Class information for:
Level 1: STRESS INDUCED LEAKAGE CURRENT//SOFT BREAKDOWN//DIELECTRIC BREAKDOWN BD

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
2748 2082 19.5 55%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
138 22619 IEEE TRANSACTIONS ON ELECTRON DEVICES//IEEE ELECTRON DEVICE LETTERS//SOLID-STATE ELECTRONICS

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 STRESS INDUCED LEAKAGE CURRENT Author keyword 32 58% 2% 37
2 SOFT BREAKDOWN Author keyword 25 52% 2% 34
3 DIELECTRIC BREAKDOWN BD Author keyword 24 91% 0% 10
4 OXIDE RELIABILITY Author keyword 24 45% 2% 40
5 OXIDE BREAKDOWN Author keyword 18 39% 2% 37
6 DIELECTRIC BREAKDOWN Author keyword 15 15% 5% 94
7 HARD BREAKDOWN Author keyword 14 57% 1% 16
8 MOS DEVICES Author keyword 13 18% 3% 67
9 ZI ROUSSET Address 11 56% 1% 14
10 TIME DEPENDENT DIELECTRIC BREAKDOWN TDDB Author keyword 10 29% 1% 28

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class		 LCSH search Wikipedia search
1 STRESS INDUCED LEAKAGE CURRENT 32 58% 2% 37 Search STRESS+INDUCED+LEAKAGE+CURRENT Search STRESS+INDUCED+LEAKAGE+CURRENT
2 SOFT BREAKDOWN 25 52% 2% 34 Search SOFT+BREAKDOWN Search SOFT+BREAKDOWN
3 DIELECTRIC BREAKDOWN BD 24 91% 0% 10 Search DIELECTRIC+BREAKDOWN+BD Search DIELECTRIC+BREAKDOWN+BD
4 OXIDE RELIABILITY 24 45% 2% 40 Search OXIDE+RELIABILITY Search OXIDE+RELIABILITY
5 OXIDE BREAKDOWN 18 39% 2% 37 Search OXIDE+BREAKDOWN Search OXIDE+BREAKDOWN
6 DIELECTRIC BREAKDOWN 15 15% 5% 94 Search DIELECTRIC+BREAKDOWN Search DIELECTRIC+BREAKDOWN
7 HARD BREAKDOWN 14 57% 1% 16 Search HARD+BREAKDOWN Search HARD+BREAKDOWN
8 MOS DEVICES 13 18% 3% 67 Search MOS+DEVICES Search MOS+DEVICES
9 TIME DEPENDENT DIELECTRIC BREAKDOWN TDDB 10 29% 1% 28 Search TIME+DEPENDENT+DIELECTRIC+BREAKDOWN+TDDB Search TIME+DEPENDENT+DIELECTRIC+BREAKDOWN+TDDB
10 SILC 7 25% 1% 23 Search SILC Search SILC

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 SILICON DIOXIDE FILMS 62 31% 8% 169
2 TRAP GENERATION 55 44% 5% 95
3 SOFT BREAKDOWN 51 48% 4% 78
4 INDUCED LEAKAGE CURRENT 51 39% 5% 104
5 SIO2 INDUCED SUBSTRATE CURRENT 37 100% 1% 14
6 OXIDE BREAKDOWN 33 41% 3% 63
7 HARD BREAKDOWN 28 64% 1% 27
8 THIN SIO2 FILMS 27 51% 2% 37
9 TRAP CREATION 26 45% 2% 43
10 POSITIVE CHARGE 25 29% 3% 71

Journals

Reviews


Title Publ. year Cit. Active references % act. ref.
to same field
Dielectric breakdown mechanisms in gate oxides 2005 136 99 81%
Ultra-thin dielectric breakdown in devices and circuits: A brief review 2015 1 30 87%
Electron transport through broken down ultra-thin SiO2 layers in MOS devices 2004 58 124 86%
Power-law voltage acceleration: A key element for ultra-thin gate oxide reliability 2005 63 50 82%
Reliability limits for the gate insulator in CMOS technology 2002 102 112 80%
Ultrathin gate oxide reliability: Physical models, statistics, and characterization 2002 70 57 82%
Modeling of tunneling current and gate dielectric reliability for nonvolatile memory devices 2004 32 75 40%
Dielectric reliability measurement methods: A review 1998 54 84 74%
RELIABILITY OF THIN SIO2 1994 70 39 64%
Thin dielectric reliability assessment for DRAM technology with deep trench storage node 2003 6 37 81%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 ZI ROUSSET 11 56% 0.7% 14
2 LEAA 6 100% 0.2% 4
3 AUTOMAT MICROELECT 5 35% 0.6% 12
4 ETUD MICROELECT MAT 4 75% 0.1% 3
5 L2MP POLYTECH 4 75% 0.1% 3
6 SEMICOND DEVICE RELIABIL 4 75% 0.1% 3
7 ENG ELECT 4 46% 0.3% 6
8 PHYS COMPOSANTS SEMICOND 3 19% 0.6% 13
9 ST MICROELECT 2 32% 0.3% 6
10 CORP RELIABIL METHODOL 2 67% 0.1% 2

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000197716 DIRECT TUNNELING//QUANTUM MECHANICAL EFFECTS QMES//WAVE FUNCTION PENETRATION
2 0.0000165762 SID4//DEUTERIUM D ANNEALING//TRAP CREATION
3 0.0000148990 BORON PENETRATION//REMOTE PLASMA NITRIDATION RPN//SI NITRIDE
4 0.0000145524 NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI//NEGATIVE BIAS TEMPERATURE INSTABILITY//CHRISTIAN DOPPLER TCAD
5 0.0000129188 POLYOXIDE//INTERPOLY OXIDE//NONPLANAR POLYOXIDE
6 0.0000124410 OXIDE TRAPPED CHARGE//ELDRS//TOTAL IONIZING DOSE
7 0.0000121180 SINGLE EVENT BURNOUT SEB//SINGLE EVENT GATE RUPTURE SEGR//RREACT GRP
8 0.0000119673 HOT CARRIER//CHANNEL INITIATED SECONDARY ELECTRON CHISEL//HOT CARRIER DEGRADATION
9 0.0000108447 ATOMIC LAYER ETCHING//GATE CHARGING//NEUTRAL BEAM ETCHING
10 0.0000095101 MOS TUNNELING DIODE//ELECTRON HOLE PLASMA RECOMBINATION//LATERAL NONUNIFORMITY LNU