Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
26500 | 208 | 16.4 | 55% |
Classes in level above (level 2) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
993 | 9970 | THIN FILM TRANSISTOR//THIN FILM TRANSISTORS TFTS//THIN FILM TRANSISTOR TFT |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | POLY SIGE | Author keyword | 5 | 25% | 9% | 18 |
2 | POLY SI1 XGEX | Author keyword | 3 | 57% | 2% | 4 |
3 | POLYCRYSTALLINE SILICON GERMANIUM | Author keyword | 1 | 38% | 1% | 3 |
4 | MEMS POSTPROCESSING | Author keyword | 1 | 100% | 1% | 2 |
5 | PROC MODULE DEV | Address | 1 | 50% | 1% | 2 |
6 | SILICON GERMANIUM FILMS | Author keyword | 1 | 50% | 1% | 2 |
7 | VALENCE BAND TUNNELING | Author keyword | 1 | 50% | 1% | 2 |
8 | ADV MAT PROCLAMP | Address | 1 | 50% | 0% | 1 |
9 | AMORPHOUS SI TI | Author keyword | 1 | 50% | 0% | 1 |
10 | CAPACITIVE DEVICES | Author keyword | 1 | 50% | 0% | 1 |
Web of Science journal categories |
Author Key Words |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | SILICON GERMANIUM FILMS | 22 | 67% | 10% | 20 |
2 | OXIDE SEMICONDUCTOR APPLICATIONS | 6 | 100% | 2% | 4 |
3 | POLY SIGE | 3 | 43% | 3% | 6 |
4 | SI1 XGEX FILMS | 3 | 22% | 6% | 13 |
5 | POLYCRYSTALLINE SI1 XGEX | 3 | 60% | 1% | 3 |
6 | POLYCRYSTALLINE SIXGE1 X FILMS | 1 | 38% | 1% | 3 |
7 | 210 DEGREES C | 1 | 100% | 1% | 2 |
8 | GATE MATERIAL | 1 | 100% | 1% | 2 |
9 | POLYCRYSTALLINE SI1 XGEX FILMS | 1 | 50% | 1% | 2 |
10 | POLYCRYSTALLINE SILICON GERMANIUM | 1 | 25% | 2% | 4 |
Journals |
Reviews |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | PROC MODULE DEV | 1 | 50% | 1.0% | 2 |
2 | ADV MAT PROCLAMP | 1 | 50% | 0.5% | 1 |
3 | DEVICE CHARACTERIZAT | 1 | 50% | 0.5% | 1 |
4 | OPEN HIGH TEMP MAT TESTING | 0 | 25% | 0.5% | 1 |
5 | SEMICOND COMPONENTS CCS | 0 | 25% | 0.5% | 1 |
6 | MICROTECHNOL CHALMERS MC2 | 0 | 12% | 1.0% | 2 |
7 | ELECT SOLID STATE ELECT | 0 | 14% | 0.5% | 1 |
8 | YJ SCI TECHNOL | 0 | 11% | 0.5% | 1 |
9 | YOUSSEF JAMEEL SCI TECHNOL | 0 | 11% | 0.5% | 1 |
10 | ELECT DEVICES CO | 0 | 10% | 0.5% | 1 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000242613 | METAL INDUCED CRYSTALLIZATION//SOLID PHASE CRYSTALLIZATION//METAL INDUCED LATERAL CRYSTALLIZATION |
2 | 0.0000202661 | ATOMIC LAYER DOPING//SI EPITAXIAL GROWTH//GERMANIUM SILICON COMPOUNDS |
3 | 0.0000128611 | POLYSILICON RESISTORS//HEAVILY DOPED POLYSILICON RESISTOR//LPCVD SI LAYERS |
4 | 0.0000124691 | POLY SI TFT//POLYCRYSTALLINE SILICON THIN FILM TRANSISTORS POLY SI TFTS//JOINT SCI TECHNOL |
5 | 0.0000113825 | STRAINED SI//SIGE//STRAINED SILICON |
6 | 0.0000108913 | UNCOOLED INFRARED IMAGING//OPTICAL READOUT//MICROBOLOMETER |
7 | 0.0000105447 | ANTIFUSE//SOURCE GATED TRANSISTOR SGT//MULTITIME PROGRAMMABLE MTP |
8 | 0.0000080087 | GERMANIUM CARBON//A SIGE//GE1 XCX |
9 | 0.0000075896 | BORON PENETRATION//REMOTE PLASMA NITRIDATION RPN//SI NITRIDE |
10 | 0.0000072153 | DIRECT TUNNELING//QUANTUM MECHANICAL EFFECTS QMES//WAVE FUNCTION PENETRATION |