Class information for:
Level 1: INGAN//EFFICIENCY DROOP//ELECTRON BLOCKING LAYER EBL

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
336 3554 21.3 82%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
33 32935 GAN//NITRIDES//GALLIUM NITRIDE

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 INGAN Author keyword 111 29% 9% 329
2 EFFICIENCY DROOP Author keyword 86 59% 3% 96
3 ELECTRON BLOCKING LAYER EBL Author keyword 29 88% 0% 14
4 OPTOELECT MAT TECHNOL Address 26 27% 2% 81
5 ALINGAN Author keyword 22 47% 1% 35
6 ELECTRON BLOCKING LAYER Author keyword 19 55% 1% 24
7 MAT E ORAT STRUCT STUDIES CEMES Address 14 100% 0% 7
8 DEV SEMICOND LIGHTING Address 12 56% 0% 15
9 INGAN GAN MULTIPLE QUANTUM WELLS Author keyword 12 63% 0% 12
10 DUAL WAVELENGTH LED Author keyword 12 86% 0% 6

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class		 LCSH search Wikipedia search
1 INGAN 111 29% 9% 329 Search INGAN Search INGAN
2 EFFICIENCY DROOP 86 59% 3% 96 Search EFFICIENCY+DROOP Search EFFICIENCY+DROOP
3 ELECTRON BLOCKING LAYER EBL 29 88% 0% 14 Search ELECTRON+BLOCKING+LAYER+EBL Search ELECTRON+BLOCKING+LAYER+EBL
4 ALINGAN 22 47% 1% 35 Search ALINGAN Search ALINGAN
5 ELECTRON BLOCKING LAYER 19 55% 1% 24 Search ELECTRON+BLOCKING+LAYER Search ELECTRON+BLOCKING+LAYER
6 INGAN GAN MULTIPLE QUANTUM WELLS 12 63% 0% 12 Search INGAN+GAN+MULTIPLE+QUANTUM+WELLS Search INGAN+GAN+MULTIPLE+QUANTUM+WELLS
7 DUAL WAVELENGTH LED 12 86% 0% 6 Search DUAL+WAVELENGTH+LED Search DUAL+WAVELENGTH+LED
8 GAINN 9 34% 1% 22 Search GAINN Search GAINN
9 INGAN QUANTUM WELLS QWS 9 83% 0% 5 Search INGAN+QUANTUM+WELLS+QWS Search INGAN+QUANTUM+WELLS+QWS
10 INGAN GAN 9 23% 1% 34 Search INGAN+GAN Search INGAN+GAN

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 EFFICIENCY DROOP 87 81% 1% 52
2 MULTIPLE QUANTUM WELLS 66 21% 8% 276
3 LOCALIZED EXCITONS 58 38% 3% 122
4 PIEZOELECTRIC FIELDS 56 44% 3% 98
5 EXCITON LOCALIZATION 49 52% 2% 66
6 GAINN 47 56% 2% 58
7 INGAN 43 28% 4% 128
8 DROOP 37 54% 1% 47
9 WURTZITE SEMICONDUCTORS 33 52% 1% 45
10 INGAN SINGLE 31 64% 1% 30

Journals


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH 7 12% 2% 59

Reviews


Title Publ. year Cit. Active references % act. ref.
to same field
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies 2013 45 84 92%
Efficiency droop in light-emitting diodes: Challenges and countermeasures 2013 46 84 81%
Band parameters for nitrogen-containing semiconductors 2003 1372 362 13%
InGaN light-emitting diodes: Efficiency-limiting processes at high injection 2013 12 58 88%
InGaN: An overview of the growth kinetics, physical properties and emission mechanisms 2008 79 147 56%
Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells 2009 63 81 46%
LEDs for Solid-State Lighting: Performance Challenges and Recent Advances 2009 253 52 13%
Pivotal role of ballistic and quasi-ballistic electrons on LED efficiency 2010 21 36 64%
III-nitrides for energy production: photovoltaic and thermoelectric applications 2013 6 52 52%
GaN Nanostructure-Based Light Emitting Diodes and Semiconductor Lasers 2014 3 314 26%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 OPTOELECT MAT TECHNOL 26 27% 2.3% 81
2 MAT E ORAT STRUCT STUDIES CEMES 14 100% 0.2% 7
3 DEV SEMICOND LIGHTING 12 56% 0.4% 15
4 NITRIDE SEMICOND 10 31% 0.8% 27
5 CHINA BRANCH 8 70% 0.2% 7
6 MICRONANO OPTOELECT 8 75% 0.2% 6
7 POWER ELECT 2 8 100% 0.1% 5
8 ENGN TECHNOL LED SI SUBSTRATE 7 57% 0.2% 8
9 LUMINOUS EXCELLENCE SEMICOND LIGHTING DISPL 7 24% 0.7% 24
10 RD SEMICOND LIGHTING 6 58% 0.2% 7

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000207113 SPMM//PHOTON MULTISCALE NANOMAT//BUILT IN FIELDS
2 0.0000198907 A PLANE GAN//LED TECHNOL//NONPOLAR
3 0.0000164123 GAASSB//PHOTON INFORMAT ENGN//NON MARKOVIAN GAIN MODEL
4 0.0000143364 SEMICONDUCTING ALUMINUM COMPOUNDS//CERAM OPERAT//ALGAN
5 0.0000130803 EPITAXIAL SEMICOND GRP//EXP SOLID STATE PHYS 3//RECIPROCAL SPACE ANALYSIS
6 0.0000129444 AL1 XINXN//ALINN//RESONANT CAVITY LIGHT EMITTING DIODE RCLED
7 0.0000127014 LIGHT EXTRACTION EFFICIENCY//LIGHT EMITTING DIODE LED//PATTERNED SAPPHIRE SUBSTRATE PSS
8 0.0000111991 GAN//HYDRIDE VAPOR PHASE EPITAXY//AMMONOTHERMAL CRYSTAL GROWTH
9 0.0000105608 INN//INDIUM NITRIDE//INN PROJECT
10 0.0000097023 JUNCTION TEMPERATURE//PHOSPHOR IN GLASS//ANGULAR COLOR UNIFORMITY