Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
31615 | 120 | 15.3 | 55% |
Classes in level above (level 2) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
1700 | 6150 | HETEROJUNCTION BIPOLAR TRANSISTORS//HETEROJUNCTION BIPOLAR TRANSISTORS HBTS//HETEROJUNCTION BIPOLAR TRANSISTOR HBT |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | ULTRAVIOLET LIGHT DETECTORS | Author keyword | 2 | 67% | 2% | 2 |
2 | ORIENTATION OF MOLECULES | Author keyword | 2 | 43% | 3% | 3 |
3 | BORON CHEMICAL VAPOR DEPOSITION | Author keyword | 1 | 100% | 2% | 2 |
4 | DIBORANE B2H6 | Author keyword | 1 | 100% | 2% | 2 |
5 | HIGH OHMIC RESISTORS | Author keyword | 1 | 100% | 2% | 2 |
6 | LONG RANGE ORDER INTERACTION | Author keyword | 1 | 100% | 2% | 2 |
7 | PHOSPHINE ADSORPTION | Author keyword | 1 | 100% | 2% | 2 |
8 | SI PHOTODIODES | Author keyword | 1 | 50% | 2% | 2 |
9 | ULTRASHALLOW JUNCTIONS | Author keyword | 1 | 24% | 4% | 5 |
10 | BORON DEPOSITION | Author keyword | 1 | 40% | 2% | 2 |
Web of Science journal categories |
Author Key Words |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | HOLE GENERATION | 9 | 64% | 8% | 9 |
2 | ULTRASHALLOW | 6 | 58% | 6% | 7 |
3 | B 12 CLUSTERS | 3 | 100% | 3% | 3 |
4 | DOPING TECHNOLOGY | 1 | 100% | 2% | 2 |
5 | EMITTER CONTACT | 1 | 50% | 1% | 1 |
6 | ICOSAHEDRAL CLUSTERS | 0 | 13% | 2% | 2 |
7 | ULTRA SHALLOW JUNCTION | 0 | 20% | 1% | 1 |
8 | ICOSAHEDRON | 0 | 11% | 2% | 2 |
9 | NM SPECTRAL RANGE | 0 | 14% | 1% | 1 |
10 | HOLE PAIR | 0 | 11% | 1% | 1 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references |
% act. ref. to same field |
---|---|---|---|---|
Atomic and electronic structures of boron clusters in crystalline silicon: The case of X@B-6 and X@B-12, X=H-Br | 2008 | 0 | 12 | 42% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | H ABDULLAYEV PHYS | 1 | 50% | 0.8% | 1 |
2 | ELECT ENGN EWI | 0 | 33% | 0.8% | 1 |
3 | ECTM DIMES | 0 | 11% | 1.7% | 2 |
4 | ADV LSI TECHNOL S | 0 | 20% | 0.8% | 1 |
5 | MIXED SIGNAL | 0 | 14% | 0.8% | 1 |
6 | ATSUGI TECHNOL | 0 | 13% | 0.8% | 1 |
7 | F ALLGEMEINE PHYS | 0 | 100% | 0.8% | 1 |
8 | SILICON DEVICE INTEGRAT GRP | 0 | 100% | 0.8% | 1 |
9 | ZEMRIS | 0 | 100% | 0.8% | 1 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000198171 | TRANSIENT ENHANCED DIFFUSION//SWAMP//PAIR DIFFUSION MODEL |
2 | 0.0000178354 | PASSIVATED CONTACT//POLYSILICON EMITTER//CLOCK ACCESS TIME |
3 | 0.0000170490 | CROSS BRIDGE KELVIN RESISTOR CBKR//CROSS KELVIN RESISTOR CKR//CROSS BRIDGE KELVIN RESISTOR |
4 | 0.0000126683 | ATOMIC LAYER DOPING//SI EPITAXIAL GROWTH//GERMANIUM SILICON COMPOUNDS |
5 | 0.0000121939 | GAAS IMAGE SENSOR//DUAL GATE MOSFET//2 D ELECTRON GAS CHARGE COUPLED DEVICES 2DEG CCDS |
6 | 0.0000090191 | METROLOGIA//CRYOGENIC RADIOMETER//TRAP DETECTOR |
7 | 0.0000076234 | SURFACE SELECTIVITY//DEFECT COMPENSATION//THERMOCHEMICAL REACTION |
8 | 0.0000072019 | SILICON DRIFT DETECTORS//DEPFET//SILICON DRIFT DETECTOR |
9 | 0.0000066420 | BEAM CHANNEL TRANSISTOR//IMPURITY ENHANCED OXIDATION//BIPOLAR MODE FIELD EFFECT TRANSISTORS BMFETS |
10 | 0.0000063212 | RAPID THERMAL PROCESSING RTP//RAPID THERMAL PROCESSING//CTOD FRACTURE TOUGHNESS TESTING |