Class information for: |
Basic class information |
| ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
|---|---|---|---|
| 26412 | 210 | 26.5 | 43% |
Classes in level above (level 2) |
| ID, lev. above |
Publications | Label for level above |
|---|---|---|
| 3558 | 953 | NOVOSHAKHTINSK BRANCH//ELE OCHEM HYDROGEN ENERGY//AMORPHOUS III V SEMICONDUCTORS |
Terms with highest relevance score |
| Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|---|
| 1 | NOVOSHAKHTINSK BRANCH | Address | 4 | 67% | 2% | 4 |
| 2 | ELE OCHEM HYDROGEN ENERGY | Address | 3 | 50% | 2% | 5 |
| 3 | IRON STEEL IND | Address | 2 | 67% | 1% | 2 |
| 4 | HYDROGEN ACCUMULATION | Author keyword | 1 | 33% | 1% | 3 |
| 5 | ELECT HYDROGEN ENERGY | Address | 1 | 50% | 0% | 1 |
| 6 | GALLIUM ARSENIDE GERMANIUM ALLOY | Author keyword | 1 | 50% | 0% | 1 |
| 7 | MOSSBAUER INVESTIGATION | Author keyword | 1 | 50% | 0% | 1 |
| 8 | NON CONVENTIONAL SEGREGATION | Author keyword | 1 | 50% | 0% | 1 |
| 9 | SCI IND ASSOC SOLAR PHYS | Address | 1 | 50% | 0% | 1 |
| 10 | AMPHOTERIC DOPANT | Author keyword | 0 | 33% | 0% | 1 |
Web of Science journal categories |
Author Key Words |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
|---|---|---|---|---|---|---|---|
| 1 | HYDROGEN ACCUMULATION | 1 | 33% | 1% | 3 | Search HYDROGEN+ACCUMULATION | Search HYDROGEN+ACCUMULATION |
| 2 | GALLIUM ARSENIDE GERMANIUM ALLOY | 1 | 50% | 0% | 1 | Search GALLIUM+ARSENIDE+GERMANIUM+ALLOY | Search GALLIUM+ARSENIDE+GERMANIUM+ALLOY |
| 3 | MOSSBAUER INVESTIGATION | 1 | 50% | 0% | 1 | Search MOSSBAUER+INVESTIGATION | Search MOSSBAUER+INVESTIGATION |
| 4 | NON CONVENTIONAL SEGREGATION | 1 | 50% | 0% | 1 | Search NON+CONVENTIONAL+SEGREGATION | Search NON+CONVENTIONAL+SEGREGATION |
| 5 | AMPHOTERIC DOPANT | 0 | 33% | 0% | 1 | Search AMPHOTERIC+DOPANT | Search AMPHOTERIC+DOPANT |
| 6 | FE SEGREGATION | 0 | 33% | 0% | 1 | Search FE+SEGREGATION | Search FE+SEGREGATION |
| 7 | GROUP IV SEMICONDUCTORS | 0 | 18% | 1% | 2 | Search GROUP+IV+SEMICONDUCTORS | Search GROUP+IV+SEMICONDUCTORS |
| 8 | NICKEL CADMIUM | 0 | 15% | 1% | 2 | Search NICKEL+CADMIUM | Search NICKEL+CADMIUM |
| 9 | ORDERED STATE | 0 | 25% | 0% | 1 | Search ORDERED+STATE | Search ORDERED+STATE |
| 10 | DISORDERED STATE | 0 | 17% | 0% | 1 | Search DISORDERED+STATE | Search DISORDERED+STATE |
Key Words Plus |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | GAAS1 XGE2X | 22 | 68% | 9% | 19 |
| 2 | GASB1 XGE2X | 21 | 85% | 5% | 11 |
| 3 | GAAS1 XGE2X ALLOYS | 4 | 67% | 2% | 4 |
| 4 | METASTABLE INSB1 XBIX FILMS | 3 | 60% | 1% | 3 |
