Class information for:
Level 1: SID4//DEUTERIUM D ANNEALING//TRAP CREATION

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
32316 110 16.5 72%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
138 22619 IEEE TRANSACTIONS ON ELECTRON DEVICES//IEEE ELECTRON DEVICE LETTERS//SOLID-STATE ELECTRONICS

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ.
in class
1 SID4 Author keyword 2 67% 2% 2
2 DEUTERIUM D ANNEALING Author keyword 1 100% 2% 2
3 TRAP CREATION Author keyword 1 40% 2% 2
4 DEUTERIURN Author keyword 1 50% 1% 1
5 FOWLER NORDHEIM ELECTRON INJECTION Author keyword 1 50% 1% 1
6 IMAGING SOLUT GRP Address 1 50% 1% 1
7 POINT DEFECTS IN SEMICONDUCTORS Author keyword 1 50% 1% 1
8 DEUTERIUM ANNEALING Author keyword 0 33% 1% 1
9 DEUTERIUM PASSIVATION Author keyword 0 33% 1% 1
10 STM SPECTROSCOPY Author keyword 0 33% 1% 1

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ.
in class		 LCSH search Wikipedia search
1 SID4 2 67% 2% 2 Search SID4 Search SID4
2 DEUTERIUM D ANNEALING 1 100% 2% 2 Search DEUTERIUM+D+ANNEALING Search DEUTERIUM+D+ANNEALING
3 TRAP CREATION 1 40% 2% 2 Search TRAP+CREATION Search TRAP+CREATION
4 DEUTERIURN 1 50% 1% 1 Search DEUTERIURN Search DEUTERIURN
5 FOWLER NORDHEIM ELECTRON INJECTION 1 50% 1% 1 Search FOWLER+NORDHEIM+ELECTRON+INJECTION Search FOWLER+NORDHEIM+ELECTRON+INJECTION
6 POINT DEFECTS IN SEMICONDUCTORS 1 50% 1% 1 Search POINT+DEFECTS+IN+SEMICONDUCTORS Search POINT+DEFECTS+IN+SEMICONDUCTORS
7 DEUTERIUM ANNEALING 0 33% 1% 1 Search DEUTERIUM+ANNEALING Search DEUTERIUM+ANNEALING
8 DEUTERIUM PASSIVATION 0 33% 1% 1 Search DEUTERIUM+PASSIVATION Search DEUTERIUM+PASSIVATION
9 STM SPECTROSCOPY 0 33% 1% 1 Search STM+SPECTROSCOPY Search STM+SPECTROSCOPY
10 ELECTRICAL STRESSES 0 25% 1% 1 Search ELECTRICAL+STRESSES Search ELECTRICAL+STRESSES

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 HOT ELECTRON DEGRADATION 26 48% 35% 39
2 ELECTRON DEGRADATION 14 65% 12% 13
3 CARRIER RELIABILITY 12 86% 5% 6
4 OXIDE SEMICONDUCTOR TRANSISTORS 9 20% 36% 40
5 SEMICONDUCTOR TRANSISTORS 4 38% 8% 9
6 DEUTERIUM TRANSPORT 1 33% 3% 3
7 OXIDE SILICON INTERFACES 1 50% 1% 1
8 HOT CARRIER RELIABILITY 0 14% 3% 3
9 DEUTERATED AMORPHOUS SILICON 0 33% 1% 1
10 ANNEALS 0 18% 2% 2

Journals

Reviews

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ.
in class
1 IMAGING SOLUT GRP 1 50% 0.9% 1
2 MICROMAGNET ELECT DEVICES 0 18% 1.8% 2
3 CPU 0 13% 1.8% 2
4 DEVICE SOLUT NETWORK BUSINESS 0 17% 0.9% 1
5 TATA 0 17% 0.9% 1
6 CPU TECH TEAM 0 100% 0.9% 1
7 NANOSCALE SCIENEC ENGN 0 100% 0.9% 1
8 TECHNOL DEV PROJECT TEAM 0 100% 0.9% 1

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000234273 MOS TUNNELING DIODE//ELECTRON HOLE PLASMA RECOMBINATION//LATERAL NONUNIFORMITY LNU
2 0.0000223588 NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI//NEGATIVE BIAS TEMPERATURE INSTABILITY//CHRISTIAN DOPPLER TCAD
3 0.0000191145 HOT CARRIER//CHANNEL INITIATED SECONDARY ELECTRON CHISEL//HOT CARRIER DEGRADATION
4 0.0000179018 FELIX FREE ELE ON LASER IL//FELIX FREE ELECT LASER IL//CROX33
5 0.0000165762 STRESS INDUCED LEAKAGE CURRENT//SOFT BREAKDOWN//DIELECTRIC BREAKDOWN BD
6 0.0000145141 HYDROGEN SURFACTANT//AUSTRALIAN COUNCIL EXCELLENCE QUANTUM COM//EXCELLENCE QUANTUM COMPUTAT COMMUN TECHNOL
7 0.0000140789 HYDROGEN IN SILICON//MULTIVACANCY//HYDROGEN IN SI
8 0.0000139345 OXIDE TRAPPED CHARGE//ELDRS//TOTAL IONIZING DOSE
9 0.0000137505 BULK AND INTERFACE STATES//NANO TRANSISTOR//VACANCY FORMATION ENERGY
10 0.0000136678 HYDROGEN TERMINATION//SHIZUOKA TORY//LAYER BY LAYER OXIDATION