Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
26185 | 215 | 12.7 | 47% |
Classes in level above (level 2) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
1700 | 6150 | HETEROJUNCTION BIPOLAR TRANSISTORS//HETEROJUNCTION BIPOLAR TRANSISTORS HBTS//HETEROJUNCTION BIPOLAR TRANSISTOR HBT |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | HORIZONTAL CURRENT BIPOLAR TRANSISTOR HCBT | Author keyword | 6 | 100% | 2% | 4 |
2 | DYNAMIC THRESHOLD MOSFET DTMOS | Author keyword | 3 | 60% | 1% | 3 |
3 | LATERAL BIPOLAR TRANSISTOR | Author keyword | 2 | 36% | 2% | 4 |
4 | EXTRINSIC BASE | Author keyword | 1 | 38% | 1% | 3 |
5 | ABT BAUELEMENTETECHNOL | Address | 1 | 100% | 1% | 2 |
6 | BIPOLAR CHARGE PLASMA TRANSISTOR BCPT | Author keyword | 1 | 100% | 1% | 2 |
7 | BURIED SILICIDES | Author keyword | 1 | 100% | 1% | 2 |
8 | FULLY DEPLETED COLLECTOR | Author keyword | 1 | 100% | 1% | 2 |
9 | HIGH VOLTAGE BIPOLAR TRANSISTORS | Author keyword | 1 | 100% | 1% | 2 |
10 | MULTIPLE STEP IMPLANTATION | Author keyword | 1 | 100% | 1% | 2 |
Web of Science journal categories |
Author Key Words |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | DTMOS | 2 | 33% | 3% | 6 |
2 | LATERAL BIPOLAR TRANSISTORS | 2 | 67% | 1% | 2 |
3 | BIPOLAR ACTION | 2 | 50% | 1% | 3 |
4 | BIPOLAR TRANSISTOR HCBT | 1 | 100% | 1% | 2 |
5 | GATED BIPOLAR DEVICE | 1 | 100% | 1% | 2 |
6 | LATERAL BIPOLAR TRANSISTOR | 1 | 100% | 1% | 2 |
7 | DYNAMIC THRESHOLD | 1 | 40% | 1% | 2 |
8 | MOSFET STRUCTURE | 1 | 33% | 1% | 2 |
9 | CONTROLLED HYBRID TRANSISTOR | 1 | 50% | 0% | 1 |
10 | ENHANCED CURRENT GAIN | 1 | 50% | 0% | 1 |
Journals |
Reviews |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | ABT BAUELEMENTETECHNOL | 1 | 100% | 0.9% | 2 |
2 | ELECT COM ENGN | 1 | 50% | 0.5% | 1 |
3 | MICRODEVICES EQUIPMENT | 1 | 50% | 0.5% | 1 |
4 | SCG CZECH DESIGN | 1 | 50% | 0.5% | 1 |
5 | MICRO DEVICES EQUIPMENT | 1 | 22% | 0.9% | 2 |
6 | ADV DESIGN FRAMEWORK DEV | 0 | 25% | 0.5% | 1 |
7 | EMBEDDED MEMORY | 0 | 25% | 0.5% | 1 |
8 | DESIGN SYST TECHNOL | 0 | 100% | 0.5% | 1 |
9 | PRINTED ORGAN ELECT GRP | 0 | 100% | 0.5% | 1 |
10 | PROC DEVICE ANAL ENGN DEV | 0 | 100% | 0.5% | 1 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000185457 | PASSIVATED CONTACT//POLYSILICON EMITTER//CLOCK ACCESS TIME |
2 | 0.0000172375 | A AMA MICROELECT SCI TECHNOL//SIGEHBT//SIGE HBT |
3 | 0.0000136749 | DOUBLE GATE MOSFET//FINFET//SHORT CHANNEL EFFECTS |
4 | 0.0000135156 | TUNNELING FIELD EFFECT TRANSISTOR TFET//TUNNEL FIELD EFFECT TRANSISTOR TFET//TUNNEL FET TFET |
5 | 0.0000110020 | SPECIFIC ON RESISTANCE//BREAKDOWN VOLTAGE BV//LDMOS |
6 | 0.0000095227 | VOLTAGE REFERENCE//CMOS VOLTAGE REFERENCE//CURVATURE COMPENSATION |
7 | 0.0000088026 | CONDUCTING MOLECULE//PHYS QUANTUM ELECT//SINGLE MOLECULE DEVICE |
8 | 0.0000082104 | BEAM CHANNEL TRANSISTOR//IMPURITY ENHANCED OXIDATION//BIPOLAR MODE FIELD EFFECT TRANSISTORS BMFETS |
9 | 0.0000070210 | HOT CARRIER//CHANNEL INITIATED SECONDARY ELECTRON CHISEL//HOT CARRIER DEGRADATION |
10 | 0.0000057323 | LOG DOMAIN FILTERS//TRANSCONDUCTORS//CONTINUOUS TIME FILTERS |