Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
34219 | 76 | 14.7 | 55% |
Classes in level above (level 2) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
138 | 22619 | IEEE TRANSACTIONS ON ELECTRON DEVICES//IEEE ELECTRON DEVICE LETTERS//SOLID-STATE ELECTRONICS |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | BACK BIAS EFFECT | Author keyword | 2 | 67% | 3% | 2 |
2 | VERTICAL MOSFET | Author keyword | 2 | 19% | 12% | 9 |
3 | SURROUNDING GATE TRANSISTOR | Author keyword | 1 | 40% | 3% | 2 |
4 | 3 D DEVICE | Author keyword | 1 | 50% | 1% | 1 |
5 | 3D STRUCTURED DEVICE | Author keyword | 1 | 50% | 1% | 1 |
6 | BODY CHANNEL | Author keyword | 1 | 50% | 1% | 1 |
7 | FD SGT | Author keyword | 1 | 50% | 1% | 1 |
8 | MASUOKA | Address | 1 | 50% | 1% | 1 |
9 | NONADIABATIC BEHAVIOUR | Author keyword | 1 | 50% | 1% | 1 |
10 | PHOTON ASSISTED RESONANT TUNNELING | Author keyword | 1 | 50% | 1% | 1 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | BACK BIAS EFFECT | 2 | 67% | 3% | 2 | Search BACK+BIAS+EFFECT | Search BACK+BIAS+EFFECT |
2 | VERTICAL MOSFET | 2 | 19% | 12% | 9 | Search VERTICAL+MOSFET | Search VERTICAL+MOSFET |
3 | SURROUNDING GATE TRANSISTOR | 1 | 40% | 3% | 2 | Search SURROUNDING+GATE+TRANSISTOR | Search SURROUNDING+GATE+TRANSISTOR |
4 | 3 D DEVICE | 1 | 50% | 1% | 1 | Search 3+D+DEVICE | Search 3+D+DEVICE |
5 | 3D STRUCTURED DEVICE | 1 | 50% | 1% | 1 | Search 3D+STRUCTURED+DEVICE | Search 3D+STRUCTURED+DEVICE |
6 | BODY CHANNEL | 1 | 50% | 1% | 1 | Search BODY+CHANNEL | Search BODY+CHANNEL |
7 | FD SGT | 1 | 50% | 1% | 1 | Search FD+SGT | Search FD+SGT |
8 | NONADIABATIC BEHAVIOUR | 1 | 50% | 1% | 1 | Search NONADIABATIC+BEHAVIOUR | Search NONADIABATIC+BEHAVIOUR |
9 | PHOTON ASSISTED RESONANT TUNNELING | 1 | 50% | 1% | 1 | Search PHOTON+ASSISTED+RESONANT+TUNNELING | Search PHOTON+ASSISTED+RESONANT+TUNNELING |
10 | 65 NM PROCESS | 0 | 33% | 1% | 1 | Search 65+NM+PROCESS | Search 65+NM+PROCESS |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | GATE TRANSISTOR | 6 | 71% | 7% | 5 |
2 | SGT | 6 | 38% | 16% | 12 |
3 | SURROUNDING GATE TRANSISTOR | 6 | 100% | 5% | 4 |
4 | SYMPLECTIC INTEGRATION APPROACH | 1 | 100% | 3% | 2 |
5 | QUANTUM ELECTRON DYNAMICS | 0 | 33% | 1% | 1 |
6 | FD SGT | 0 | 25% | 1% | 1 |
7 | FERROELECTRIC DOMAIN FORMATION | 0 | 17% | 1% | 1 |
8 | TRANSISTOR FD SGT | 0 | 17% | 1% | 1 |
9 | DCVSL | 0 | 100% | 1% | 1 |
10 | SUSCEPTIBILITY DISPERSION | 0 | 100% | 1% | 1 |
Journals |
Reviews |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | MASUOKA | 1 | 50% | 1.3% | 1 |
2 | INNOVAT INTEGRATED ELECT SYST | 0 | 11% | 5.3% | 4 |
3 | ULSI DEVICE ENGN | 0 | 14% | 1.3% | 1 |
4 | ACCEL | 0 | 10% | 1.3% | 1 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000201256 | SPIN 1 ISING BEG MODEL//FIZ ANABILIM DALI//CP 6030 |
2 | 0.0000197554 | CAPACITORLESS DRAM//1T DRAM//CAPACITORLESS 1T DRAM |
3 | 0.0000175333 | CHARGE PUMP//SWITCHED CAPACITOR SC CONVERTER//SWITCHED CAPACITOR SC CONVERTERS |
4 | 0.0000150177 | DATA RETENTION TIME//VOLTAGE DOWN CONVERTER//FERROELECTRIC MEMORY |
5 | 0.0000122885 | FERROELECTRIC SUPERLATTICE//FERROELECTRIC SUPERLATTICES//FERROELECTRIC BILAYER FILM |
6 | 0.0000117716 | DOUBLE GATE MOSFET//FINFET//SHORT CHANNEL EFFECTS |
7 | 0.0000116390 | TIME DEFORMATION//SILENT SONAR//HYPERBOLIC FREQUENCY MODULATION |
8 | 0.0000102463 | SONOS//CHARGE TRAPPING LAYER//FLASH MEMORY |
9 | 0.0000098846 | POLYCONJUGATED POLYMERS//PROBLEMS NAT OURCES USE ECOL//CONCERTED PROCESSES |
10 | 0.0000097599 | CONDON DOMAINS//DIAMAGNETIC PHASE TRANSITION//DIAMAGNETIC PHASE TRANSITIONS |