 | 100% | 0% | 6 |
| 4 | SUBSTITUTIONAL FE | Author keyword | 6 | 80% | 0% | 4 |
| 5 | INTERNAL GETTERING | Author keyword | 4 | 38% | 0% | 9 |
| 6 | IRON RELATED DEFECTS | Author keyword | 4 | 75% | 0% | 3 |
| 7 | FE DEFECTS | Author keyword | 3 | 100% | 0% | 3 |
| 8 | GOLD IN SILICON | Author keyword | 3 | 100% | 0% | 3 |
| 9 | MN AND FE IN SILICON | Author keyword | 3 | 100% | 0% | 3 |
| 10 | PHOTOLUMINESCENCE CU CENTER | Author keyword | 3 | 100% | 0% | 3 |
Web of Science journal categories |
Author Key Words |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
|---|---|---|---|---|---|---|---|
| 1 | GETTERING | 14 | 20% | 3% | 63 | Search GETTERING | Search GETTERING |
| 2 | GETTERING EFFICIENCY | 13 | 80% | 0% | 8 | Search GETTERING+EFFICIENCY | Search GETTERING+EFFICIENCY |
| 3 | SI AU | 11 | 100% | 0% | 6 | Search SI++AU | Search SI++AU |
| 4 | SUBSTITUTIONAL FE | 6 | 80% | 0% | 4 | Search SUBSTITUTIONAL+FE | Search SUBSTITUTIONAL+FE |
| 5 | INTERNAL GETTERING | 4 | 38% | 0% | 9 | Search INTERNAL+GETTERING | Search INTERNAL+GETTERING |
| 6 | IRON RELATED DEFECTS | 4 | 75% | 0% | 3 | Search IRON+RELATED+DEFECTS | Search IRON+RELATED+DEFECTS |
| 7 | FE DEFECTS | 3 | 100% | 0% | 3 | Search FE+DEFECTS | Search FE+DEFECTS |
| 8 | GOLD IN SILICON | 3 | 100% | 0% | 3 | Search GOLD+IN+SILICON | Search GOLD+IN+SILICON |
| 9 | MN AND FE IN SILICON | 3 | 100% | 0% | 3 | Search MN+AND+FE+IN+SILICON | Search MN+AND+FE+IN+SILICON |
| 10 | PHOTOLUMINESCENCE CU CENTER | 3 | 100% | 0% | 3 | Search PHOTOLUMINESCENCE+CU+CENTER | Search PHOTOLUMINESCENCE+CU+CENTER |
Key Words Plus |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | PLATINUM HYDROGEN COMPLEXES | 27 | 92% | 1% | 11 |
| 2 | INTERSTITIAL IRON | 26 | 56% | 2% | 31 |
| 3 | INTERSTITIAL COPPER | 24 | 67% | 1% | 22 |
| 4 | SUBSTITUTIONAL GOLD | 15 | 88% | 0% | 7 |
| 5 | INDIUM PAIR | 8 | 100% | 0% | 5 |
| 6 | LIFETIME TECHNIQUES | 7 | 67% | 0% | 6 |
| 7 | AGGREGATE DEFECTS | 6 | 80% | 0% | 4 |
| 8 | PLATINUM DIFFUSION | 6 | 53% | 0% | 8 |
| 9 | IN BEAM MOSSBAUER | 5 | 60% | 0% | 6 |
| 10 | TRANSIENT ION DRIFT | 5 | 41% | 0% | 9 |
Journals |
Reviews |
| Title | Publ. year | Cit. | Active references | % act. ref. to same field |
|---|---|---|---|---|
| Iron and its complexes in silicon | 1999 | 306 | 221 | 82% |
| Physics of copper in silicon | 2002 | 208 | 147 | 53% |
| Electrical properties and recombination activity of copper, nickel and cobalt in silicon | 1998 | 169 | 171 | 60% |
| Mechanisms of transition-metal gettering in silicon | 2000 | 149 | 104 | 54% |
| Iron contamination in silicon technology | 2000 | 163 | 410 | 40% |
| Interstitial Fe in Si and its interactions with hydrogen and shallow dopants | 2007 | 16 | 85 | 67% |
| Copper-related defects in silicon | 2004 | 13 | 104 | 72% |
| TRANSITION-METALS IN SILICON | 1983 | 821 | 27 | 96% |
| The interaction of hydrogen with deep level defects in silicon | 2000 | 29 | 204 | 29% |
| Vacancy distributions in silicon and methods for their accurate determination | 1998 | 7 | 50 | 44% |
Address terms |
| Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | EA 3246 | 1 | 50% | 0.1% | 2 |
| 2 | FLASH DESIGN | 1 | 50% | 0.1% | 2 |
| 3 | COMPUTAT NANOMAT DESIGN | 1 | 19% | 0.2% | 4 |
| 4 | CEACNRSURA 1380 | 1 | 50% | 0.1% | 1 |
| 5 | IPTM | 1 | 50% | 0.1% | 1 |
| 6 | LPSES | 1 | 50% | 0.1% | 1 |
| 7 | POWER IND GRP | 1 | 50% | 0.1% | 1 |
| 8 | SCI TECH MARSEILLE ST JEROME | 1 | 50% | 0.1% | 1 |
| 9 | SEH SDN BHD | 1 | 50% | 0.1% | 1 |
| 10 | SILICON TECHNOL RD | 1 | 50% | 0.1% | 1 |
Related classes at same level (level 1) |
| Rank | Relatedness score | Related classes |
|---|---|---|
| 1 | 0.0000162449 | CLUSTER OF DEFECTS//GROUP II ELEMENTS//SI CD |
| 2 | 0.0000154246 | METALLURGICAL GRADE SILICON//SOLAR GRADE SILICON//MULTICRYSTALLINE SILICON |
| 3 | 0.0000123619 | OXYGEN PRECIPITATION//GROWN IN DEFECT//CZOCHRALSKI SILICON |
| 4 | 0.0000121365 | OPTIMIZATION OF ANNEALING//ERBIUM RELATED CENTRES//SELF ASSEMBLED SILICON QUANTUM WELLS |
| 5 | 0.0000104698 | EMISSION RATE SPECTRUM//CAPACITANCE TRANSIENTS//DLTS RESOLUTION |
| 6 | 0.0000096719 | LIFETIME CONTROL//SEMI INSULATING MATERIALS//POWER DIODES |
| 7 | 0.0000094722 | AC SURFACE PHOTOVOLTAGE//SCANNING PHOTON MICROSCOPE//METAL AIR INSULATOR SEMICONDUCTOR |
| 8 | 0.0000092417 | ION CUT//SURFACE BLISTERING//SMART CUT |
| 9 | 0.0000087183 | ELECT MAT DEVICES NANOSTRUCT//L DLTS//CNR IMM MATIS |
| 10 | 0.0000086890 | GAP N//PICOSECOND TIMING RESOLUTION//SI H BOND DISSOCIATION |