Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
2794 | 2072 | 18.2 | 84% |
Classes in level above (level 2) |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | LIGHT EXTRACTION EFFICIENCY | Author keyword | 52 | 49% | 4% | 76 |
2 | LIGHT EMITTING DIODE LED | Author keyword | 39 | 23% | 7% | 147 |
3 | PATTERNED SAPPHIRE SUBSTRATE PSS | Author keyword | 37 | 81% | 1% | 22 |
4 | LIGHT EMITTING DIODES LEDS | Author keyword | 35 | 24% | 6% | 125 |
5 | PATTERNED SAPPHIRE SUBSTRATE | Author keyword | 35 | 61% | 2% | 37 |
6 | LIGHT EXTRACTION | Author keyword | 28 | 35% | 3% | 67 |
7 | GAN BASED LIGHT EMITTING DIODES LEDS | Author keyword | 27 | 83% | 1% | 15 |
8 | CURRENT SPREADING | Author keyword | 22 | 49% | 2% | 33 |
9 | LIGHT EXTRACTION EFFICIENCY LEE | Author keyword | 17 | 72% | 1% | 13 |
10 | ALGAINP | Author keyword | 15 | 26% | 3% | 52 |
Web of Science journal categories |
Author Key Words |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | EXTRACTION EFFICIENCY | 86 | 41% | 8% | 162 |
2 | GAN BASED LEDS | 65 | 76% | 2% | 45 |
3 | NITRIDE BASED LEDS | 60 | 64% | 3% | 59 |
4 | LASER LIFT OFF | 54 | 58% | 3% | 62 |
5 | LEDS | 53 | 17% | 14% | 285 |
6 | HIGH EXTRACTION EFFICIENCY | 40 | 58% | 2% | 46 |
7 | EXTERNAL QUANTUM EFFICIENCY | 31 | 27% | 5% | 99 |
8 | PATTERNED SAPPHIRE | 30 | 57% | 2% | 35 |
9 | MQW LEDS | 26 | 80% | 1% | 16 |
10 | EXTRACTION ENHANCEMENT | 21 | 73% | 1% | 16 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
Enhancement of Light Output Power from LEDs Based on Monolayer Colloidal Crystal | 2014 | 9 | 177 | 42% |
Photonic crystal LEDs - designing light extraction | 2009 | 98 | 61 | 52% |
Enhancement of light extraction from light emitting diodes | 2011 | 88 | 575 | 28% |
Photonic crystal light-emitting sources | 2012 | 16 | 100 | 33% |
Light Extraction Efficiency Part A. Ray Tracing for Light Extraction Efficiency (LEE) Modeling in Nitride LEDs | 2013 | 1 | 31 | 71% |
High-efficiency AlGaInP light-emitting diodes for solid-state lighting applications | 2004 | 89 | 34 | 47% |
Active Region Part A. Internal Quantum Efficiency in LEDs | 2013 | 1 | 21 | 52% |
Light Extraction Efficiency Part B. Light Extraction of High Efficient LEDs | 2013 | 0 | 69 | 72% |
Progress in Preparation of Patterned Sapphire Substrate for GaN-based Light Emitting Diodes | 2012 | 0 | 49 | 71% |
Progress and prospects of GaN-based LEDs using nanostructures | 2015 | 0 | 102 | 42% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | CF TECHNOL | 14 | 100% | 0.3% | 7 |
2 | SEMICOND LIGHTING TECHNOL DEV | 12 | 36% | 1.3% | 27 |
3 | IPCMS DON UNITE MIXTE | 8 | 100% | 0.2% | 5 |
4 | LED BUSINESS | 8 | 37% | 0.8% | 17 |
5 | BEIJING OPTOELECT TECHNOL | 6 | 33% | 0.8% | 16 |
6 | MICROELECTADV OPTOELECT TECHNOL | 4 | 75% | 0.1% | 3 |
7 | SEMICOND SCI CHEM TECHNOL | 4 | 75% | 0.1% | 3 |
8 | LED DEVICE | 4 | 44% | 0.3% | 7 |
9 | ELECT OPTOELECT S | 4 | 10% | 1.8% | 37 |
10 | CHIP DEV GRP | 4 | 38% | 0.4% | 8 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000219271 | JUNCTION TEMPERATURE//PHOSPHOR IN GLASS//ANGULAR COLOR UNIFORMITY |
2 | 0.0000178226 | P GAN//OHMIC CONTACT//OHMIC CONTACTS |
3 | 0.0000173752 | SOCIOTECHNO SCI TECHNOL//N GAN//GALLIUM HYDROXIDE |
4 | 0.0000148734 | AL1 XINXN//ALINN//RESONANT CAVITY LIGHT EMITTING DIODE RCLED |
5 | 0.0000127014 | INGAN//EFFICIENCY DROOP//ELECTRON BLOCKING LAYER EBL |
6 | 0.0000106496 | AG PLASMONS//ENHANCED NEAR BAND EDGE EMISSION//ZNO EXCITONS |
7 | 0.0000080881 | GAN//HYDRIDE VAPOR PHASE EPITAXY//AMMONOTHERMAL CRYSTAL GROWTH |
8 | 0.0000068311 | SEMICONDUCTING ALUMINUM COMPOUNDS//CERAM OPERAT//ALGAN |
9 | 0.0000066081 | SI111 SUBSTRATES//SI111 SUBSTRATE//ALN BUFFER |
10 | 0.0000058268 | A PLANE GAN//LED TECHNOL//NONPOLAR |