Class information for: |
Basic class information |
| ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
|---|---|---|---|
| 25929 | 221 | 16.7 | 56% |
Classes in level above (level 2) |
| ID, lev. above |
Publications | Label for level above |
|---|---|---|
| 138 | 22619 | IEEE TRANSACTIONS ON ELECTRON DEVICES//IEEE ELECTRON DEVICE LETTERS//SOLID-STATE ELECTRONICS |
Terms with highest relevance score |
| Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|---|
| 1 | MOS TUNNELING DIODE | Author keyword | 6 | 100% | 2% | 4 |
| 2 | ELECTRON HOLE PLASMA RECOMBINATION | Author keyword | 3 | 100% | 1% | 3 |
| 3 | LATERAL NONUNIFORMITY LNU | Author keyword | 3 | 100% | 1% | 3 |
| 4 | METAL OXIDE SILICON DIODE | Author keyword | 1 | 100% | 1% | 2 |
| 5 | STRAINED SI TECHNOLOGY | Author keyword | 1 | 50% | 1% | 2 |
| 6 | DEEP DEPLETION | Author keyword | 1 | 23% | 2% | 5 |
| 7 | METAL OXIDE SEMICONDUCTOR MOS | Author keyword | 1 | 13% | 4% | 8 |
| 8 | SCHOTTKY BARRIER HEIGHT MODULATION | Author keyword | 1 | 40% | 1% | 2 |
| 9 | CHARACTERISAT NANOELECT STRUCT | Address | 1 | 50% | 0% | 1 |
| 10 | CHARACTERIZAT NANOELECT STRUCT | Address | 1 | 50% | 0% | 1 |
Web of Science journal categories |
Author Key Words |
Key Words Plus |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | DEEP DEPLETION | 12 | 86% | 3% | 6 |
| 2 | SELECTIVE ANODIC OXIDATION | 2 | 67% | 1% | 2 |
| 3 | DIELECTRIC RELIABILITY | 1 | 50% | 1% | 2 |
| 4 | DIOXIDE SIO2 | 1 | 100% | 1% | 2 |
| 5 | GATE DIELECTRIC CAPACITOR | 1 | 100% | 1% | 2 |
| 6 | LATERAL NONUNIFORMITY | 1 | 100% | 1% | 2 |
| 7 | MOS TUNNELING DIODES | 1 | 100% | 1% | 2 |
| 8 | SILICON TUNNELING DIODES | 1 | 27% | 1% | 3 |
| 9 | PHOTOINJECTION | 1 | 16% | 2% | 5 |
| 10 | MIS PHOTODETECTORS | 1 | 50% | 0% | 1 |
Journals |
Reviews |
| Title | Publ. year | Cit. | Active references |
% act. ref. to same field |
|---|---|---|---|---|
| Metal-Insulator-Semiconductor Photodetectors | 2010 | 32 | 58 | 19% |
| The future of construction materials research and the seventh UN Millennium Development Goal: A few insights | 2013 | 6 | 47 | 4% |
Address terms |
| Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | CHARACTERISAT NANOELECT STRUCT | 1 | 50% | 0.5% | 1 |
| 2 | CHARACTERIZAT NANOELECT STRUCT | 1 | 50% | 0.5% | 1 |
| 3 | MODULE TECHNOL | 0 | 33% | 0.5% | 1 |
| 4 | 521 | 0 | 13% | 0.5% | 1 |
| 5 | INFORMAT RADIOELECT EDUC | 0 | 100% | 0.5% | 1 |
| 6 | STRENGTH FRACTURE MAT STRUCT | 0 | 100% | 0.5% | 1 |
Related classes at same level (level 1) |
| Rank | Relatedness score | Related classes |
|---|---|---|
| 1 | 0.0000234273 | SID4//DEUTERIUM D ANNEALING//TRAP CREATION |
| 2 | 0.0000183314 | DIRECT TUNNELING//QUANTUM MECHANICAL EFFECTS QMES//WAVE FUNCTION PENETRATION |
| 3 | 0.0000136028 | LIQUID PHASE DEPOSITION//LIQUID PHASE CRYSTAL DEPOSITION//MITTEMEIJER |
| 4 | 0.0000131748 | CARL EMILY FUCHS MICROELECT//CEFIM//EUROPEAN QUAL |
| 5 | 0.0000095101 | STRESS INDUCED LEAKAGE CURRENT//SOFT BREAKDOWN//DIELECTRIC BREAKDOWN BD |
| 6 | 0.0000092755 | SIDEWALL OXIDATION//COMPUTAT ELECT//MEMORY DEVICE BUSINESS |
| 7 | 0.0000080048 | HFO2//HIGH K//METAL GATE |
| 8 | 0.0000077823 | GESN//L NESS//GERMANIUM TIN |
| 9 | 0.0000077032 | INTERFACIAL SILICON EMISSION//SILICON OXIDATION//LOW TEMPERATURE SILICON OXIDATION |
| 10 | 0.0000073010 | IRRADIATED P N JUNCTION LEAKAGE//JUNCTION SHAPE//P N JUNCTION LEAKAGE |