Class information for:
Level 1: JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY//LINE EDGE ROUGHNESS//CHEMICALLY AMPLIFIED RESISTS

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
2544 2142 21.8 64%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
740 11887 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B//MICROELECTRONIC ENGINEERING//JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY Journal 47 16% 13% 278
2 LINE EDGE ROUGHNESS Author keyword 43 31% 5% 114
3 CHEMICALLY AMPLIFIED RESISTS Author keyword 38 24% 6% 135
4 NEW TECHNOL DEV SECT Address 20 100% 0% 9
5 PHOTORESISTS Author keyword 18 24% 3% 65
6 CHEMICAL AMPLIFICATION Author keyword 16 29% 2% 46
7 MOLECULAR RESISTS Author keyword 15 82% 0% 9
8 POLYMER CHEM NANOTECHNOL Address 14 100% 0% 7
9 PHOTOACID GENERATOR Author keyword 13 24% 2% 48
10 DISSOLUTION INHIBITOR Author keyword 13 53% 1% 17

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class		 LCSH search Wikipedia search
1 LINE EDGE ROUGHNESS 43 31% 5% 114 Search LINE+EDGE+ROUGHNESS Search LINE+EDGE+ROUGHNESS
2 CHEMICALLY AMPLIFIED RESISTS 38 24% 6% 135 Search CHEMICALLY+AMPLIFIED+RESISTS Search CHEMICALLY+AMPLIFIED+RESISTS
3 PHOTORESISTS 18 24% 3% 65 Search PHOTORESISTS Search PHOTORESISTS
4 CHEMICAL AMPLIFICATION 16 29% 2% 46 Search CHEMICAL+AMPLIFICATION Search CHEMICAL+AMPLIFICATION
5 MOLECULAR RESISTS 15 82% 0% 9 Search MOLECULAR+RESISTS Search MOLECULAR+RESISTS
6 PHOTOACID GENERATOR 13 24% 2% 48 Search PHOTOACID+GENERATOR Search PHOTOACID+GENERATOR
7 DISSOLUTION INHIBITOR 13 53% 1% 17 Search DISSOLUTION+INHIBITOR Search DISSOLUTION+INHIBITOR
8 RESIST 11 14% 3% 69 Search RESIST Search RESIST
9 LINEWIDTH ROUGHNESS 9 41% 1% 17 Search LINEWIDTH+ROUGHNESS Search LINEWIDTH+ROUGHNESS
10 ACID CATALYZED DEPROTECTION 9 83% 0% 5 Search ACID+CATALYZED+DEPROTECTION Search ACID+CATALYZED+DEPROTECTION

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 LINE EDGE ROUGHNESS 105 41% 9% 196
2 CHEMICALLY AMPLIFIED RESISTS 103 45% 8% 175
3 ACID GENERATION EFFICIENCY 86 80% 2% 53
4 AMPLIFICATION RESISTS 82 92% 2% 33
5 POST OPTICAL LITHOGRAPHY 80 90% 2% 35
6 SUBPICOSECOND PULSE RADIOLYSIS 80 90% 2% 35
7 ACID DIFFUSION 43 55% 2% 53
8 PHOTORESISTS 41 32% 5% 107
9 MICROSCOPIC REGION 29 73% 1% 22
10 POSITIVE TONE 27 54% 2% 35

Journals


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY 47 16% 13% 278

Reviews


Title Publ. year Cit. Active references % act. ref.
to same field
Chemical amplification resists for microlithography 2005 299 223 52%
Resist Materials and Processes for Extreme Ultraviolet Lithography 2013 8 74 91%
Radiation Chemistry in Chemically Amplified Resists 2010 37 168 66%
CHEMICAL AMPLIFICATION IN HIGH-RESOLUTION IMAGING-SYSTEMS 1994 150 35 80%
Lithographic imaging techniques for the formation of nanoscopic features 1999 361 52 37%
Plasma-polymer interactions: A review of progress in understanding polymer resist mask durability during plasma etching for nanoscale fabrication 2011 58 239 29%
A Comprehensive Review of EUV Resist Materials and Pro cessing at Selete 2011 12 12 100%
CHEMICAL AMPLIFICATION MECHANISMS FOR MICROLITHOGRAPHY 1991 199 38 66%
Characterization and lithographic application of calix[4]resorcinarene derivatives 2008 22 51 73%
Recent progress in high resolution lithography 2006 116 60 33%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 NEW TECHNOL DEV SECT 20 100% 0.4% 9
2 POLYMER CHEM NANOTECHNOL 14 100% 0.3% 7
3 ADV MAT DEV 1 10 61% 0.5% 11
4 MICROELECT MAT DEV S 6 100% 0.2% 4
5 TECHNOL ELECT MAT 4 67% 0.2% 4
6 FINE ELECT S 4 30% 0.5% 11
7 EUVL 3 50% 0.2% 5
8 POLYMER NANOTECHNOL 3 32% 0.4% 8
9 CAMERON PL 3 45% 0.2% 5
10 XRAY LITHOG 3 30% 0.4% 8

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000246849 PHOTOBASE GENERATOR//BASE AMPLIFIER//BASE PROLIFERATION REACTION
2 0.0000236045 HYDROGEN SILSESQUIOXANE//HSQ//HSQ RESIST
3 0.0000167242 VUV LITHOG//IMMERSION LITHOGRAPHY//LEAF ARRANGEMENT ANALYSIS
4 0.0000153770 BILEVEL STRUCTURE//PLASMA BLANKING//WT ADDITIVITY
5 0.0000118661 PHOTOMASK//IC EQUIPMENT//PROXIMITY EFFECT CORRECTION
6 0.0000110566 PHOTOSENSITIVE POLYIMIDE//REACTION DEVELOPMENT PATTERNING RDP//PHOTOSENSITIVE POLYBENZOXAZOLE
7 0.0000083974 157 NM LASER//SUR E ENGN OPTOELECT F4//HYBRIDIZATION REACTION
8 0.0000083188 OPTICAL LITHOGRAPHY//PHASE SHIFTING MASK//BOTTOM ANTIREFLECTIVE COATINGS
9 0.0000071243 NANOSYST MFG//NANOELECT PROC IL//ION PROJECTION
10 0.0000062302 NANOPYRAMID ARRAY//DOPANT ION IMPLANTATION//FIS SUPERFICIES INTER ES