| 5 | SI3ALP | 2 | 50% | 1% | 3 |
| 6 | NICKEL CADMIUM ACCUMULATORS | 1 | 100% | 1% | 2 |
| 7 | SEMICONDUCTING GASB1 XGEX FILMS | 1 | 100% | 1% | 2 |
| 8 | TRISILYLPHOSPHINE | 1 | 50% | 0% | 1 |
| 9 | PULSED LASER CRYSTALLIZATION | 0 | 33% | 0% | 1 |
| 10 | INSB1 XBIX FILMS | 0 | 20% | 0% | 1 |
Journals |
Reviews |
| Title | Publ. year | Cit. | Active references |
% act. ref. to same field |
|---|---|---|---|---|
| Metallic materials for the hydrogen energy industry and main gas pipelines: complex physical problems of aging, embrittlement, and failure | 2008 | 8 | 16 | 56% |
| Characteristics of hydride-like segregates of hydrogen at dislocations in palladium | 2001 | 7 | 13 | 23% |
| EPITAXIAL CRYSTAL-GROWTH BY SPUTTER DEPOSITION - APPLICATIONS TO SEMICONDUCTORS .1. | 1983 | 42 | 45 | 36% |
| EPITAXIAL CRYSTAL-GROWTH BY SPUTTER DEPOSITION - APPLICATIONS TO SEMICONDUCTORS .2. | 1984 | 5 | 45 | 36% |
| PROPERTIES OF COATED AND MODIFIED SURFACES | 1985 | 2 | 36 | 36% |
| COMPUTER-AIDED MATERIALS DESIGN FOR SEMICONDUCTORS | 1993 | 0 | 70 | 14% |
Address terms |
| Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | NOVOSHAKHTINSK BRANCH | 4 | 67% | 1.9% | 4 |
| 2 | ELE OCHEM HYDROGEN ENERGY | 3 | 50% | 2.4% | 5 |
| 3 | IRON STEEL IND | 2 | 67% | 1.0% | 2 |
| 4 | ELECT HYDROGEN ENERGY | 1 | 50% | 0.5% | 1 |
| 5 | SCI IND ASSOC SOLAR PHYS | 1 | 50% | 0.5% | 1 |
| 6 | UR ES 73 11 | 0 | 33% | 0.5% | 1 |
| 7 | KURDJUMOV MET SCI PHYS | 0 | 25% | 0.5% | 1 |
| 8 | INVEST COMUNICACON OPT | 0 | 100% | 0.5% | 1 |
| 9 | KURDYUMOV MET SCI PHYS | 0 | 100% | 0.5% | 1 |
| 10 | OPT SOLIDES CNRS ERA 462 | 0 | 100% | 0.5% | 1 |
Related classes at same level (level 1) |
| Rank | Relatedness score | Related classes |
|---|---|---|
| 1 | 0.0000183530 | LATERAL CRYSTALLINE GROWTH//ACCELERATORS//ION INDUCED DEFECTS |
| 2 | 0.0000163481 | BULK AMORPHOUS SEMICONDUCTORS//PHASE TRANSITION WAVE//ALPHA A |
| 3 | 0.0000156705 | AVERAGE BOND ENERGY THEORY//PHYS IND PHYS//PH ECUBLENS PHYS PL |
| 4 | 0.0000092266 | GAASBI//BISMIDES//DILUTE BISMIDES |
| 5 | 0.0000087558 | SPIN 1 ISING BEG MODEL//FIZ ANABILIM DALI//CP 6030 |
| 6 | 0.0000087325 | MRJ//DISSOCIATION BARRIERS//MAT STUDIES MET |
| 7 | 0.0000081465 | AMORPHOUS III V SEMICONDUCTORS//GAAS1 XNX THIN FILMS//SUNAG |
| 8 | 0.0000080455 | GAP N//PICOSECOND TIMING RESOLUTION//SI H BOND DISSOCIATION |
| 9 | 0.0000064278 | ENERGY RESOLVED MASS SPECTROSCOPY//TRIODE ION PLATING//HOLLOW CATHODE ARC PLASMA |
| 10 | 0.0000060878 | SITE OCCUPATION PREFERENCES//ATOMIC LOCAL STRUCTURE//DAFNE L |