Class information for: |
Basic class information |
| ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
|---|---|---|---|
| 2924 | 2036 | 22.0 | 77% |
Classes in level above (level 2) |
Terms with highest relevance score |
| Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|---|
| 1 | OBNINSK BRANCH FED STATE UNITARY ENTERPRISE | Address | 37 | 100% | 1% | 14 |
| 2 | YELLOW LUMINESCENCE | Author keyword | 20 | 56% | 1% | 24 |
| 3 | MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH | Journal | 12 | 15% | 4% | 74 |
| 4 | P TYPE ACTIVATION | Author keyword | 6 | 71% | 0% | 5 |
| 5 | MG ACCEPTOR | Author keyword | 5 | 63% | 0% | 5 |
| 6 | GAN MG | Author keyword | 5 | 50% | 0% | 7 |
| 7 | UNIP S | Address | 4 | 20% | 1% | 18 |
| 8 | CHICHIBU | Address | 3 | 50% | 0% | 5 |
| 9 | MICROSTRUCT ANAL UNIT | Address | 3 | 14% | 1% | 19 |
| 10 | P GAN | Author keyword | 3 | 15% | 1% | 16 |
Web of Science journal categories |
Author Key Words |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
|---|---|---|---|---|---|---|---|
| 1 | YELLOW LUMINESCENCE | 20 | 56% | 1% | 24 | Search YELLOW+LUMINESCENCE | Search YELLOW+LUMINESCENCE |
| 2 | P TYPE ACTIVATION | 6 | 71% | 0% | 5 | Search P+TYPE+ACTIVATION | Search P+TYPE+ACTIVATION |
| 3 | MG ACCEPTOR | 5 | 63% | 0% | 5 | Search MG+ACCEPTOR | Search MG+ACCEPTOR |
| 4 | GAN MG | 5 | 50% | 0% | 7 | Search GAN++MG | Search GAN++MG |
| 5 | P GAN | 3 | 15% | 1% | 16 | Search P+GAN | Search P+GAN |
| 6 | MG DOPING | 3 | 15% | 1% | 16 | Search MG+DOPING | Search MG+DOPING |
| 7 | P TYPE GAN | 2 | 24% | 0% | 9 | Search P+TYPE+GAN | Search P+TYPE+GAN |
| 8 | GA VACANCY | 2 | 38% | 0% | 5 | Search GA+VACANCY | Search GA+VACANCY |
| 9 | MG DOPED GAN | 2 | 29% | 0% | 7 | Search MG+DOPED+GAN | Search MG+DOPED+GAN |
| 10 | CATHODOLUMINESCENCE CL SPECTROSCOPY | 2 | 67% | 0% | 2 | Search CATHODOLUMINESCENCE+CL+SPECTROSCOPY | Search CATHODOLUMINESCENCE+CL+SPECTROSCOPY |
Key Words Plus |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | YELLOW LUMINESCENCE | 78 | 38% | 8% | 164 |
| 2 | MG DOPED GAN | 58 | 38% | 6% | 120 |
| 3 | DOPED GAN | 45 | 26% | 7% | 146 |
| 4 | UNDOPED GAN | 45 | 56% | 3% | 55 |
| 5 | P TYPE GAN | 36 | 23% | 7% | 134 |
| 6 | NATIVE DEFECTS | 28 | 25% | 5% | 97 |
| 7 | N TYPE GAN | 24 | 17% | 6% | 129 |
| 8 | PHOTOLUMINESCENCE BANDS | 24 | 68% | 1% | 21 |
| 9 | LOCAL VIBRATIONAL MODES | 15 | 35% | 2% | 35 |
| 10 | GALLIUM VACANCIES | 15 | 41% | 1% | 28 |
Journals |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH | 12 | 15% | 4% | 74 |
Reviews |
| Title | Publ. year | Cit. | Active references | % act. ref. to same field |
|---|---|---|---|---|
| First-principles calculations for defects and impurities: Applications to III-nitrides | 2004 | 1012 | 153 | 51% |
| Luminescence properties of defects in GaN | 2005 | 662 | 471 | 46% |
| Review of radiation damage in GaN-based materials and devices | 2013 | 18 | 135 | 81% |
| Ion implantation into GaN | 2001 | 182 | 101 | 63% |
| GaN: Processing, defects, and devices | 1999 | 1033 | 405 | 11% |
| Ion implantation into gallium nitride | 2001 | 77 | 140 | 65% |
| The doping process and dopant characteristics of GaN | 2002 | 52 | 156 | 51% |
| Role of Hydrogen in the CVD of Wide Bandgap Nitride Semiconductors | 2010 | 2 | 39 | 82% |
| Minority carrier transport in GaN and related materials | 2001 | 45 | 41 | 32% |
| First-principles theory of acceptors in nitride semiconductors | 2015 | 0 | 76 | 53% |
Address terms |
| Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | OBNINSK BRANCH FED STATE UNITARY ENTERPRISE | 37 | 100% | 0.7% | 14 |
| 2 | UNIP S | 4 | 20% | 0.9% | 18 |
| 3 | CHICHIBU | 3 | 50% | 0.2% | 5 |
| 4 | MICROSTRUCT ANAL UNIT | 3 | 14% | 0.9% | 19 |
| 5 | OBNINSK BRANCH | 1 | 12% | 0.5% | 11 |
| 6 | NITRIDE PHOTON SEMICOND | 1 | 50% | 0.1% | 2 |
| 7 | PHYS CRYSTAL GROWTH | 1 | 100% | 0.1% | 2 |
| 8 | SUR E MODIFICAT LEIPZIG | 1 | 100% | 0.1% | 2 |
| 9 | HIGH P SURE UNIP S | 1 | 19% | 0.3% | 6 |
| 10 | WIDE BAND G SEMICOND TECHNOL | 1 | 25% | 0.2% | 4 |
Related classes at same level (level 1) |
| Rank | Relatedness score | Related classes |
|---|---|---|
| 1 | 0.0000249795 | EPITAXIAL SEMICOND GRP//EXP SOLID STATE PHYS 3//RECIPROCAL SPACE ANALYSIS |
| 2 | 0.0000199503 | GAN//HYDRIDE VAPOR PHASE EPITAXY//AMMONOTHERMAL CRYSTAL GROWTH |
| 3 | 0.0000187125 | P INGAN//GAN SIC HETEROJUNCTION//COMMON EMITTER |
| 4 | 0.0000163934 | SOCIOTECHNO SCI TECHNOL//N GAN//GALLIUM HYDROXIDE |
| 5 | 0.0000148209 | P GAN//OHMIC CONTACT//OHMIC CONTACTS |
| 6 | 0.0000128502 | GAN SURFACES//INTERDISCIPLINARY MODELLING//INTERDISCIPLINARY MAT MODELLING |
| 7 | 0.0000118419 | SEMICONDUCTING ALUMINUM COMPOUNDS//CERAM OPERAT//ALGAN |
| 8 | 0.0000106813 | CUBIC GAN//FB PHYS 6//HEXAGONAL GAN |
| 9 | 0.0000096924 | METAL SEMICONDUCTOR METAL MSM//ULTRAVIOLET UV DETECTOR//PHOTODETECTORS PDS |
| 10 | 0.0000096438 | ALGAN GAN//HIGH ELECTRON MOBILITY TRANSISTOR HEMT//CURRENT COLLAPSE |