Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
2596 | 2125 | 29.0 | 59% |
Classes in level above (level 2) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
1376 | 7700 | GALLIUM ARSENIDE//SULFUR PASSIVATION//INDIUM ARSENIDE |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | WEBSTER | Address | 4 | 26% | 1% | 12 |
2 | ADIABATIC BOND CHARGE MODEL | Author keyword | 3 | 57% | 0% | 4 |
3 | INAS110 | Author keyword | 2 | 67% | 0% | 2 |
4 | GASB110 | Author keyword | 1 | 100% | 0% | 2 |
5 | GAAS110 | Author keyword | 1 | 21% | 0% | 4 |
6 | BIDIMENSIONAL LAYERS | Author keyword | 1 | 50% | 0% | 1 |
7 | CIENCIAS CSIC CIENCIA MAT | Address | 1 | 50% | 0% | 1 |
8 | EXCITING VIBRATION FORCE | Author keyword | 1 | 50% | 0% | 1 |
9 | FUCHS KLIEWER PHONONS | Author keyword | 1 | 50% | 0% | 1 |
10 | GAAS110 SUBSTRATES | Author keyword | 1 | 50% | 0% | 1 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | ADIABATIC BOND CHARGE MODEL | 3 | 57% | 0% | 4 | Search ADIABATIC+BOND+CHARGE+MODEL | Search ADIABATIC+BOND+CHARGE+MODEL |
2 | INAS110 | 2 | 67% | 0% | 2 | Search INAS110 | Search INAS110 |
3 | GASB110 | 1 | 100% | 0% | 2 | Search GASB110 | Search GASB110 |
4 | GAAS110 | 1 | 21% | 0% | 4 | Search GAAS110 | Search GAAS110 |
5 | BIDIMENSIONAL LAYERS | 1 | 50% | 0% | 1 | Search BIDIMENSIONAL+LAYERS | Search BIDIMENSIONAL+LAYERS |
6 | EXCITING VIBRATION FORCE | 1 | 50% | 0% | 1 | Search EXCITING+VIBRATION+FORCE | Search EXCITING+VIBRATION+FORCE |
7 | FUCHS KLIEWER PHONONS | 1 | 50% | 0% | 1 | Search FUCHS+KLIEWER+PHONONS | Search FUCHS+KLIEWER+PHONONS |
8 | GAAS110 SUBSTRATES | 1 | 50% | 0% | 1 | Search GAAS110+SUBSTRATES | Search GAAS110+SUBSTRATES |
9 | III V110 | 1 | 50% | 0% | 1 | Search III+V110 | Search III+V110 |
10 | K CHAINS | 1 | 50% | 0% | 1 | Search K+CHAINS | Search K+CHAINS |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | SB OVERLAYERS | 166 | 94% | 3% | 60 |
2 | GAAS110 | 86 | 34% | 10% | 208 |
3 | 110 SURFACES | 81 | 49% | 6% | 121 |
4 | CS GAAS110 | 47 | 86% | 1% | 24 |
5 | SB GAAS110 | 44 | 88% | 1% | 21 |
6 | SCHOTTKY BARRIER FORMATION | 42 | 33% | 5% | 108 |
7 | FERMI LEVEL MOVEMENT | 39 | 80% | 1% | 24 |
8 | BI GAAS110 | 38 | 86% | 1% | 19 |
9 | INP110 | 28 | 45% | 2% | 47 |
10 | GAP110 | 23 | 60% | 1% | 25 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
Adsorption of group-V elements on III-V(110) surfaces | 1996 | 54 | 193 | 85% |
ALKALI ADSORPTION ON GAAS(110) - ATOMIC-STRUCTURE, ELECTRONIC STATES AND SURFACE DIPOLES | 1993 | 85 | 97 | 73% |
ON THE PHYSICS OF METAL-SEMICONDUCTOR INTERFACES | 1990 | 164 | 112 | 68% |
Hydrogen chemisorption on III-V semiconductor surfaces | 2003 | 17 | 88 | 57% |
METAL-SEMICONDUCTOR INTERFACES | 1994 | 48 | 73 | 55% |
TOTAL-ENERGY CALCULATIONS OF SEMICONDUCTOR SURFACE RECONSTRUCTIONS | 1992 | 154 | 382 | 23% |
Schottky barriers on GaAs: Screened pinning at defect levels | 1999 | 19 | 86 | 43% |
ANALYSIS OF BAND BENDING AT III-V-SEMICONDUCTOR INTERFACES BY RAMAN-SPECTROSCOPY | 1993 | 45 | 169 | 52% |
Theory of semiconductor surface reconstruction | 1997 | 79 | 208 | 16% |
ALKALI-ATOM ADSORPTION ON SEMICONDUCTOR SURFACES - METALLIZATION AND SCHOTTKY-BARRIER FORMATION | 1995 | 18 | 89 | 57% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | WEBSTER | 4 | 26% | 0.6% | 12 |
2 | CIENCIAS CSIC CIENCIA MAT | 1 | 50% | 0.0% | 1 |
3 | PHYS SEMICOND PHYS GRP | 1 | 50% | 0.0% | 1 |
4 | GRP FIS SUPERFICIES | 1 | 29% | 0.1% | 2 |
5 | FAN EDEBIYAT FAK | 0 | 33% | 0.0% | 1 |
6 | PHYS SOLIDE ENERGIE SOLAIRE | 0 | 33% | 0.0% | 1 |
7 | PHYS STOCKER RD | 0 | 33% | 0.0% | 1 |
8 | RD SEMICOND | 0 | 33% | 0.0% | 1 |
9 | SEKRETARIAT PN61 | 0 | 33% | 0.0% | 1 |
10 | ELE COMMUN ENGN | 0 | 25% | 0.0% | 1 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000220481 | AVERAGE BOND ENERGY THEORY//PHYS IND PHYS//PH ECUBLENS PHYS PL |
2 | 0.0000210108 | INDIUM PHOSPHIDE100//INTERACTION IONS MATTER//SIMULATION METHOD TRIM |
3 | 0.0000173720 | ELECTRON COUNTING MODEL//SUR E STUDY//GA ADATOM |
4 | 0.0000154380 | CEA SERV RECH SUR ES IRRADIAT MAT//CHIM ORGAN THEORIQUE//DISPLAY DEVICE CO |
5 | 0.0000153200 | ELECTROMAGNETIC GREENS FUNCTION//COUPLED PLASMON PHONON MODE//EDUC MACROMOLEC |
6 | 0.0000121307 | SI111 2X1//CROSS SECTIONAL STM//IV PHYS |
7 | 0.0000117973 | SULFUR PASSIVATION//PHOSPHIDIZATION//PHOSPHINE PLASMA |
8 | 0.0000113516 | HIGH RESOLUTION LOW ENERGY ELECTRON DIFFRACTION//GAAS GAP//SURFACE RESONANCES |
9 | 0.0000098936 | ATOMIC HYDROGEN CLEANING//ECR HYDROGEN PLASMA//IN SITU VACUUM PROCESS |
10 | 0.0000079772 | CHAIR QUANTUM RADIO PHYS//X RAY EXCITED CURRENT//SHERMAN FAIRCHILD SOLID STATE STUDIES |